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KLM8G1WEPD-B031
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規格
| Manufacturer | Samsung |
| Package | BGA-153 |
概述
Description
KLM8G1WEPD-B031 is a specific model of DRAM memory chip produced by Nanya Technology Corporation. It is part of the KLM series, which typically includes various types of NAND flash memory and DRAM products designed for high-performance applications in consumer electronics, computing, and networking devices.
This particular model features a density of 8 gigabits and is commonly used in mobile devices, such as smartphones and tablets, due to its low power consumption and efficient performance. The chip operates on specific data rates and voltage levels that cater to the needs of modern applications, ensuring fast data transfer and reliability.
Overall, KLM8G1WEPD-B031 is an integral component for manufacturers looking to enhance device performance while maintaining energy efficiency.
This particular model features a density of 8 gigabits and is commonly used in mobile devices, such as smartphones and tablets, due to its low power consumption and efficient performance. The chip operates on specific data rates and voltage levels that cater to the needs of modern applications, ensuring fast data transfer and reliability.
Overall, KLM8G1WEPD-B031 is an integral component for manufacturers looking to enhance device performance while maintaining energy efficiency.
Features
The KLM8G1WEPD-B031 is a NAND flash memory chip with the following key features:
1. Capacity: 8GB storage capacity.
2. Form Factor: Typically available in a BGA (Ball Grid Array) package for compact integration.
3. NAND Type: It uses MLC (Multi-Level Cell) technology, allowing for higher data storage density.
4. Read/Write Speed: Offers decent read and write speeds suitable for a variety of applications.
5. Endurance: Designed to withstand a significant number of program/erase cycles, enhancing durability.
6. Power Efficiency: Operates efficiently, making it suitable for battery-powered devices.
7. Interface: Utilizes standard NAND flash interface protocols for compatibility with various controllers.
8. Application Use: Commonly used in consumer electronics, mobile devices, and embedded systems.
This chip is ideal for applications requiring reliable and efficient bulk storage.
1. Capacity: 8GB storage capacity.
2. Form Factor: Typically available in a BGA (Ball Grid Array) package for compact integration.
3. NAND Type: It uses MLC (Multi-Level Cell) technology, allowing for higher data storage density.
4. Read/Write Speed: Offers decent read and write speeds suitable for a variety of applications.
5. Endurance: Designed to withstand a significant number of program/erase cycles, enhancing durability.
6. Power Efficiency: Operates efficiently, making it suitable for battery-powered devices.
7. Interface: Utilizes standard NAND flash interface protocols for compatibility with various controllers.
8. Application Use: Commonly used in consumer electronics, mobile devices, and embedded systems.
This chip is ideal for applications requiring reliable and efficient bulk storage.
Package
The KLM8G1WEPD-B031 is a DRAM memory chip packaged in a 96-ball FBGA (Fine-pitch Ball Grid Array) configuration. This package type is designed for efficient thermal performance and space-saving in electronic devices.
Pinout
The KLM8G1WEPD-B031 is a 8Gb (1GB x 8-bit) LPDDR3 DRAM memory chip manufactured by Samsung. It typically features a 48-ball FBGA (Fine Ball Grid Array) package, which translates to a pin count of 48.
The functions of the pins in the KLM8G1WEPD-B031 include various data, address, control, and power lines. Key functions include:
- Data I/O: Bidirectional data lines for reading and writing operations.
- Address lines: Used to select specific memory locations.
- Control signals: Includes commands for operations like read, write, refresh, and power management.
- Power supply pins: For VDD and VSS to power the chip.
This memory chip is primarily used in mobile devices and applications requiring low power consumption, high speed, and compact size.
The functions of the pins in the KLM8G1WEPD-B031 include various data, address, control, and power lines. Key functions include:
- Data I/O: Bidirectional data lines for reading and writing operations.
- Address lines: Used to select specific memory locations.
- Control signals: Includes commands for operations like read, write, refresh, and power management.
- Power supply pins: For VDD and VSS to power the chip.
This memory chip is primarily used in mobile devices and applications requiring low power consumption, high speed, and compact size.
Manufacturer
The KLM8G1WEPD-B031 is manufactured by Kioxia Corporation, a leading global provider of flash memory and storage solutions. Kioxia, formerly part of Toshiba Memory Corporation, specializes in NAND flash memory products and solid-state drives (SSDs) used in a variety of applications, including consumer electronics, enterprise storage, and data centers. The company focuses on innovation in memory technology and plays a significant role in advancing storage solutions for both personal and professional use.
Application
KLM8G1WEPD-B031 is a 1GB DDR3 memory module, primarily used in consumer electronics such as laptops, desktops, and tablets. It supports various applications including gaming, multimedia processing, and general computing tasks. Its low power consumption also makes it suitable for mobile devices and embedded systems.
Equivalent
The KLM8G1WEPD-B031 is a NAND flash memory chip, and equivalent products include the Samsung KLM8G1WEPD-B041, Micron MT29F8G08ABAEAWP, and Toshiba TH58NGB8T2JBAIL. Ensure compatibility with your specific application requirements as specifications may vary.
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