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K4A8G165WB-BCRC
8Gbit 1.14V~1.26V 1.333GHz DDR4 SDRAM FBGA-96 Memory (ICs) RoHS
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規格
| Packaging | FBGA-96 |
| Clock Frequency | 1.333GHz |
| Current - Supply | 41.9mA |
| Memory Format | DDR4 SDRAM |
| Memory Size | 8Gbit |
| Operating temperature | -40℃~+95℃ |
| Voltage - Supply | 1.14V~1.26V |
概述
Description
The K4A8G165WB-BCRC is a high-performance DRAM (Dynamic Random Access Memory) chip manufactured by Samsung. It features 8 gigabits (1 GB) of memory capacity organized in a quad-level cell (QLC) architecture, which enhances data storage efficiency. The chip operates at a voltage of 1.8V and supports data rates up to DDR4-2400, making it suitable for various applications, including smartphones, tablets, and other mobile devices.
With its advanced manufacturing process and optimized power consumption, the K4A8G165WB-BCRC is designed for high-speed data transfer and reliable performance. It also incorporates features like on-die termination and various power-saving modes, contributing to improved overall energy efficiency. This DRAM component is ideal for modern computing requirements, balancing speed and capacity while adhering to industry standards.
With its advanced manufacturing process and optimized power consumption, the K4A8G165WB-BCRC is designed for high-speed data transfer and reliable performance. It also incorporates features like on-die termination and various power-saving modes, contributing to improved overall energy efficiency. This DRAM component is ideal for modern computing requirements, balancing speed and capacity while adhering to industry standards.
Features
The K4A8G165WB-BCRC is a DRAM (Dynamic Random Access Memory) chip manufactured by Samsung, part of the DDR3 SDRAM (Double Data Rate 3 Synchronous Dynamic Random Access Memory) family. Key features include:
1. Capacity: 8 GB (Gigabytes) per module.
2. Speed: Operates at a data rate of 1600 MT/s (Megatransfers per second).
3. Interface: Utilizes a 64-bit interface, suitable for desktops and laptops.
4. Voltage: It operates at a low voltage of 1.5V, enhancing energy efficiency.
5. Configuration: It is organized in 1024M x 64 bits.
6. Package: Typically comes in a FBGA (Fine Ball Grid Array) package, facilitating compact designs.
7. ECC Support: May support ECC (Error-Correcting Code) for improved data integrity in certain applications.
This module is commonly used in various computing devices, offering a good balance of performance and energy efficiency.
1. Capacity: 8 GB (Gigabytes) per module.
2. Speed: Operates at a data rate of 1600 MT/s (Megatransfers per second).
3. Interface: Utilizes a 64-bit interface, suitable for desktops and laptops.
4. Voltage: It operates at a low voltage of 1.5V, enhancing energy efficiency.
5. Configuration: It is organized in 1024M x 64 bits.
6. Package: Typically comes in a FBGA (Fine Ball Grid Array) package, facilitating compact designs.
7. ECC Support: May support ECC (Error-Correcting Code) for improved data integrity in certain applications.
This module is commonly used in various computing devices, offering a good balance of performance and energy efficiency.
Package
The K4A8G165WB-BCRC is a DDR4 SDRAM memory chip packaged in a 78-ball FBGA (Fine Ball Grid Array) package.
Pinout
The K4A8G165WB-BCRC is a DRAM memory chip produced by Samsung, specifically a 4Gb (gigabit) DDR4 SDRAM (Dynamic Random Access Memory) device. It comes in a 78-ball FBGA (Fine Ball Grid Array) package.
The pin count is 78 balls, and each ball has specific functions such as data, address, control signals, power supply, and grounding. The primary function is to provide fast and efficient memory access for computing applications. It supports high-speed data transfer rates, typically around 2400 MT/s (megatransfers per second) and is designed for use in various applications, including servers, desktops, and laptops.
For specific pin assignments and detailed functions, refer to the component's datasheet provided by the manufacturer.
The pin count is 78 balls, and each ball has specific functions such as data, address, control signals, power supply, and grounding. The primary function is to provide fast and efficient memory access for computing applications. It supports high-speed data transfer rates, typically around 2400 MT/s (megatransfers per second) and is designed for use in various applications, including servers, desktops, and laptops.
For specific pin assignments and detailed functions, refer to the component's datasheet provided by the manufacturer.
Manufacturer
The K4A8G165WB-BCRC is manufactured by Samsung Electronics, a South Korean multinational conglomerate. Samsung is primarily known for its electronics, particularly semiconductors, smartphones, televisions, and home appliances. The company is a leading global provider of memory chips, including DRAM and NAND flash memory, which are key components in various electronic devices. Samsung's semiconductor division is one of the largest in the world, contributing significantly to the company's revenue and innovation in the technology sector.
Application
The K4A8G165WB-BCRC is a 2GB DDR3 SDRAM memory chip mainly used in applications such as smartphones, tablets, and other portable devices. It is also suitable for laptops, embedded systems, gaming consoles, and various consumer electronics requiring efficient memory solutions for multitasking and high-performance computing.
Equivalent
The K4A8G165WB-BCRC chip is a 2GB DDR3 SDRAM memory chip. Equivalent products include the Samsung K4A8G165WB-BCRC, Micron MT8JTF12864HZ-1G6E1, Hynix H5TQ2G83AFR, and Nanya NT5CB256M16DP-DI. Always verify specifications and compatibility for your specific application.
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