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K4B2G1646F-BMMA
1.35V 2Gbit FBGA-96 Memory (ICs) RoHS
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規格
| Packaging | FBGA-96 |
| Memory Size | 2Gbit |
| Operating temperature | -40℃~+95℃ |
| Voltage - Supply | 1.35V |
概述
Description
K4B2G1646F-BMMA is a type of DRAM (Dynamic Random-Access Memory) chip produced by Samsung. It belongs to the LPDDR4 (Low Power Double Data Rate 4) family, which is designed for mobile devices, including smartphones and tablets. This memory chip is characterized by its low power consumption, high speed, and efficiency, making it suitable for applications requiring fast data access and processing while extending battery life.
The designation "K4B2G1646F-BMMA" indicates specific features such as the organization of memory cells, capacity (2GB), and speed grade. Generally, LPDDR4 chips like this one support data transfer rates up to 4266 Mbps, significantly improving overall device performance compared to earlier memory technologies. With its compact design and low power requirements, K4B2G1646F-BMMA plays a crucial role in enhancing the performance of modern mobile devices.
The designation "K4B2G1646F-BMMA" indicates specific features such as the organization of memory cells, capacity (2GB), and speed grade. Generally, LPDDR4 chips like this one support data transfer rates up to 4266 Mbps, significantly improving overall device performance compared to earlier memory technologies. With its compact design and low power requirements, K4B2G1646F-BMMA plays a crucial role in enhancing the performance of modern mobile devices.
Features
The K4B2G1646F-BMMA is a 2GB DDR3 SDRAM (Synchronous Dynamic Random Access Memory) chip, designed for high-performance computing applications. Key features include:
- Memory Type: DDR3 DRAM, offering improved performance over DDR2.
- Capacity: 2GB, suitable for various applications including mobile devices and laptops.
- Data Rate: Operates at a data rate of 1600 MT/s (megatransfers per second).
- Package Type: Typically comes in a small FBGA (Fine Ball Grid Array) package, facilitating compact designs.
- Voltage: Operates at a low voltage of 1.5V, enhancing energy efficiency.
- Organization: The chip is organized as 256M x 16 bits, allowing for efficient data storage and retrieval.
This memory is ideal for applications requiring fast data access and energy efficiency, such as embedded systems and portable devices.
- Memory Type: DDR3 DRAM, offering improved performance over DDR2.
- Capacity: 2GB, suitable for various applications including mobile devices and laptops.
- Data Rate: Operates at a data rate of 1600 MT/s (megatransfers per second).
- Package Type: Typically comes in a small FBGA (Fine Ball Grid Array) package, facilitating compact designs.
- Voltage: Operates at a low voltage of 1.5V, enhancing energy efficiency.
- Organization: The chip is organized as 256M x 16 bits, allowing for efficient data storage and retrieval.
This memory is ideal for applications requiring fast data access and energy efficiency, such as embedded systems and portable devices.
Package
The K4B2G1646F-BMMA is a DDR3 SDRAM memory chip packaged in a 78-ball TFBGA (Thin Fine Ball Grid Array) format. This compact package type is designed for high-density memory applications, offering improved performance and efficiency in various electronic devices.
Pinout
The K4B2G1646F-BMMA is a 2Gb DDR3 SDRAM memory chip, designed for applications that require high-speed memory solutions. It features a 66-ball FBGA (Fine Ball Grid Array) package, with a pin count of 66.
The primary functions of this memory chip include data storage and retrieval in computing systems, where it operates at various frequencies and supports multiple data rates. This chip typically operates at 1.5V and supports a data rate of up to 1600 MT/s. It is commonly used in laptops, desktops, and other electronic devices that require efficient memory performance.
The K4B2G1646F-BMMA is designed to be compatible with JEDEC standards for DDR3 memory, ensuring it can be integrated into a wide range of applications.
The primary functions of this memory chip include data storage and retrieval in computing systems, where it operates at various frequencies and supports multiple data rates. This chip typically operates at 1.5V and supports a data rate of up to 1600 MT/s. It is commonly used in laptops, desktops, and other electronic devices that require efficient memory performance.
The K4B2G1646F-BMMA is designed to be compatible with JEDEC standards for DDR3 memory, ensuring it can be integrated into a wide range of applications.
Manufacturer
The K4B2G1646F-BMMA is manufactured by Samsung Electronics, a South Korean multinational company. Samsung is primarily known for its diverse array of electronic products, including semiconductors, consumer electronics, and telecommunications equipment. Within the semiconductor sector, Samsung is one of the world's leading manufacturers of memory chips, including DRAM and NAND flash memory, which are essential for a variety of applications in computers, smartphones, and other electronic devices. Samsung Electronics is a major player in the global technology market, known for its innovation and extensive research and development efforts.
Application
The K4B2G1646F-BMMA is a 2GB DDR3 SDRAM memory chip commonly used in various applications, including smartphones, tablets, laptops, and other consumer electronics. Its high-speed data transfer capabilities make it suitable for computing tasks, gaming devices, and embedded systems. Additionally, it is used in networking equipment and automotive electronics where reliable memory performance is critical.
Equivalent
The K4B2G1646F-BMMA is a 2GB DDR3 SDRAM chip. Equivalent products include:
1. K4B2G1646F-BMMA (Samsung)
2. MT8JTF51264HZ-1G6E1 (Micron)
3. H5TQ2G83AFR (Hynix)
4. IS43TR16640B-125B4 (ISSI)
Ensure compatibility with your specific application and check datasheets for detailed specifications.
1. K4B2G1646F-BMMA (Samsung)
2. MT8JTF51264HZ-1G6E1 (Micron)
3. H5TQ2G83AFR (Hynix)
4. IS43TR16640B-125B4 (ISSI)
Ensure compatibility with your specific application and check datasheets for detailed specifications.
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