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K4T1G164QJ-BCE7
1.7V~1.9V 1Gbit 533MHz DDR2 SDRAM FBGA-84 Memory (ICs) RoHS
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規格
| Packaging | FBGA-84 |
| Clock Frequency | 533MHz |
| Current - Supply | 41mA |
| Memory Format | DDR2 SDRAM |
| Memory Size | 1Gbit |
| Operating temperature | -40℃~+90℃ |
| Voltage - Supply | 1.7V~1.9V |
概述
Description
The K4T1G164QJ-BCE7 is a type of DRAM (Dynamic Random Access Memory) chip manufactured by Samsung. Specifically, it is a 1GB (gigabyte) DDR3 SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) component designed for use in various electronic devices, such as computers, smartphones, and tablets. Its architecture supports high-speed data transfer and efficient power consumption, making it suitable for applications requiring fast memory access.
Key specifications typically include a data rate of DDR3-1333 or DDR3-1600, a 64-bit data width, and a voltage of 1.5V. The chip is packaged in a standardized form factor, allowing for easier integration into circuit boards. This memory type is commonly utilized in consumer electronics, offering improved performance over previous generations of RAM while maintaining compatibility with older systems. Overall, the K4T1G164QJ-BCE7 is a reliable choice for manufacturers looking to enhance the memory capabilities of their devices.
Key specifications typically include a data rate of DDR3-1333 or DDR3-1600, a 64-bit data width, and a voltage of 1.5V. The chip is packaged in a standardized form factor, allowing for easier integration into circuit boards. This memory type is commonly utilized in consumer electronics, offering improved performance over previous generations of RAM while maintaining compatibility with older systems. Overall, the K4T1G164QJ-BCE7 is a reliable choice for manufacturers looking to enhance the memory capabilities of their devices.
Features
The K4T1G164QJ-BCE7 is a DRAM (Dynamic Random-Access Memory) component manufactured by Samsung, specifically a 1GB DDR3 SDRAM. Key features include:
1. Capacity: 1GB density, suitable for various applications.
2. Type: DDR3 SDRAM, which offers higher performance compared to previous DDR generations.
3. Speed: Operates at a data rate of 1066 MT/s (megatransfers per second).
4. Voltage: Typically operates at 1.5V, which is standard for DDR3 memory, allowing for lower power consumption.
5. Package: Available in a small form factor, often used in mobile devices and embedded systems.
6. Configuration: Organized in a 16M x 8 configuration, which optimizes data access and bandwidth.
7. Features: Supports features like on-die termination (ODT) and a burst length of 8, enhancing performance and efficiency.
This memory module is commonly used in devices like laptops, desktops, and other electronic equipment requiring reliable and efficient RAM.
1. Capacity: 1GB density, suitable for various applications.
2. Type: DDR3 SDRAM, which offers higher performance compared to previous DDR generations.
3. Speed: Operates at a data rate of 1066 MT/s (megatransfers per second).
4. Voltage: Typically operates at 1.5V, which is standard for DDR3 memory, allowing for lower power consumption.
5. Package: Available in a small form factor, often used in mobile devices and embedded systems.
6. Configuration: Organized in a 16M x 8 configuration, which optimizes data access and bandwidth.
7. Features: Supports features like on-die termination (ODT) and a burst length of 8, enhancing performance and efficiency.
This memory module is commonly used in devices like laptops, desktops, and other electronic equipment requiring reliable and efficient RAM.
Package
The K4T1G164QJ-BCE7 is a DDR3 SDRAM memory chip packaged in a 78-ball FBFGA (Fine Pitch Ball Grid Array) format. This package type is designed for efficient thermal management and high-density applications.
Pinout
The K4T1G164QJ-BCE7 is a DDR3 SDRAM memory chip produced by Samsung. It has a total pin count of 78 pins. This memory device is designed to provide high-speed data processing and is commonly used in various electronics, including computers and mobile devices.
The K4T1G164QJ-BCE7 operates on a voltage range of 1.5V and supports data transfer rates of up to 1600 MT/s. It features a 1Gbit (128MB) density with a 16-bit I/O interface, allowing it to support a wide range of applications. The pins are primarily used for power supply, ground, address, data, and control signals, facilitating communication between the memory and the memory controller.
In summary, the K4T1G164QJ-BCE7 is a 78-pin DDR3 SDRAM chip used for high-speed data storage and processing in modern electronic devices.
The K4T1G164QJ-BCE7 operates on a voltage range of 1.5V and supports data transfer rates of up to 1600 MT/s. It features a 1Gbit (128MB) density with a 16-bit I/O interface, allowing it to support a wide range of applications. The pins are primarily used for power supply, ground, address, data, and control signals, facilitating communication between the memory and the memory controller.
In summary, the K4T1G164QJ-BCE7 is a 78-pin DDR3 SDRAM chip used for high-speed data storage and processing in modern electronic devices.
Manufacturer
The K4T1G164QJ-BCE7 is manufactured by Samsung Electronics. Samsung is a South Korean multinational conglomerate known for its diverse range of products, including consumer electronics, semiconductors, telecommunications equipment, and more. The company is one of the largest manufacturers of memory chips globally, producing DRAM, NAND flash, and other types of memory solutions that are integral to various electronic devices. Samsung Electronics is a subsidiary of the Samsung Group, which operates in multiple sectors, including technology, finance, and construction. The company is recognized for its innovation and leadership in the technology industry.
Application
The K4T1G164QJ-BCE7 is a 1Gb DDR3 SDRAM memory chip primarily used in applications such as smartphones, tablets, laptops, and other portable devices. It is suitable for general computing, gaming consoles, and embedded systems, where efficient memory performance and power consumption are critical. This chip supports high-speed data processing and is ideal for applications requiring fast data access and multitasking capabilities.
Equivalent
The K4T1G164QJ-BCE7 is a 1Gb DDR3 SDRAM chip. Equivalent products include:
1. MT41K256M16HA-125
2. H5TQ4G63AFR-PBA
3. AS4C256M16D3L-125BC
Always verify specifications such as voltage, speed, and pin configuration for compatibility.
1. MT41K256M16HA-125
2. H5TQ4G63AFR-PBA
3. AS4C256M16D3L-125BC
Always verify specifications such as voltage, speed, and pin configuration for compatibility.
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