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K4B4G1646D-BCK0

Name: K4B4G1646D-BCK0
Rating: 4.7 (12 reviews)

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資料表 K4B4G1646D-BCK0 DataSheet
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規格

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Obsolete
HTS	8542.32.00.36
Automotive	No
PPAP	No
Chip Density (bit)	4G
Number of Bits/Word (bit)	16
Interface Type	SSTL_1.5
Minimum Operating Supply Voltage (V)	1.425
Maximum Operating Supply Voltage (V)	1.575
Operating Current (mA)	118
Minimum Operating Temperature (°C)	0
Maximum Operating Temperature (°C)	95
Mounting	Surface Mount
Package Width	7.5
Package Length	13.3
PCB changed	90
Standard Package Name	BGA
Supplier Package	FBGA
Pin Count	90
Lead Shape	Ball
DRAM Type	DDR3 SDRAM
Organization	256Mx16
Number of Internal Banks	8
Number of Words per Bank	32M
Data Bus Width (bit)	16
Maximum Clock Rate (MHz)	1600
Maximum Access Time (ns)	0.225
Address Bus Width (bit)	18
Number of I/O Lines (bit)	16
Supplier Temperature Grade	Commercial

概述

Description

The K4B4G1646D-BCK0 is a type of DRAM (Dynamic Random Access Memory) chip, specifically a DDR3 (Double Data Rate 3) memory module. It is produced by Samsung and typically features a capacity of 4GB per chip. This part operates at a voltage of 1.5V and supports data rates up to 1600 MT/s (megatransfers per second), which makes it suitable for various applications in computing, including personal computers, servers, and mobile devices.
This memory chip uses a 16-bit data bus and is organized as 512M x 8 bits, allowing for efficient data storage and retrieval. Its design adheres to JEDEC standards, ensuring compatibility with a wide range of motherboards and systems. The K4B4G1646D-BCK0 is valued for its high speed and reliability, making it an essential component in modern electronics.

Features

The K4B4G1646D-BCK0 is a 4Gb (gigabit) DDR3 SDRAM (Synchronous Dynamic Random Access Memory) chip. Here are its key features:
1. Density: 4Gb capacity, suitable for high-performance applications.
2. Data Rate: Operates at DDR3 standards, typically supporting data rates from 800 to 2133 MT/s (million transfers per second).
3. Organization: It is organized as 512M x 8 bits, allowing for efficient data handling.
4. Voltage: Operates at a low voltage of 1.5V, contributing to energy efficiency.
5. Package: Available in a compact FBGA (Fine Ball Grid Array) package, facilitating space-saving designs.
6. Latency: Offers low latency options, enhancing performance for memory-intensive tasks.
7. Use Cases: Ideal for applications in computing, networking, and consumer electronics, including laptops and servers.
Overall, the K4B4G1646D-BCK0 is designed to provide reliable performance in various high-speed memory applications.

Package

The K4B4G1646D-BCK0 is a DRAM memory chip packaged in a 78-ball Fine Pitch Ball Grid Array (FBGA). This package type is commonly used for mobile applications, providing a compact form factor suitable for space-constrained designs.

Pinout

The K4B4G1646D-BCK0 is a 4Gb (gigabit) DDR3 SDRAM memory chip produced by Samsung, featuring a 64-bit data width. It has a pin count of 78, packaged in a small FBGA (Fine Ball Grid Array).
The primary functions of this memory chip include providing high-speed data storage and access for computing devices, such as laptops, desktops, and servers. It operates with a data rate of up to 1600 MT/s (megatransfers per second) and supports a 1.5V power supply.
Key features include a burst length of 8, various operating modes, and compatibility with DDR3 memory standards. It is designed for applications requiring efficient performance, low power consumption, and reliable data handling in memory-intensive tasks.
For further details, refer to the datasheet provided by the manufacturer.

Manufacturer

The K4B4G1646D-BCK0 is manufactured by Samsung Electronics, a leading global technology company based in South Korea. Samsung Electronics is a subsidiary of the Samsung Group, specializing in the production of a wide range of electronic products and components, including semiconductors, displays, mobile devices, and consumer electronics. The K4B4G1646D-BCK0 is a DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) chip, commonly used in various applications, including computers and mobile devices. Samsung is known for its innovation and leadership in the semiconductor industry, contributing significantly to advancements in memory technology.

Application

The K4B4G1646D-BCK0 is a 4Gb DDR3 SDRAM memory chip, commonly used in applications such as mobile devices, laptops, and tablets. Its high-speed performance and low power consumption make it suitable for consumer electronics, gaming consoles, and servers, where efficient data processing and memory storage are critical. Additionally, it can be utilized in embedded systems and industrial applications requiring reliable memory solutions.

Equivalent

The K4B4G1646D-BCK0 is a DRAM chip from Samsung. Equivalent products include:
1. Micron MT41K256M16HA-125
2. Hynix H5TQ4G63AFR
3. Nanya NT5CB256M16DP-125
Ensure compatibility with your application, as specifications like speed, voltage, and timings may vary across manufacturers.