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K4AAG165WA-BIWE

Name: K4AAG165WA-BIWE
Rating: 4.7 (12 reviews)

16Gbit 1.2V DDR4 SDRAM FBGA-96 Memory (ICs) RoHS

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規格

Packaging	FBGA-96
Memory Format	DDR4 SDRAM
Memory Size	16Gbit
Operating temperature	-40℃~+95℃
Voltage - Supply	1.2V

概述

Description

K4AAG165WA-BIWE is a specific model of DRAM (Dynamic Random-Access Memory) module produced by Samsung. It typically features a DDR4 interface, which is commonly used in modern computing devices for its balance of performance and energy efficiency. This memory module is designed for applications requiring high-speed data processing, such as gaming, graphic design, and server operations.
The "K4AAG" designation indicates it is part of Samsung's memory product line, while "165" often refers to the capacity in megabits or specific configurations. "WA-BIWE" may denote manufacturing details or specific features related to the module's design, such as speed, voltage, or thermal characteristics.
For optimal performance, ensure compatibility with your motherboard and consider the required specifications, including clock speed and latency, when integrating it into a system.

Features

The K4AAG165WA-BIWE is a 2GB DDR3 SDRAM memory module produced by Samsung. Key features include:
1. Capacity: 2GB, suitable for enhancing performance in compatible devices.
2. Type: DDR3 SDRAM, which offers improved speed and efficiency over DDR2.
3. Speed: Typically operates at 1600MHz, providing faster data transfer rates.
4. Form Factor: SO-DIMM (Small Outline Dual In-line Memory Module), designed for laptops and compact systems.
5. Voltage: Operates at 1.5V, which is standard for DDR3, ensuring compatibility and energy efficiency.
6. Timing Parameters: Commonly has CAS latency of CL11, affecting responsiveness and speed.
7. Compatibility: Works with various motherboards and systems that support DDR3 memory.
This module is ideal for upgrading existing systems, improving multitasking, and enhancing overall performance in laptops and small form-factor PCs.

Package

The K4AAG165WA-BIWE is a DDR3 SDRAM memory chip packaged in a 78-ball BGA (Ball Grid Array) format. This package type is designed for compact integration on circuit boards, providing efficient thermal and electrical performance.

Pinout

The K4AAG165WA-BIWE is a DRAM component, specifically a 4GB DDR3 SDRAM (Synchronous Dynamic Random Access Memory) device. It features a pin count of 78 pins in a TSOP II (Thin Small Outline Package) configuration.
The primary function of this memory chip is to provide high-speed data storage and retrieval for applications such as computers, mobile devices, and other electronic systems requiring dynamic memory. It operates at a 1.5V supply voltage and supports various data rates, complying with the DDR3 standard, thus ensuring a balance between performance and power efficiency.
This device typically supports functions like row access, column access, and refresh cycles, enabling it to manage data in a structured manner.

Manufacturer

The K4AAG165WA-BIWE is manufactured by Samsung Electronics, a South Korean multinational conglomerate. Samsung Electronics is a leading company in the technology sector, primarily known for its consumer electronics, semiconductors, and telecommunications equipment. It is one of the world's largest manufacturers of memory chips, including DRAM and NAND flash memory, which are used in various devices ranging from smartphones to computers. The company is also recognized for its innovation in display technology, particularly with its OLED and QLED screens, as well as its extensive range of home appliances and digital media products. Founded in 1969, Samsung Electronics operates globally, continually advancing in research and development to maintain a competitive edge in the fast-evolving tech industry.

Application

The K4AAG165WA-BIWE is a DDR3 SDRAM memory chip, primarily used in applications such as mobile devices, smartphones, tablets, and other portable electronics. It supports high-speed data processing and is suitable for multitasking environments, making it ideal for gaming devices, digital cameras, and multimedia applications where efficient memory performance is essential.

Equivalent

The K4AAG165WA-BIWE chip, a 1GB DDR3 SDRAM, can be equated to similar DDR3 memory chips like Hynix H5TQ1G83EFR, Micron MT41K1G8, and Samsung K4B4G1646E. Always check specifications for compatibility, such as speed, voltage, and package type, before replacement.