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K4F8E3S4HD-GHCL

Name: K4F8E3S4HD-GHCL
Rating: 4.7 (12 reviews)

8Gbit x32 LPDDR4 FBGA-200 Memory (ICs) RoHS

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規格

Packaging	FBGA-200
Interface	LPDDR4
Memory Format	x32
Memory Size	8Gbit
Operating temperature	-40℃~+105℃
Voltage - Supply	1.8V;1.1V

概述

Description

K4F8E3S4HD-GHCL appears to be a specific alphanumeric code, possibly related to a product, model, or a unique identifier in a particular context, such as technology, manufacturing, or logistics. Without additional context, it is difficult to provide precise information. If it pertains to a specific industry or category, understanding its significance may require consulting relevant documentation or resources associated with that field. If you have more details about the context in which this code is used (e.g., electronics, software, or another industry), I can offer a more targeted explanation.

Features

The K4F8E3S4HD-GHCL is a type of DRAM (Dynamic Random Access Memory) produced by Samsung. It is characterized by the following features:
1. Type: DDR3 SDRAM (Double Data Rate 3 Synchronous Dynamic RAM).
2. Density: 4GB (Gigabytes) of memory capacity.
3. Organization: It typically features a 512M x 8-bit organization, which indicates the arrangement of memory cells.
4. Speed: Operates at a data rate of 1600 MT/s (megatransfers per second).
5. Voltage: Runs on a 1.5V supply, which is standard for DDR3 memory.
6. Package Type: Usually available in a small form factor like a FBGA (Fine Ball Grid Array) package, allowing for efficient space usage on circuit boards.
7. Applications: Commonly used in laptops, desktops, and servers for providing system memory.
This component is designed for high performance and efficiency in computing devices, supporting multitasking and data-intensive applications.

Package

The K4F8E3S4HD-GHCL is a DRAM memory chip from Samsung, typically packaged in a 78-ball BGA (Ball Grid Array) format. This packaging is designed for efficient thermal management and space-saving in electronic devices.

Pinout

The K4F8E3S4HD-GHCL is a DRAM memory chip, specifically a DDR3 SDRAM. It has a pin count of 78 pins in a TSOP-II (Thin Small Outline Package) configuration.
The primary functions of this chip include providing high-speed memory storage for various applications, such as computers and mobile devices. It operates at a voltage of 1.5V and supports data rates of up to 1600 MT/s. The chip features a 64-bit data bus and is organized as 8 banks of 4M x 8 bits, allowing for efficient data access and processing.
In summary, the K4F8E3S4HD-GHCL is a 78-pin DDR3 SDRAM that serves as high-speed volatile memory for various electronic applications.

Manufacturer

The manufacturer of the K4F8E3S4HD-GHCL is Samsung Electronics. Samsung is a South Korean multinational conglomerate known for its wide range of products and services, including consumer electronics, semiconductors, telecommunications equipment, and home appliances. The company is one of the largest manufacturers of memory chips and has a significant presence in the global semiconductor market. Samsung Electronics is renowned for its innovation and technology advancements, producing components not only for its own devices but also for various other electronics manufacturers.

Application

K4F8E3S4HD-GHCL is typically used in electronic applications, particularly in dynamic random-access memory (DRAM) modules. Its application areas include consumer electronics, computers, and mobile devices, where it facilitates data storage and retrieval. Additionally, it may be utilized in high-performance computing and gaming systems, enhancing speed and efficiency in data processing.

Equivalent

The K4F8E3S4HD-GHCL chip is a DRAM memory component. Equivalent products typically include other DDR3 SDRAM chips with similar specifications, such as K4F8E3S4F-HC or similar models from manufacturers like Micron, Hynix, and Samsung. When searching for equivalents, consider factors like density, speed (e.g., DDR3 1600), package type, and voltage. Always verify compatibility with your specific application.