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KLM8G1GEUF-B04Q

Name: KLM8G1GEUF-B04Q
Rating: 4.7 (12 reviews)

8GB Memory (ICs) RoHS

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規格

Memory Size	8GB
NAND Operating Voltage (VCCF)	1.8V;3.3V
Operating temperature	-40℃~+105℃

概述

Description

KLM8G1GEUF-B04Q is a specific model of DRAM (Dynamic Random-Access Memory) produced by Samsung, designed for high-performance computing applications. This memory module typically features DDR4 technology, offering improved speed and efficiency compared to previous generations. It is often used in consumer electronics, servers, and high-end workstations, supporting applications that require fast data processing, such as gaming, data analysis, and graphic design.
Key specifications may include a specific capacity (e.g., 8 GB), clock speeds (measured in MHz), and a low voltage operation that conserves energy while maintaining performance. The "B04Q" suffix typically indicates manufacturing details or specific features that differentiate it from other models in Samsung's lineup. Overall, KLM8G1GEUF-B04Q is tailored for users needing reliable and efficient memory solutions in demanding environments.

Features

The KLM8G1GEUF-B04Q is a specific model of DRAM memory module, typically featuring a capacity of 8GB. It often utilizes DDR3 technology, which allows for efficient data transfer rates and lower power consumption compared to older generations. Key features include:
1. Form Factor: SODIMM, designed for laptops and small form-factor systems.
2. Speed: Usually rated at 1600 MHz, providing decent performance for everyday applications.
3. Latency: CL11 or similar, indicating the delay between the memory controller requesting data and the memory module providing it.
4. Voltage: Operates at 1.5V, standard for DDR3 memory.
5. Compatibility: Suitable for a wide range of laptops and motherboards that support DDR3 memory standards.
This module is ideal for enhancing multitasking capabilities and improving overall system performance in compatible devices.

Package

The KLM8G1GEUF-B04Q is a 1GB DDR3 SDRAM memory chip packaged in a 78-ball FBGA (Fine Ball Grid Array) format. This compact packaging allows for efficient thermal dissipation and is suited for mobile applications.

Pinout

The KLM8G1GEUF-B04Q is an 8GB DDR3 SDRAM memory chip produced by Samsung. It has a pin count of 78 pins.
This memory chip operates at a voltage of 1.5V and supports various data transfer rates, typically up to 1600 MT/s. Its primary functions include data storage and retrieval for computing devices, enhancing performance in applications like desktops, laptops, and servers. The chip is designed to work with DDR3 memory controllers, enabling efficient access to data while minimizing power consumption.
Overall, the KLM8G1GEUF-B04Q is suitable for a range of computing applications, providing reliable and fast memory performance.

Manufacturer

The KLM8G1GEUF-B04Q is manufactured by SK hynix, a South Korean semiconductor company. SK hynix specializes in the production of memory chips, including DRAM and NAND flash memory, used in various electronic devices such as smartphones, computers, and servers. Established in 1983, SK hynix is one of the largest memory chip manufacturers globally, known for its technological advancements and innovation in the semiconductor industry. The company is a key player in supplying memory solutions to major tech companies and is part of the SK Group, a large South Korean conglomerate.

Application

The KLM8G1GEUF-B04Q is a 1GB DDR3 SDRAM memory module primarily used in consumer electronics, such as laptops, desktops, and servers. Its applications extend to gaming systems, network devices, and embedded systems, where reliable and efficient memory performance is required. Additionally, it is suitable for industrial applications that demand durable and stable memory solutions.

Equivalent

The KLM8G1GEUF-B04Q chip, a 1GB LPDDR2 DRAM from Samsung, is equivalent to other LPDDR2 chips with similar specifications, such as MT29B1G01ABAFD, H9TQ4G8UDMCR, and W9425G6KH-6. Always verify compatibility based on specific application requirements and performance characteristics.