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K4B4G1646D-BYMA
4Gbit 1.35V 933MHz DDR3L SDRAM FBGA-96 Memory (ICs) RoHS
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規格
| Packaging | FBGA-96 |
| Clock Frequency | 933MHz |
| Memory Format | DDR3L SDRAM |
| Memory Size | 4Gbit |
| Operating temperature | 0℃~+85℃ |
| Voltage - Supply | 1.35V |
概述
Description
K4B4G1646D-BYMA is a part number that typically refers to a specific type of DRAM (Dynamic Random Access Memory) chip, manufactured by Samsung. This particular model is a 4Gb (gigabit) DDR3 SDRAM, which is used in various electronic devices for temporary data storage to enhance processing speed and efficiency. DDR3 stands for "Double Data Rate 3," indicating that it is the third generation of DRAM technology, characterized by its ability to transfer data twice per clock cycle, enhancing performance while maintaining lower power consumption compared to its predecessors.
The "K4B4G1646D" part of the code signifies specific technical attributes of the chip, including its configuration and die revision, while "BYMA" is a further specification related to the speed, temperature range, or packaging type. These memory chips are used in a broad range of applications, from personal computers and laptops to servers and other high-tech systems. They are valued for their balance of speed, efficiency, and cost-effectiveness, making them a popular choice for both consumer and industrial electronics.
The "K4B4G1646D" part of the code signifies specific technical attributes of the chip, including its configuration and die revision, while "BYMA" is a further specification related to the speed, temperature range, or packaging type. These memory chips are used in a broad range of applications, from personal computers and laptops to servers and other high-tech systems. They are valued for their balance of speed, efficiency, and cost-effectiveness, making them a popular choice for both consumer and industrial electronics.
Features
The K4B4G1646D-BYMA is a DRAM module from Samsung's DDR3 SDRAM lineup. Here are its key features:
1. Capacity: It typically offers a capacity of 4Gb (Gigabit), which equates to 512MB per chip.
2. Technology: DDR3 (Double Data Rate 3), ensuring high-speed data transfer rates compared to DDR2.
3. Voltage: Operates at a standard voltage of 1.5V, which helps in reducing power consumption.
4. Data Rate and Speed: Supports a data rate of up to 1600 Mbps (megabits per second), which correlates to a memory clock speed of 800 MHz.
5. Pin Configuration: Usually configured in a 78-ball FBGA (Fine-Pitch Ball Grid Array) package for efficient integration into circuit boards.
6. Latency: Offers a CAS (Column Address Strobe) latency of CL11, which affects the speed at which data can be accessed.
7. Applications: Suitable for use in a wide range of computing applications, including desktops, laptops, and servers.
These features make the K4B4G1646D-BYMA a reliable choice for systems requiring efficient, high-speed memory performance.
1. Capacity: It typically offers a capacity of 4Gb (Gigabit), which equates to 512MB per chip.
2. Technology: DDR3 (Double Data Rate 3), ensuring high-speed data transfer rates compared to DDR2.
3. Voltage: Operates at a standard voltage of 1.5V, which helps in reducing power consumption.
4. Data Rate and Speed: Supports a data rate of up to 1600 Mbps (megabits per second), which correlates to a memory clock speed of 800 MHz.
5. Pin Configuration: Usually configured in a 78-ball FBGA (Fine-Pitch Ball Grid Array) package for efficient integration into circuit boards.
6. Latency: Offers a CAS (Column Address Strobe) latency of CL11, which affects the speed at which data can be accessed.
7. Applications: Suitable for use in a wide range of computing applications, including desktops, laptops, and servers.
These features make the K4B4G1646D-BYMA a reliable choice for systems requiring efficient, high-speed memory performance.
Package
The K4B4G1646D-BYMA is a DRAM chip from Samsung, typically found in a 78-ball Fine-Pitch Ball Grid Array (FBGA) package. This package type is designed for high-density memory applications, offering a compact and efficient layout for mounting on circuit boards.
Pinout
The K4B4G1646D-BYMA is a 4Gb DDR3 SDRAM memory chip manufactured by Samsung. It typically comes in a 78-ball FBGA (Fine-Pitch Ball Grid Array) package. This configuration is designed to support high-speed data transfer and enhanced memory capabilities.
The primary function of the K4B4G1646D-BYMA is to provide volatile memory for computing devices, enabling efficient data storage and retrieval operations. It is widely used in applications such as computers, servers, and other electronic devices that require reliable and fast memory solutions. The chip supports features like programmable CAS latency, burst length, and various power-saving modes, making it versatile for different computing needs.
The primary function of the K4B4G1646D-BYMA is to provide volatile memory for computing devices, enabling efficient data storage and retrieval operations. It is widely used in applications such as computers, servers, and other electronic devices that require reliable and fast memory solutions. The chip supports features like programmable CAS latency, burst length, and various power-saving modes, making it versatile for different computing needs.
Manufacturer
The K4B4G1646D-BYMA is a DRAM memory chip manufactured by Samsung Electronics. Samsung is a South Korean multinational conglomerate known for being one of the world's largest producers of electronic devices. The company operates in various sectors, including consumer electronics, semiconductors, telecommunications equipment, and more. Samsung is recognized for its innovation and broad product portfolio, which includes smartphones, televisions, home appliances, and memory solutions like DRAM and NAND flash. The company plays a significant role in the global technology industry and is a major supplier for various technology companies worldwide.
Application
The K4B4G1646D-BYMA is a type of DDR3 SDRAM chip used in various electronic devices for efficient and high-speed data processing. Its primary application areas include computers, laptops, servers, and networking equipment. Additionally, it can be used in consumer electronics like gaming consoles and smart TVs, as well as in industrial and automotive systems requiring reliable memory performance.
Equivalent
The K4B4G1646D-BYMA is a DDR3 SDRAM chip produced by Samsung. Equivalent products can include DDR3 SDRAM chips from other manufacturers such as:
1. Hynix H5TQ4G63AFR
2. Micron MT41J256M16HA
3. Elpida EDJ4216E4PB
4. Nanya NT5CB256M16DP
These alternatives generally have similar specifications and compatibility, but always verify datasheets for specific use-case requirements.
1. Hynix H5TQ4G63AFR
2. Micron MT41J256M16HA
3. Elpida EDJ4216E4PB
4. Nanya NT5CB256M16DP
These alternatives generally have similar specifications and compatibility, but always verify datasheets for specific use-case requirements.
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