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K4B2G1646F-BCNB
1.5V 2Gbit 1.066GHz DDR3 SDRAM FBGA-96 Memory (ICs) RoHS
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規格
| Packaging | FBGA-96 |
| Clock Frequency | 1.066GHz |
| Memory Format | DDR3 SDRAM |
| Memory Size | 2Gbit |
| Operating temperature | 0℃~+85℃ |
| Voltage - Supply | 1.5V |
概述
Description
K4B2G1646F-BCNB is a type of DRAM (Dynamic Random Access Memory) memory chip produced by Samsung. It is typically used in various electronic devices, including smartphones, tablets, and computers, due to its efficiency and speed in data processing. Specifically, K4B2G1646F-BCNB is a 2GB DDR3 SDRAM component, featuring a 64-bit data bus and operating at a voltage of 1.5V. This chip is designed for high-performance applications, providing improved bandwidth and faster data transfer rates compared to older memory technologies. Its compact design allows for integration into space-constrained devices, making it a popular choice in the consumer electronics market. For developers and engineers, understanding the specifications and capabilities of this memory chip is crucial for optimizing device performance and compatibility.
Features
The K4B2G1646F-BCNB is a 2GB DDR3 SDRAM (Synchronous Dynamic Random Access Memory) component, typically used in mobile devices and laptops. Here are its key features:
1. Capacity: 2GB, suitable for applications requiring moderate memory.
2. Type: DDR3 SDRAM, known for higher speed and efficiency compared to DDR2.
3. Speed: Operates at a data rate of up to 1600 MT/s (megatransfers per second).
4. Voltage: Operates at a low voltage of 1.5V, which helps in reducing power consumption.
5. Organization: Organized as 128M x 8 bits, allowing for efficient data handling.
6. Package: Typically comes in an FBGA (Fine Ball Grid Array) package, facilitating compact design.
7. Industrial Grade: Often rated for extended temperature ranges, making it suitable for various environments.
8. Applications: Commonly utilized in smartphones, tablets, and other portable devices.
Overall, the K4B2G1646F-BCNB is designed for performance and efficiency in mobile applications.
1. Capacity: 2GB, suitable for applications requiring moderate memory.
2. Type: DDR3 SDRAM, known for higher speed and efficiency compared to DDR2.
3. Speed: Operates at a data rate of up to 1600 MT/s (megatransfers per second).
4. Voltage: Operates at a low voltage of 1.5V, which helps in reducing power consumption.
5. Organization: Organized as 128M x 8 bits, allowing for efficient data handling.
6. Package: Typically comes in an FBGA (Fine Ball Grid Array) package, facilitating compact design.
7. Industrial Grade: Often rated for extended temperature ranges, making it suitable for various environments.
8. Applications: Commonly utilized in smartphones, tablets, and other portable devices.
Overall, the K4B2G1646F-BCNB is designed for performance and efficiency in mobile applications.
Package
The K4B2G1646F-BCNB is a DRAM memory chip packaged in a 78-ball TFBGA (Thin Fine Ball Grid Array) format. This compact package type is designed for efficient thermal management and space-saving in electronic devices.
Pinout
The K4B2G1646F-BCNB is a 2GB DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) chip. It has a pin count of 78.
This memory device operates at a voltage of 1.5V and supports data rates of up to 1066 MT/s, providing high-speed data access for various applications. The primary functions include serving as a memory module in computers, tablets, and other electronic devices, allowing for data storage and retrieval in dynamic applications.
Features include a double data rate interface, burst lengths of 4 or 8, and compatibility with different memory architectures. Overall, it is designed to enhance performance and efficiency in computing environments.
This memory device operates at a voltage of 1.5V and supports data rates of up to 1066 MT/s, providing high-speed data access for various applications. The primary functions include serving as a memory module in computers, tablets, and other electronic devices, allowing for data storage and retrieval in dynamic applications.
Features include a double data rate interface, burst lengths of 4 or 8, and compatibility with different memory architectures. Overall, it is designed to enhance performance and efficiency in computing environments.
Manufacturer
The manufacturer of the K4B2G1646F-BCNB is Samsung Electronics. Samsung is a South Korean multinational conglomerate, widely recognized as one of the largest technology companies in the world. The company operates in various sectors, including consumer electronics, information technology, and semiconductor manufacturing. Samsung is particularly known for its advanced semiconductor products, including DRAM and NAND flash memory, which are integral to a wide range of electronic devices, from smartphones to computers. The K4B2G1646F-BCNB specifically refers to a 2GB DDR3 DRAM chip, showcasing Samsung's leadership in memory technology and innovation.
Application
The K4B2G1646F-BCNB is a 2GB DDR3 SDRAM memory chip primarily used in applications such as smartphones, tablets, laptops, and other portable electronic devices. It supports high-speed data transfer and is ideal for applications requiring efficient multitasking and enhanced performance in graphics and processing tasks. Additionally, it may be used in gaming consoles and embedded systems that demand reliable memory solutions.
Equivalent
The K4B2G1646F-BCNB is a 2Gb DDR3 SDRAM chip. Equivalent products include the MT8JTF12864AZ-1G6 and HMT112S6BFR8C-G7. Ensure to check specifications like timings and voltage for compatibility.
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