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LM5108DRCR
IC GATE DRVR PWR MGMT
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- 製造商。 部分 #LM5108DRCR
- 包 VSON (DRC)-10
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規格
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| DrivenConfiguration | Half-Bridge |
| ChannelType | Independent |
| NumberofDrivers | 2 |
| GateType | N-Channel MOSFET |
| Voltage-Supply | 5.5V ~ 16V |
| Current-PeakOutput(SourceSink) | 1.6A, 2.6A |
| InputType | CMOS/TTL |
| Rise/FallTime(Typ) | 11ns, 8ns |
| OperatingTemperature | -40°C ~ 125°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 10-VFDFN Exposed Pad |
概述
Description
The LM5108DRCR is a high-performance, half-bridge gate driver from Texas Instruments. It is designed to drive both the high-side and low-side N-channel MOSFETs in a synchronous buck or half-bridge power converter. This driver is particularly suited for applications requiring high-speed operation due to its fast switching capability and low propagation delay.
Key features of the LM5108DRCR include a wide input voltage range, robust gate drive outputs, and built-in protection features like under-voltage lockout (UVLO). It also provides a bootstrap diode for the high-side driver, simplifying circuit design and enhancing reliability. The device supports input voltages up to 100V, making it versatile for various power supply applications.
Its small footprint, typically in a VSON package, and efficient thermal performance make it ideal for compact and high-density power designs. The LM5108DRCR is commonly used in DC-DC converters, motor drives, and other power management applications where efficient and reliable MOSFET driving is essential.
Key features of the LM5108DRCR include a wide input voltage range, robust gate drive outputs, and built-in protection features like under-voltage lockout (UVLO). It also provides a bootstrap diode for the high-side driver, simplifying circuit design and enhancing reliability. The device supports input voltages up to 100V, making it versatile for various power supply applications.
Its small footprint, typically in a VSON package, and efficient thermal performance make it ideal for compact and high-density power designs. The LM5108DRCR is commonly used in DC-DC converters, motor drives, and other power management applications where efficient and reliable MOSFET driving is essential.
Features
The LM5108DRCR is a high-performance half-bridge gate driver designed for driving N-channel MOSFETs. Key features include:
1. Operating Voltage: It supports a wide input voltage range from 4.5V to 18V, making it suitable for various applications.
2. High-Side and Low-Side Drivers: The device provides independently controlled high-side and low-side drivers, allowing efficient switching of power MOSFETs in half-bridge configurations.
3. Bootstrap Diode: It includes an integrated bootstrap diode, simplifying the design and reducing external component count.
4. Drive Capability: The LM5108DRCR offers strong drive capability, with a peak source current of 2.3A and a peak sink current of 3.5A, ensuring fast switching of the MOSFETs.
5. Protection Features: It incorporates protection features such as undervoltage lockout (UVLO) for both high-side and low-side drivers, ensuring robust operation under various conditions.
6. Thermal Performance: The device is available in a thermally enhanced package, supporting better heat dissipation.
7. Package: It comes in a small, space-saving VSON package, suitable for compact designs.
These features make the LM5108DRCR ideal for applications such as motor drives, power supplies, and inverter designs.
1. Operating Voltage: It supports a wide input voltage range from 4.5V to 18V, making it suitable for various applications.
2. High-Side and Low-Side Drivers: The device provides independently controlled high-side and low-side drivers, allowing efficient switching of power MOSFETs in half-bridge configurations.
3. Bootstrap Diode: It includes an integrated bootstrap diode, simplifying the design and reducing external component count.
4. Drive Capability: The LM5108DRCR offers strong drive capability, with a peak source current of 2.3A and a peak sink current of 3.5A, ensuring fast switching of the MOSFETs.
5. Protection Features: It incorporates protection features such as undervoltage lockout (UVLO) for both high-side and low-side drivers, ensuring robust operation under various conditions.
6. Thermal Performance: The device is available in a thermally enhanced package, supporting better heat dissipation.
7. Package: It comes in a small, space-saving VSON package, suitable for compact designs.
These features make the LM5108DRCR ideal for applications such as motor drives, power supplies, and inverter designs.
Package
The LM5108DRCR is typically housed in a VSON (Very Thin Small Outline No-lead) package, specifically a 10-pin VSON, identified by the suffix "DRC" in its part number. This package type is designed for a compact footprint and efficient heat dissipation in electronic circuit applications.
Pinout
The LM5108DRCR is a high-voltage gate driver IC designed for driving N-channel MOSFETs in a half-bridge configuration. It comes in a 10-pin VSON (DRC) package. The pin functions are as follows:
1. HB: High-side bootstrap supply voltage.
2. HO: High-side gate drive output.
3. HS: High-side source connection for the high-side MOSFET.
4. HI: High-side control input.
5. VDD: Supply voltage for the low-side circuitry.
6. LI: Low-side control input.
7. LO: Low-side gate drive output.
8. VSS: Ground reference.
9. NC: No connection (typically not internally connected; may be used for mechanical stability).
10. NC: No connection.
The LM5108DRCR is optimized for high-speed switching applications and provides high peak current drive capability, thus ensuring efficient operation in high-frequency circuits.
1. HB: High-side bootstrap supply voltage.
2. HO: High-side gate drive output.
3. HS: High-side source connection for the high-side MOSFET.
4. HI: High-side control input.
5. VDD: Supply voltage for the low-side circuitry.
6. LI: Low-side control input.
7. LO: Low-side gate drive output.
8. VSS: Ground reference.
9. NC: No connection (typically not internally connected; may be used for mechanical stability).
10. NC: No connection.
The LM5108DRCR is optimized for high-speed switching applications and provides high peak current drive capability, thus ensuring efficient operation in high-frequency circuits.
Manufacturer
The LM5108DRCR is manufactured by Texas Instruments, a global semiconductor company. Texas Instruments specializes in designing and manufacturing a wide range of semiconductor technologies, including analog chips and embedded processors, which are fundamental components in electronics. The company serves industries such as automotive, industrial, personal electronics, communications equipment, and enterprise systems. Texas Instruments is known for its innovation in semiconductor design and its strong emphasis on research and development, making it a key player in the tech industry.
Application
The LM5108DRCR is a high-voltage half-bridge gate driver used in various applications. These include motor drives, power supply units, DC-DC converters, and industrial equipment. It is particularly useful in applications requiring efficient switching of MOSFETs or IGBTs, such as inverters, synchronous rectifiers, and Class D amplifiers. Its robust design allows it to manage high-speed operations in environments with significant voltage fluctuations.
Equivalent
The LM5108DRCR is a high-voltage gate driver from Texas Instruments. Equivalent products include:
1. IR2110 from Infineon Technologies
2. IRS2183 from Infineon Technologies
3. FAN7390 from ON Semiconductor
4. ADuM4223 from Analog Devices
5. UCC27714 from Texas Instruments
These alternatives vary in specifications; check datasheets for compatibility.
1. IR2110 from Infineon Technologies
2. IRS2183 from Infineon Technologies
3. FAN7390 from ON Semiconductor
4. ADuM4223 from Analog Devices
5. UCC27714 from Texas Instruments
These alternatives vary in specifications; check datasheets for compatibility.
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