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L6387ED013TR
IC GATE DRVR HALF-BRIDGE 8SO
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- 製造商。 部分 #L6387ED013TR
- 包 8-SOIC
- 資料表 L6387ED013TR DataSheet
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規格
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| DrivenConfiguration | Half-Bridge |
| ChannelType | Independent |
| NumberofDrivers | 2 |
| GateType | IGBT, N-Channel MOSFET |
| Voltage-Supply | 17V (Max) |
| LogicVoltage-VILVIH | 1.5V, 3.6V |
| Current-PeakOutput(SourceSink) | 400mA, 650mA |
| InputType | Inverting |
| HighSideVoltage-Max(Bootstrap) | 600 V |
| Rise/FallTime(Typ) | 50ns, 30ns |
| OperatingTemperature | -45°C ~ 125°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
概述
Description
The L6387ED013TR is a high-voltage gate driver integrated circuit (IC) designed for power electronics applications. It is typically used to drive power MOSFETs or IGBTs, facilitating efficient power conversion in various systems. The device integrates a high-voltage half-bridge driver capable of operating at high frequencies, making it suitable for use in motor control, lighting, and power supply applications.
Key features of the L6387ED013TR include its ability to operate with supply voltages up to 600V, built-in dead-time control to prevent shoot-through, and under-voltage lockout to protect against insufficient supply voltage levels. It also includes logic level inputs, which simplify interfacing with microcontrollers or digital signal processors.
The IC is designed to enhance power efficiency and reliability in electronic systems by providing strong drive capability and robust protection features. Its compact packaging and integrated design help reduce the overall size and component count in a circuit, making it an attractive choice for designers aiming to optimize performance and space in their applications.
Key features of the L6387ED013TR include its ability to operate with supply voltages up to 600V, built-in dead-time control to prevent shoot-through, and under-voltage lockout to protect against insufficient supply voltage levels. It also includes logic level inputs, which simplify interfacing with microcontrollers or digital signal processors.
The IC is designed to enhance power efficiency and reliability in electronic systems by providing strong drive capability and robust protection features. Its compact packaging and integrated design help reduce the overall size and component count in a circuit, making it an attractive choice for designers aiming to optimize performance and space in their applications.
Features
The L6387ED013TR is a high-voltage gate driver IC designed for half-bridge configurations, commonly used to drive MOSFETs and IGBTs. Key features include:
1. High Voltage: Can handle up to 600V, making it suitable for high-voltage applications.
2. High-Side and Low-Side Driver: Integrated drivers for both high-side and low-side switches.
3. Bootstrap Operation: Supports bootstrap circuitry for high-side driver operation.
4. Under-Voltage Lockout (UVLO): Ensures safe operation by preventing faulty gate driving when supply voltage is too low.
5. Interlocking Function: Prevents both high-side and low-side transistors from being on simultaneously, protecting the circuit.
6. Adjustable Dead Time: Allows optimization of dead time between switching to reduce power loss.
7. Shoot-Through Protection: Protects against simultaneous conduction of high-side and low-side switches.
8. Thermal Shutdown: Protects the IC from overheating, enhancing reliability.
9. Compact Package: Available in a surface-mount package for efficient PCB design.
This IC is ideal for motor drives, power supplies, and other applications requiring robust and efficient high-voltage gate driving.
1. High Voltage: Can handle up to 600V, making it suitable for high-voltage applications.
2. High-Side and Low-Side Driver: Integrated drivers for both high-side and low-side switches.
3. Bootstrap Operation: Supports bootstrap circuitry for high-side driver operation.
4. Under-Voltage Lockout (UVLO): Ensures safe operation by preventing faulty gate driving when supply voltage is too low.
5. Interlocking Function: Prevents both high-side and low-side transistors from being on simultaneously, protecting the circuit.
6. Adjustable Dead Time: Allows optimization of dead time between switching to reduce power loss.
7. Shoot-Through Protection: Protects against simultaneous conduction of high-side and low-side switches.
8. Thermal Shutdown: Protects the IC from overheating, enhancing reliability.
9. Compact Package: Available in a surface-mount package for efficient PCB design.
This IC is ideal for motor drives, power supplies, and other applications requiring robust and efficient high-voltage gate driving.
Package
The L6387ED013TR is an electronic component with a package type known as SO-8 (Small Outline with 8 pins). This package is commonly used for surface-mount technology applications.
Pinout
The L6387ED013TR is a high-voltage gate driver IC from STMicroelectronics, typically used to drive power MOSFETs or IGBTs in half-bridge configurations. This IC is designed to handle high-speed applications and is often used in motor control and power conversion applications.
The L6387ED comes in a SOIC-8 package, which means it has 8 pins. The functions of these pins typically include:
1. VCC: Supply voltage for the logic circuit.
2. GND: Ground reference.
3. IN: Logic input for controlling the output.
4. VBOOT: Bootstrap supply voltage for the high-side driver.
5. VS: High-side driver return.
6. HO: High-side gate driver output.
7. LO: Low-side gate driver output.
8. COM: Common ground reference for the low-side driver.
These pins are used to provide the necessary signals and power connections for driving the high and low-side transistors efficiently. The IC is designed for robustness and efficiency in high-power applications.
The L6387ED comes in a SOIC-8 package, which means it has 8 pins. The functions of these pins typically include:
1. VCC: Supply voltage for the logic circuit.
2. GND: Ground reference.
3. IN: Logic input for controlling the output.
4. VBOOT: Bootstrap supply voltage for the high-side driver.
5. VS: High-side driver return.
6. HO: High-side gate driver output.
7. LO: Low-side gate driver output.
8. COM: Common ground reference for the low-side driver.
These pins are used to provide the necessary signals and power connections for driving the high and low-side transistors efficiently. The IC is designed for robustness and efficiency in high-power applications.
Manufacturer
The L6387ED013TR is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is known for designing and manufacturing a wide range of semiconductor products, including integrated circuits and discrete devices. The company serves various markets such as automotive, industrial, personal electronics, and communications equipment. STMicroelectronics is recognized for its innovation and extensive portfolio that supports applications in power management, analog, digital, and mixed-signal devices.
Application
The L6387ED013TR is a high-voltage gate driver IC designed for applications involving power conversion and motor control. It is commonly used in half-bridge and full-bridge configurations for driving MOSFETs or IGBTs in a wide range of applications including switch-mode power supplies, industrial inverters, motor drives, and other power management systems. Its ability to handle high voltages makes it suitable for use in industrial automation, renewable energy systems like solar inverters, and automotive electronics.
Equivalent
The L6387ED013TR is a high-voltage high and low-side driver from STMicroelectronics. Equivalent products can include similar half-bridge gate drivers from manufacturers such as Infineon, Texas Instruments, and ON Semiconductor. Examples are IR2110 from Infineon, UCC27714 from Texas Instruments, and FAN7382 from ON Semiconductor. These alternatives should be evaluated for compatibility with specific design requirements.
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