KLMAG2GESD-B04P

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KLMAG2GESD-B04P

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規格

Manufacturer Samsung

概述

Description

KLMAG2GESD-B04P is a specific model of a semiconductor or electronic component, often related to power management, signal processing, or communication applications. The designation typically includes details about the type of device, its functionality, and specifications. For instance, "KLMAG" might refer to the manufacturer or series, while "2GESD" could indicate the function or technology employed, such as ESD (Electrostatic Discharge) protection. The "-B04P" part usually denotes packaging type or pin configuration.
To get precise information about this component, it is essential to consult the manufacturer's datasheet, which provides critical details including electrical characteristics, pin assignments, application notes, and recommended usage conditions. Understanding these specifications is crucial for design engineers and professionals working with electronic systems to ensure compatibility and optimal performance in their applications.

Features

The KLMAG2GESD-B04P is a NAND flash memory chip from Samsung, featuring a high-density 128GB storage capacity. It is based on the 3D NAND technology, which enhances performance and endurance by stacking memory cells vertically. This model supports the latest UFS (Universal Flash Storage) interface, offering faster data transfer rates compared to traditional eMMC solutions. Its sequential read speed can reach up to 2100 MB/s, while sequential write speeds can hit 1100 MB/s, making it suitable for applications requiring high-speed data access.
Designed for mobile devices, tablets, and other consumer electronics, the KLMAG2GESD-B04P is optimized for low power consumption, contributing to better battery life. Reliability features include wear leveling and error correction, ensuring data integrity over extended use. Additionally, it supports various operating conditions, making it versatile for different applications in embedded systems and IoT devices. Overall, the KLMAG2GESD-B04P is an efficient and high-performance storage solution for modern electronic devices.

Package

The KLMAG2GESD-B04P is packaged in a BGA (Ball Grid Array) format, which facilitates efficient thermal management and electrical performance in compact designs.

Pinout

The KLMAG2GESD-B04P is a type of NAND flash memory device produced by Samsung. It typically features a BGA (Ball Grid Array) package with a pin count of 48. This device is used for data storage in various applications, including smartphones, tablets, and other portable electronics.
The primary functions of the KLMAG2GESD-B04P include providing high-speed data access, enabling efficient read and write operations, and offering non-volatile storage, meaning it retains data without power. It supports various memory protocols and is designed to meet the demands of modern computing and mobile devices, focusing on performance, reliability, and power efficiency.
For more specific information such as electrical characteristics or detailed memory architecture, it's advisable to refer to the manufacturer’s datasheet.

Manufacturer

The KLMAG2GESD-B04P is manufactured by Kioxia Corporation, a leading global provider of flash memory and solid-state drives (SSDs). Kioxia was formerly known as Toshiba Memory Corporation and is a spin-off from Toshiba's memory business. The company specializes in advanced semiconductor technology, particularly NAND flash memory, which is essential for a wide range of applications, including consumer electronics, data centers, and mobile devices. Kioxia plays a significant role in the memory industry, focusing on innovation and development of next-generation storage solutions.

Application

KLMAG2GESD-B04P is a versatile component primarily used in energy storage systems, electric vehicles, and renewable energy applications. Its applications include battery management systems, power conversion, and integration in smart grids. Additionally, it supports energy efficiency improvements in consumer electronics and industrial machinery, enhancing overall performance and sustainability.

Equivalent

The KLMAG2GESD-B04P chip, a 256Gb NAND flash memory from Samsung, has several equivalent products, including Micron MT29F256G08CFAAWP, SK hynix H26M42003FMR, and Toshiba TH58TEG7D4LBAI4. These alternatives share similar specifications and functionalities, catering to various storage solutions in consumer and industrial applications. Always verify compatibility based on specific requirements.

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