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K4B4G1646E-BYMA

Name: K4B4G1646E-BYMA
Rating: 4.7 (12 reviews)

4Gbit 1.28V~1.575V 933MHz DDR3L SDRAM FBGA-96 Memory (ICs) RoHS

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資料表 K4B4G1646E-BYMA DataSheet
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規格

Packaging	FBGA-96
Clock Frequency	933MHz
Current - Supply	14mA
Memory Format	DDR3L SDRAM
Memory Size	4Gbit
Operating temperature	0℃~+95℃
Refresh Current	2mA;3mA
Voltage - Supply	1.28V~1.575V

概述

Description

K4B4G1646E-BYMA is a specific type of DRAM (Dynamic Random Access Memory) module manufactured by Samsung. It falls under the category of DDR3 (Double Data Rate 3) SDRAM, which is commonly used in various electronic devices, including computers and laptops. The module offers a memory capacity of 4 Gbits and operates at a voltage of 1.5V. With a data transfer rate of 1066 Mbps to 1600 Mbps, it provides efficient performance for applications requiring quick access to data.
The BYMA designation typically indicates specific characteristics such as the package type or speed grade. This DRAM module supports various memory architectures and is often used in consumer electronics, including smartphones, tablets, and gaming consoles, where fast and reliable memory access is essential. Overall, K4B4G1646E-BYMA is notable for its efficiency and compatibility with a wide range of devices, contributing to improved performance in multitasking and data-intensive applications.

Features

The K4B4G1646E-BYMA is a high-performance DDR3 SDRAM memory chip produced by Samsung. It features a capacity of 4 Gb (gigabits) and operates at a voltage of 1.5V. This memory chip supports data rates of up to 1600 MT/s (megatransfers per second) and is designed for use in various applications, including laptops, desktops, and other computing devices.
Key features include:
- Organization: 512Mx8 (512 million x 8 bits)
- Interface: DDR3 SDRAM
- Speed: Data rate of 1600 MT/s
- Latency: Low latency for enhanced performance
- Temperature Range: Commercial grade, suitable for standard operating conditions
- Package Type: Typically available in a 78-ball FBGA package
The K4B4G1646E-BYMA is known for its reliability and efficiency, making it suitable for high-performance computing and memory-intensive applications.

Package

The K4B4G1646E-BYMA is a DRAM memory chip packaged in a 78-ball FBGA (Fine Ball Grid Array) configuration. This type of packaging allows for a compact design and efficient thermal management, suitable for various applications in consumer electronics and computing devices.

Pinout

The K4B4G1646E-BYMA is a DDR3 SDRAM memory chip manufactured by Samsung. It features a total of 78 pins. This memory device is organized as 4 Gbit (gigabits) and operates with a data width of 16 bits per device. The primary functions of the K4B4G1646E-BYMA include providing volatile data storage and supporting high-speed data transfer rates, making it suitable for various applications in computing and consumer electronics. It operates at a voltage of 1.5V and is designed for use in memory modules, such as DIMMs, for laptops, desktops, and servers. The chip is capable of operating at multiple speeds, supporting data rates up to 1600 MT/s (mega-transfers per second).

Manufacturer

The K4B4G1646E-BYMA is manufactured by Samsung Electronics, a South Korean multinational company. Samsung is primarily known for its consumer electronics, semiconductors, and telecommunications equipment. It is one of the largest manufacturers of memory chips in the world, producing a wide range of products including DRAM, NAND flash, and other semiconductor solutions. Samsung Electronics is part of the larger Samsung Group, which encompasses various sectors such as technology, construction, and financial services. The company's focus on innovation and advanced technology has positioned it as a leader in the global electronics market.

Application

The K4B4G1646E-BYMA is a 4GB DDR3 SDRAM memory chip commonly used in applications such as consumer electronics, smartphones, tablets, laptops, and desktop computers. It supports high-speed data processing and multitasking, making it suitable for gaming, multimedia applications, and high-performance computing systems. Additionally, it can be utilized in networking equipment and embedded systems requiring efficient memory solutions.

Equivalent

The K4B4G1646E-BYMA chip is a 4Gb DDR3 SDRAM memory chip. Equivalent products include the Micron MT41K256M16HA-125, Hynix H5TQ4G63AFR, and Samsung K4B4G1646B-BYMA. These alternatives should have similar specifications such as density, voltage, and package type. Always verify compatibility with your specific application before substitution.