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K4E6E304EB-EGCF

Name: K4E6E304EB-EGCF
Rating: 4.7 (12 reviews)

FBGA-178 Memory (ICs) RoHS

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規格

Packaging

FBGA-178

概述

Description

"Introduction to K4E6E304EB-EGCF" appears to refer to a specific model, protocol, or product code, but it lacks sufficient context for a detailed explanation. In domains such as technology, it could denote a product version or a specific configuration in hardware or software. Understanding its relevance would require more context about the industry or application it pertains to—such as electronics, software development, or telecommunications. If you’re looking for detailed information about its specifications, functionality, or use cases, please provide additional details or clarify the context in which it is used.

Features

The K4E6E304EB-EGCF is a NAND flash memory chip manufactured by Samsung. It features a capacity of 64 gigabytes (GB) and utilizes the eMMC (embedded MultiMediaCard) interface, making it suitable for various applications such as smartphones, tablets, and other consumer electronics.
Key features include:
1. High Performance: It offers fast read and write speeds, enhancing overall device performance.
2. Low Power Consumption: Designed for energy efficiency, it helps extend battery life in portable devices.
3. Reliability: Built with advanced error correction and wear leveling technologies to ensure data integrity and longevity.
4. Compact Size: Its small form factor allows for easy integration into space-constrained designs.
5. Wide Operating Temperature Range: Suitable for various environmental conditions, ensuring stable performance in different settings.
Overall, the K4E6E304EB-EGCF is optimized for high-performance applications requiring efficient and reliable storage solutions.

Package

The K4E6E304EB-EGCF is a DRAM memory chip packaged in a TFBGA (Thin Fine Ball Grid Array) format. This type of package is commonly used for memory devices due to its compact size and effective heat dissipation.

Pinout

The K4E6E304EB-EGCF is a 4 Gb (gigabit) DDR3 SDRAM memory chip, produced by Samsung. It comes in a 78-ball FBGA (Fine Pitch Ball Grid Array) package, featuring a pin count of 78.
The primary function of this memory chip is to provide high-speed data storage for various applications, including mobile devices, computing systems, and consumer electronics. It operates at a voltage of 1.5V and supports data rates of up to 1600 MT/s (megatransfers per second). DDR3 SDRAM technology allows for increased bandwidth and improved power efficiency compared to its predecessors.
The pin configuration facilitates connections for power, ground, data input/output, and control signals, enabling efficient data processing and storage.

Manufacturer

The manufacturer of the K4E6E304EB-EGCF is Samsung Electronics. Samsung is a South Korean multinational conglomerate headquartered in Suwon, South Korea. It is one of the largest technology companies in the world, primarily known for its consumer electronics, semiconductors, telecommunications equipment, and digital media technologies. The company operates in various sectors, including mobile devices, televisions, home appliances, and memory chips. Samsung Semiconductors, a division of Samsung Electronics, focuses on producing memory and storage solutions, including DRAM and NAND flash memory, which are vital for various electronic devices.

Application

The K4E6E304EB-EGCF is a NAND flash memory chip commonly used in applications such as smartphones, tablets, digital cameras, and other consumer electronics for data storage. It also finds use in embedded systems, automotive applications, and industrial devices for reliable non-volatile memory solutions, enabling fast data access and storage capabilities in various electronic devices.

Equivalent

The K4E6E304EB-EGCF chip is a Samsung DDR3 SDRAM memory chip. Equivalent products include:
- Micron MT41K256M16HA-125
- Hynix H5TQ2G83CFR
- Nanya NT5CB256M16DP-DI
Always verify compatibility based on specifications such as voltage, speed, and timing when considering alternatives.