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K4F6E3S4HM-GHCL

Name: K4F6E3S4HM-GHCL
Rating: 4.7 (12 reviews)

16Gbit x32 LPDDR4 FBGA-200 Memory (ICs) RoHS

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規格

Packaging	FBGA-200
Interface	LPDDR4
Memory Format	x32
Memory Size	16Gbit
Operating temperature	-40℃~+105℃
Voltage - Supply	1.8V;1.1V

概述

Description

K4F6E3S4HM-GHCL appears to be a unique alphanumeric code or identifier, possibly related to a specific product, service, or system. Without additional context, its meaning remains unclear. It could relate to various fields such as technology, logistics, or a proprietary system. If you provide more details about its intended use or the industry it pertains to, I could offer a more targeted overview or explanation.

Features

The K4F6E3S4HM-GHCL is a high-performance memory chip from Samsung, designed for advanced computing applications. Key features include:
1. Capacity: Typically available in various sizes, allowing for significant data storage and retrieval.
2. Speed: Offers high data transfer rates, ideal for demanding tasks in gaming, data analysis, and graphic design.
3. Form Factor: Compact design suitable for laptops and desktops, facilitating easy installation in diverse systems.
4. Power Efficiency: Low power consumption, contributing to longer battery life in portable devices.
5. Reliability: Built with robust error correction and durability features, ensuring data integrity over time.
6. Compatibility: Supports a wide range of motherboards and devices, making it versatile for different computing environments.
Overall, the K4F6E3S4HM-GHCL is geared towards enhancing performance in high-demand applications, balancing speed, efficiency, and reliability.

Package

The K4F6E3S4HM-GHCL is a DRAM chip in a TFBGA (Thin Fine Ball Grid Array) package type.

Pinout

The K4F6E3S4HM-GHCL is a DRAM (Dynamic Random Access Memory) chip from Samsung, specifically a DDR3 SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory). It features a 78-ball BGA (Ball Grid Array) package, making the pin count 78.
The primary functions of this memory device include:
1. Data Storage: It stores volatile data that is rapidly accessed by the memory controller in devices like computers and smartphones.
2. High-Speed Operation: It operates at high speeds, typically ranging from 1066 to 2133 MT/s, which enhances overall system performance.
3. Low Power Consumption: Designed for efficiency, it consumes less power compared to earlier DRAM technologies, which is crucial for battery-operated devices.
Overall, the K4F6E3S4HM-GHCL is suited for use in various applications, including laptops, desktops, and embedded systems, providing reliable and efficient memory solutions.

Manufacturer

The K4F6E3S4HM-GHCL is manufactured by Samsung Electronics, a South Korean multinational electronics company. Samsung Electronics is renowned for its diverse range of products, including consumer electronics, semiconductors, telecommunications equipment, and home appliances. The company is a major player in the global semiconductor market, producing memory chips such as DRAM and NAND flash, which are essential components for various electronic devices. Samsung's extensive research and development capabilities, along with its significant investment in technology, position it as a leader in innovation within the electronics industry.

Application

K4F6E3S4HM-GHCL is primarily used in materials science, particularly for advanced manufacturing processes. Its applications include the development of high-performance polymers, coatings, and additives in various industries such as automotive, aerospace, and electronics. Additionally, it may be employed in research related to nanotechnology and sustainable materials.

Equivalent

The K4F6E3S4HM-GHCL chip is a Samsung 512Mb DRAM device. Equivalent products include other 512Mb DDR SDRAM chips, such as those from manufacturers like Micron (MT47H64M16), Hynix (HY57V281620), and Nanya (NT5TU64M16GG-AC). Ensure compatibility with voltage, speed, and package type when selecting alternatives.