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K4A8G165WC-BIWE
8Gbit 1.2V 1.6GHz DDR4 SDRAM FBGA-96 Memory (ICs) RoHS
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規格
| Packaging | FBGA-96 |
| Clock Frequency | 1.6GHz |
| Memory Format | DDR4 SDRAM |
| Memory Size | 8Gbit |
| Operating temperature | -40℃~+95℃ |
| Voltage - Supply | 1.2V |
概述
Description
The K4A8G165WC-BIWE is a DRAM memory chip produced by Samsung. It is part of their LPDDR4 (Low Power Double Data Rate 4) series, which is designed to provide high-speed data processing with reduced power consumption, making it ideal for use in mobile devices such as smartphones and tablets.
This particular model offers an 8 Gb (gigabit) density, organized in a configuration of 16 bits per data pin. It operates at a core voltage of 1.1 V, which contributes to its energy efficiency. The chip supports a data rate of up to 3200 Mbps (megabits per second), enabling fast and efficient data handling suitable for high-performance applications.
The K4A8G165WC-BIWE's compact design and advanced features make it suitable for space-constrained environments, providing a good balance between performance, power efficiency, and size. This memory chip is commonly used in modern electronic devices, supporting high-resolution displays, advanced graphics, and multitasking capabilities due to its enhanced bandwidth and speed.
This particular model offers an 8 Gb (gigabit) density, organized in a configuration of 16 bits per data pin. It operates at a core voltage of 1.1 V, which contributes to its energy efficiency. The chip supports a data rate of up to 3200 Mbps (megabits per second), enabling fast and efficient data handling suitable for high-performance applications.
The K4A8G165WC-BIWE's compact design and advanced features make it suitable for space-constrained environments, providing a good balance between performance, power efficiency, and size. This memory chip is commonly used in modern electronic devices, supporting high-resolution displays, advanced graphics, and multitasking capabilities due to its enhanced bandwidth and speed.
Features
The K4A8G165WC-BIWE is a DRAM memory chip, specifically an 8Gb (gigabit) LPDDR4 (Low Power Double Data Rate 4) SDRAM, manufactured by Samsung. Here are some of its key features:
1. Capacity: 8Gb, which can be configured in different ways depending on the application requirements.
2. Speed and Performance: Designed to operate at a high-speed data rate of up to 4266 megatransfers per second (MT/s), offering efficient data handling for mobile and embedded applications.
3. Power Efficiency: As an LPDDR4 chip, it emphasizes low power consumption, which is ideal for mobile devices like smartphones and tablets where battery life is crucial.
4. Interface: Uses a double data rate (DDR) interface, enabling higher bandwidth by transferring data on both the rising and falling edges of the clock signal.
5. Package: Typically comes in a compact package suitable for devices with limited space.
6. Temperature Range: Designed to operate efficiently within a wide temperature range, suitable for various environmental conditions.
These features make it well-suited for modern, high-performance mobile devices requiring energy efficiency and high-speed memory solutions.
1. Capacity: 8Gb, which can be configured in different ways depending on the application requirements.
2. Speed and Performance: Designed to operate at a high-speed data rate of up to 4266 megatransfers per second (MT/s), offering efficient data handling for mobile and embedded applications.
3. Power Efficiency: As an LPDDR4 chip, it emphasizes low power consumption, which is ideal for mobile devices like smartphones and tablets where battery life is crucial.
4. Interface: Uses a double data rate (DDR) interface, enabling higher bandwidth by transferring data on both the rising and falling edges of the clock signal.
5. Package: Typically comes in a compact package suitable for devices with limited space.
6. Temperature Range: Designed to operate efficiently within a wide temperature range, suitable for various environmental conditions.
These features make it well-suited for modern, high-performance mobile devices requiring energy efficiency and high-speed memory solutions.
Package
The K4A8G165WC-BIWE is a DRAM memory chip from Samsung. It typically comes in a FBGA (Fine-Pitch Ball Grid Array) package, which is common for such components due to its compact size and efficient heat dissipation.
Pinout
The K4A8G165WC-BIWE is a DRAM chip produced by Samsung and is part of their LPDDR4 (Low Power Double Data Rate 4) memory lineup. This specific model typically comes in a 178-ball FBGA (Fine-Pitch Ball Grid Array) package. The "8G" in its specification indicates that it has a capacity of 8 Gb (gigabits).
As an LPDDR4 memory chip, the K4A8G165WC-BIWE is designed to provide high-speed data transfer while consuming low power, making it suitable for use in mobile devices such as smartphones and tablets. It supports a wide range of functions including high-speed read and write operations, power-saving features like deep power down mode, and various self-refresh functions to ensure data integrity even with reduced power usage. The chip operates at a supply voltage range typically around 1.1V for the core and 1.8V for I/O, which contributes to its low power consumption characteristics.
As an LPDDR4 memory chip, the K4A8G165WC-BIWE is designed to provide high-speed data transfer while consuming low power, making it suitable for use in mobile devices such as smartphones and tablets. It supports a wide range of functions including high-speed read and write operations, power-saving features like deep power down mode, and various self-refresh functions to ensure data integrity even with reduced power usage. The chip operates at a supply voltage range typically around 1.1V for the core and 1.8V for I/O, which contributes to its low power consumption characteristics.
Manufacturer
The K4A8G165WC-BIWE is a DRAM chip manufactured by Samsung Electronics. Samsung Electronics is a South Korean multinational company that is part of the larger Samsung Group. It is one of the world's leading technology companies and is well-known for its diverse range of products and services, including semiconductors, consumer electronics, telecommunications equipment, and home appliances. Samsung is a major player in the semiconductor industry, producing memory chips, system LSI, and foundry services, and it is recognized for its significant contributions to advancements in technology and electronics.
Application
The K4A8G165WC-BIWE is a DRAM chip, typically used in high-performance computing and electronic devices. Its application areas include smartphones, tablets, and other mobile devices, where efficient memory performance is crucial. It is also used in servers and networking equipment, helping manage large volumes of data with speed and efficiency. Additionally, it supports applications in gaming consoles and automotive systems, contributing to enhanced processing power and data handling capabilities.
Equivalent
The K4A8G165WC-BIWE is an 8Gb LPDDR4 DRAM chip from Samsung. Equivalent products typically include LPDDR4 DRAM chips with similar specifications from other manufacturers, such as:
1. Micron MT53B512M32D2NP
2. SK Hynix H9HCNNNBKUMLHR-NEE
3. Kingston D5128AKMDXGJDQ
These chips generally have compatible form factors, voltages, and capacities suitable for similar applications. Always verify specific requirements and compatibility.
1. Micron MT53B512M32D2NP
2. SK Hynix H9HCNNNBKUMLHR-NEE
3. Kingston D5128AKMDXGJDQ
These chips generally have compatible form factors, voltages, and capacities suitable for similar applications. Always verify specific requirements and compatibility.
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