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K4FBE3D4HM-TFCL
32Gbit 2.133GHz LPDDR4 SDRAM FBGA-200 Memory (ICs) RoHS
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規格
| Packaging | FBGA-200 |
| Clock Frequency | 2.133GHz |
| Current - Supply | 12mA |
| Memory Format | LPDDR4 SDRAM |
| Memory Size | 32Gbit |
| Operating temperature | -40℃~+95℃ |
| Refresh Current | 2mA |
| Voltage - Supply | 1.06V~1.17V;1.7V~1.95V |
概述
Description
K4FBE3D4HM-TFCL is a type of NAND flash memory component produced by Samsung. It is typically used in various electronic devices for data storage due to its high performance, reliability, and efficiency. This memory chip is designed to enhance data throughput and reduce latency, making it suitable for applications in mobile devices, tablets, and other consumer electronics.
The TFCL designation indicates features such as the use of advanced technology for improved density and power efficiency. It supports various storage capacities and interfaces, which allows for flexibility in design and integration into different systems. As part of Samsung's portfolio of memory solutions, K4FBE3D4HM-TFCL contributes to the overall performance and functionality of modern digital devices, catering to the growing demand for high-speed and high-capacity storage solutions.
The TFCL designation indicates features such as the use of advanced technology for improved density and power efficiency. It supports various storage capacities and interfaces, which allows for flexibility in design and integration into different systems. As part of Samsung's portfolio of memory solutions, K4FBE3D4HM-TFCL contributes to the overall performance and functionality of modern digital devices, catering to the growing demand for high-speed and high-capacity storage solutions.
Features
The K4FBE3D4HM-TFCL is a DRAM (Dynamic Random Access Memory) chip manufactured by Samsung. It is part of the LPDDR4 (Low Power Double Data Rate 4) family, designed for mobile devices and applications that require high performance and energy efficiency.
Key features include:
1. Capacity: Typically available in various densities, commonly 4GB to 8GB.
2. Speed: Supports high data rates, usually up to 3200 MT/s, enhancing overall system performance.
3. Power Efficiency: Designed for low power consumption, making it ideal for battery-operated devices.
4. Wide I/O Interface: Offers a wide I/O configuration to improve bandwidth.
5. Package Type: Comes in a compact package suitable for mobile applications, facilitating space-saving designs.
6. Thermal Performance: Developed to withstand varying thermal conditions while ensuring stable operation.
This chip is particularly suitable for smartphones, tablets, and other portable electronics, optimizing both speed and power usage.
Key features include:
1. Capacity: Typically available in various densities, commonly 4GB to 8GB.
2. Speed: Supports high data rates, usually up to 3200 MT/s, enhancing overall system performance.
3. Power Efficiency: Designed for low power consumption, making it ideal for battery-operated devices.
4. Wide I/O Interface: Offers a wide I/O configuration to improve bandwidth.
5. Package Type: Comes in a compact package suitable for mobile applications, facilitating space-saving designs.
6. Thermal Performance: Developed to withstand varying thermal conditions while ensuring stable operation.
This chip is particularly suitable for smartphones, tablets, and other portable electronics, optimizing both speed and power usage.
Package
The K4FBE3D4HM-TFCL is a mobile DRAM memory chip housed in a FBGA (Fine Ball Grid Array) package type. This compact package allows for efficient space utilization and improved thermal performance, making it suitable for high-density applications in mobile devices.
Pinout
The K4FBE3D4HM-TFCL is a DRAM memory chip produced by Samsung. It features a total of 78 pins. This chip is a 4Gb (Gigabit) DDR3 SDRAM, designed for high-performance applications. Its primary function is to serve as volatile memory for various electronic devices, providing temporary storage for data and instructions that the processor needs to access quickly.
The pin configuration includes power supply pins (VDD, VSS), data input/output pins (DQ), address input pins (A), control pins (CS, RAS, CAS, WE), and other supplementary pins for functionality like clock signals. The design and layout of these pins are crucial for ensuring proper communication and operation within a memory subsystem.
The pin configuration includes power supply pins (VDD, VSS), data input/output pins (DQ), address input pins (A), control pins (CS, RAS, CAS, WE), and other supplementary pins for functionality like clock signals. The design and layout of these pins are crucial for ensuring proper communication and operation within a memory subsystem.
Manufacturer
The K4FBE3D4HM-TFCL is manufactured by Samsung Electronics. Samsung is a South Korean multinational conglomerate, primarily known for its consumer electronics, semiconductor manufacturing, and telecommunications. Established in 1938, the company has evolved into one of the largest and most influential technology firms globally. Samsung's semiconductor division is a leading producer of DRAM and NAND flash memory, which are crucial components in various electronic devices, including smartphones, computers, and servers. The K4FBE3D4HM-TFCL specifically refers to a type of DRAM memory chip, highlighting Samsung's significant role in the semiconductor industry.
Application
K4FBE3D4HM-TFCL is a 4GB DDR3 SDRAM memory chip commonly used in various applications, including smartphones, tablets, laptops, and other consumer electronics. Its features make it suitable for high-performance computing, gaming devices, and embedded systems, supporting efficient multitasking and enhanced graphics performance.
Equivalent
The K4FBE3D4HM-TFCL is equivalent to several other DRAM chips, including the K4FBE3D4HM-TFCL, K4FBE3D4HM-TFCR, and similar variants from other manufacturers. Always check the specific datasheet for parameters like pin configuration, voltage, and speed to ensure compatibility in your application.
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