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K4B4G1646E-BYMA0CV

Name: K4B4G1646E-BYMA0CV
Rating: 4.7 (12 reviews)

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規格

Manufacturer	Samsung
Package	BGA

概述

Description

The K4B4G1646E-BYMA0CV is a 4Gb DDR3 SDRAM memory chip manufactured by Samsung. It features a double data rate architecture, allowing for high-speed data transfer rates. This memory chip operates at a voltage of 1.5V and is designed for use in various applications, including mobile devices, laptops, and embedded systems.
Key specifications include a 512MB x 8 configuration, 8-bit data width, and a maximum clock frequency of 800 MHz, ensuring efficient performance for multitasking and data-intensive applications. The chip also adheres to JEDEC standards, which ensures compatibility across different devices and platforms.
The K4B4G1646E-BYMA0CV is optimized for low power consumption, making it suitable for battery-operated devices. With its high density and reliability, it is a popular choice among manufacturers looking to enhance performance without sacrificing energy efficiency.

Features

The K4B4G1646E-BYMA0CV is a DDR3 SDRAM memory chip manufactured by Samsung. It features a density of 4Gb (gigabits) organized as 512Mx8 bits, making it suitable for various applications in computing and mobile devices. The chip operates at a voltage of 1.5V, which is standard for DDR3 technology, helping to reduce power consumption.
Key features include:
- Data Rate: Supports speeds up to DDR3-1600, allowing for efficient data transfer.
- Package Type: Typically comes in a small FBGA (Fine Ball Grid Array) package, enhancing space efficiency on PCBs.
- Temperature Range: Designed for standard operating conditions, making it reliable for consumer electronics.
- Compatibility: Works with various chipsets and can be used in both desktops and laptops.
This memory chip is ideal for applications requiring high performance, such as gaming and graphics processing, while maintaining energy efficiency.

Package

The K4B4G1646E-BYMA0CV is a DRAM chip packaged in a 78-ball TFBGA (Thin Fine-pitch Ball Grid Array) format. This package type is designed for space efficiency and improved thermal performance in compact electronic designs.

Pinout

The K4B4G1646E-BYMA0CV is a DRAM chip from Samsung, specifically a 4Gb (Gigabit) DDR3 SDRAM. It typically comes in a 78-ball FBGA (Fine Ball Grid Array) package.
The pin count for this memory chip is 78 balls. The functions of the pins include standard memory interface signals such as:
- Data inputs/outputs (DQ)
- Data strobe signals (DQS)
- Address inputs (A)
- Control signals (CS, RAS, CAS, WE)
- Power supply pins (VDD, VSS)
- Additional signals for operation and control, such as reset and clock inputs.
This configuration allows for efficient data storage and retrieval in computing applications.

Manufacturer

The K4B4G1646E-BYMA0CV is manufactured by Samsung Electronics, a South Korean multinational electronics company. Samsung is known for its diverse product range, including semiconductors, consumer electronics, and telecommunications equipment. The company is one of the largest manufacturers of memory chips in the world, producing DRAM, NAND flash, and other semiconductor products. Samsung Electronics plays a significant role in the global technology market, focusing on innovation and high-quality manufacturing.

Application

The K4B4G1646E-BYMA0CV is a 4Gb DDR3 DRAM memory chip used in various applications, including mobile devices, laptops, tablets, and other consumer electronics. Its features support high-speed data processing and efficient power consumption, making it suitable for gaming systems, servers, and networking equipment. Additionally, it is utilized in automotive electronics and industrial applications where reliable memory performance is crucial.

Equivalent

The K4B4G1646E-BYMA0CV is a 4Gb DDR3 SDRAM memory chip. Equivalent products include:
1. Hynix H5TQ4G63AFR
2. Micron MT41K256M16HA
3. Samsung K4B4G1646E-BYMA
Ensure to verify compatibility regarding specifications and pin configurations when considering substitutes.