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K4B4G1646E-BCMA
4Gbit 1.425V~1.575V 1.066GHz DDR3 SDRAM FBGA-96(7.5x13.3) Memory (ICs) RoHS
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規格
| Packaging | FBGA-96(7.5x13.3) |
| Clock Frequency | 1.066GHz |
| Current - Supply | 55mA |
| Memory Format | DDR3 SDRAM |
| Memory Size | 4Gbit |
| Operating temperature | 0℃~+95℃ |
| Refresh Current | 2mA |
| Voltage - Supply | 1.425V~1.575V |
概述
Description
K4B4G1646E-BCMA is a type of DRAM chip, specifically a 1GB DDR3 (Double Data Rate 3) Synchronous Dynamic Random Access Memory module produced by Samsung. This memory chip operates at a voltage of 1.5V and utilizes a 64-bit data width, making it suitable for various applications, including computers and mobile devices. The "K4B4G" prefix indicates the manufacturer and product family, while "1646" signifies the chip's configuration and density. The "E" denotes the specific package type, and "BCMA" often refers to a specific manufacturing lot or variant. DDR3 memory is known for its improved speed and efficiency compared to its predecessors, providing better bandwidth and lower power consumption. This makes K4B4G1646E-BCMA a common choice for performance-sensitive applications in consumer electronics and computing devices.
Features
The K4B4G1646E-BCMA is a DRAM (Dynamic Random Access Memory) component produced by Samsung. Here are its key features:
1. Type: DDR3 SDRAM (Double Data Rate 3 Synchronous Dynamic Random Access Memory).
2. Density: 4 Gbit (gigabits) per chip.
3. Organization: 512M x 4 bits, which indicates its data organization structure.
4. Speed: Operates at speeds up to 1600 MT/s (megatransfers per second).
5. Voltage: Typically operates at a voltage of 1.5V, which is standard for DDR3 technology.
6. Package: Available in a standard 80-ball FBGA (Fine Ball Grid Array) package.
7. Applications: Commonly used in mobile devices, laptops, and other consumer electronics requiring efficient memory solutions.
These features make the K4B4G1646E-BCMA suitable for high-performance applications while ensuring power efficiency.
1. Type: DDR3 SDRAM (Double Data Rate 3 Synchronous Dynamic Random Access Memory).
2. Density: 4 Gbit (gigabits) per chip.
3. Organization: 512M x 4 bits, which indicates its data organization structure.
4. Speed: Operates at speeds up to 1600 MT/s (megatransfers per second).
5. Voltage: Typically operates at a voltage of 1.5V, which is standard for DDR3 technology.
6. Package: Available in a standard 80-ball FBGA (Fine Ball Grid Array) package.
7. Applications: Commonly used in mobile devices, laptops, and other consumer electronics requiring efficient memory solutions.
These features make the K4B4G1646E-BCMA suitable for high-performance applications while ensuring power efficiency.
Package
The K4B4G1646E-BCMA is packaged in a 78-ball FBGA (Fine Ball Grid Array) format, which is commonly used for memory chips. This package type provides a compact design with good thermal performance and electrical efficiency, suitable for applications in mobile devices and other electronic systems.
Pinout
The K4B4G1646E-BCMA is a DDR3 SDRAM memory chip from Samsung, featuring a pin count of 78. It operates with a 1.5V power supply and supports a data rate of 2133 MT/s. The chip is organized as 4 Gbit and utilizes a x8 data interface, making it suitable for various applications like laptops and desktop computers. The key functions of the K4B4G1646E-BCMA include data storage, fast read/write operations, and efficient power management, contributing to overall system performance in memory-intensive tasks.
Manufacturer
The K4B4G1646E-BCMA is manufactured by Samsung Electronics. Samsung Electronics is a South Korean multinational company and a major subsidiary of the Samsung Group. Founded in 1969, it specializes in the production of a wide range of electronic products, including semiconductors, consumer electronics, and telecommunications equipment. In the semiconductor sector, Samsung is one of the world's leading manufacturers of DRAM and NAND flash memory, significantly contributing to advancements in memory technology. The K4B4G1646E-BCMA specifically belongs to the DRAM family, used in various applications such as computers, smartphones, and other consumer electronics. Samsung is known for its innovation, research and development, and global presence in the electronics industry.
Application
The K4B4G1646E-BCMA is a 4Gb DDR3 SDRAM memory chip primarily used in various applications, including smartphones, tablets, and laptops. It supports high-speed data processing and is suitable for graphics-intensive tasks, gaming devices, and other consumer electronics requiring efficient memory performance. Its low power consumption makes it ideal for mobile devices, enhancing battery life while maintaining optimal performance.
Equivalent
The K4B4G1646E-BCMA is a 4GB DDR3 SDRAM memory chip. Equivalent products include:
1. Hynix H5TQ4G63AFR
2. Micron MT41K256M16HA-125
3. Samsung K4B4G1646E-BCH9
Always verify compatibility regarding specifications like speed, voltage, and pin configuration before substitution.
1. Hynix H5TQ4G63AFR
2. Micron MT41K256M16HA-125
3. Samsung K4B4G1646E-BCH9
Always verify compatibility regarding specifications like speed, voltage, and pin configuration before substitution.
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