LM5106SD

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LM5106SD

IC GATE DRVR HALF-BRIDGE 10WSON

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規格

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Obsolete
DrivenConfiguration Half-Bridge
ChannelType Synchronous
NumberofDrivers 2
GateType N-Channel MOSFET
Voltage-Supply 8V ~ 14V
LogicVoltage-VILVIH 0.8V, 2.2V
Current-PeakOutput(SourceSink) 1.2A, 1.8A
InputType Non-Inverting
HighSideVoltage-Max(Bootstrap) 118 V
Rise/FallTime(Typ) 15ns, 10ns
OperatingTemperature -40°C ~ 125°C (TJ)
MountingType Surface Mount
Package/Case 10-WDFN Exposed Pad

概述

Description

"Introduction to LM5106SD" likely refers to an introductory overview of the LM5106SD, which is a part of Texas Instruments' line of integrated circuits. The LM5106SD is a high-voltage gate driver designed to drive N-channel MOSFETs in a half-bridge configuration, which is common in power management and conversion applications. Key features include a bootstrap diode, high speed capability, and a robust gate drive with low propagation delay.
The device operates over a wide voltage range and is designed for high efficiency, enabling it to drive loads with minimal power loss. The LM5106SD is equipped with under-voltage lockout (UVLO) for safety and reliability, ensuring the MOSFETs are not driven when the supply voltage is below a certain threshold. Its compact packaging and high integration level make it ideal for use in applications like motor drives, power supplies, and DC-DC converters.
Understanding its datasheet and application notes is crucial for effective integration into electronic designs, ensuring optimal performance and preventing circuit malfunction.

Features

The LM5106SD is a high-performance half-bridge gate driver designed for use in DC-DC converters, motor drivers, and other power management applications. Key features include:
1. Input Supply Voltage Range: It supports a wide input supply voltage range, typically from 9V to 14V, making it versatile for various applications.
2. Output: The device provides separate high-side and low-side gate drive outputs, allowing for efficient driving of N-channel MOSFETs.
3. Bootstrap Diode: The LM5106SD includes an integrated bootstrap diode, which simplifies the design and reduces external component count.
4. Low Propagation Delay: It features low propagation delay, ensuring fast switching times and improved system performance.
5. Undervoltage Lockout (UVLO): The driver incorporates undervoltage lockout protection for both high and low-side drivers, enhancing system reliability by preventing faulty operations.
6. Level Shifting: It includes level-shifting capability to accommodate different logic levels between the input and output.
7. Thermal Protection: The device is equipped with thermal protection to prevent overheating under thermal stress conditions.
8. Surface-Mount Package: The LM5106SD is available in a small surface-mount package, making it suitable for space-constrained designs.
These features make the LM5106SD a robust and efficient solution for driving MOSFETs in various high-frequency power management applications.

Package

The LM5106SD is a half-bridge gate driver integrated circuit from Texas Instruments. It comes in a WSON (Wettable Flank Small Outline No-lead) package type, specifically the DRC package, which has 10 pins. This type of package is known for its compact size and improved thermal performance.

Pinout

The LM5106SD is a high-voltage gate driver integrated circuit designed for driving N-channel MOSFETs in a half-bridge configuration. It comes in a 10-pin WSON (DSD) package. Below is a concise description of its pin count and functions:
1. HB (High-Side Bootstrap Voltage): Provides the bootstrap voltage to the high-side driver.
2. HO (High-Side Output): Connects to the gate of the high-side MOSFET.
3. HS (High-Side Source): Connects to the source of the high-side MOSFET and the bootstrap capacitor return path.
4. HI (High-Side Input): Input signal for controlling the high-side driver.
5. VDD (Supply Voltage): Powers the low-side driver and logic circuits.
6. LI (Low-Side Input): Input signal for controlling the low-side driver.
7. LO (Low-Side Output): Connects to the gate of the low-side MOSFET.
8. VSS (Ground): Ground reference for the IC.
9. NC (No Connect): Not internally connected; may be used for mechanical support or thermal dissipation.
10. HS (High-Side Source): Connects to the source of the high-side MOSFET, typically the midpoint of the half-bridge.
The LM5106SD is used in applications requiring efficient and reliable MOSFET driving, such as DC-DC converters and motor drivers.

Manufacturer

The LM5106SD is manufactured by Texas Instruments, a global semiconductor company. Texas Instruments is known for its development and supply of analog and embedded processing chips. The company designs and manufactures semiconductors that are used in a wide range of electronic applications, including industrial, automotive, personal electronics, and communications equipment.

Application

The LM5106SD is a high-performance half-bridge gate driver designed for driving high-speed power MOSFETs and IGBTs. Its application areas include switch-mode power supplies, motor drivers, DC-DC converters, and power inverters. It is particularly useful in applications requiring efficient power conversion and management, such as renewable energy systems, automotive power systems, and industrial motor control. The LM5106SD supports high-speed switching with low propagation delays, making it suitable for applications needing precise timing and fast response.

Equivalent

The LM5106SD is a high-voltage gate driver manufactured by Texas Instruments. Equivalent products would include gate drivers with similar specifications from other manufacturers, such as the MIC4103 from Microchip Technology, the IR2113 from Infineon Technologies, and the FAN7392 from ON Semiconductor. When selecting an equivalent, ensure that it matches the electrical characteristics, package type, and temperature range required for your application.

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