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K4A4G165WE-BCTD

Name: K4A4G165WE-BCTD
Rating: 4.7 (12 reviews)

1.2V 4Gbit 256Mx16 DDR4 FBGA-96 Memory (ICs) RoHS

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規格

Packaging	FBGA-96
Interface	DDR4
Memory Format	256Mx16
Memory Size	4Gbit
Operating temperature	0℃~+85℃
Voltage - Supply	1.2V

概述

Description

The K4A4G165WE-BCTD is a type of DRAM (Dynamic Random-Access Memory) developed by Samsung, typically used in various electronic devices, including smartphones, tablets, and computers. It is part of the LPDDR4 (Low Power Double Data Rate 4) family, which provides high-speed data transfer rates and improved energy efficiency compared to previous generations.
The specifications of the K4A4G165WE-BCTD include a capacity of 4 GB and a data rate of up to 3200 MT/s (megatransfers per second). Its low power consumption makes it ideal for mobile applications where battery life is crucial. The package type is usually a small form factor, contributing to compact device design.
In summary, the K4A4G165WE-BCTD is a versatile, efficient memory solution suited for high-performance mobile and embedded applications.

Features

The K4A4G165WE-BCTD is a 4GB DDR3 SDRAM memory chip manufactured by Samsung. Here are its key features:
1. Capacity: 4GB (Gigabytes).
2. Type: DDR3 (Double Data Rate 3) SDRAM.
3. Speed: Operates at a data rate of 1600 MT/s (megatransfers per second).
4. Memory Configuration: It is organized as 512M x 32 bits, suitable for various applications requiring high bandwidth.
5. Voltage: Operates at a standard voltage of 1.5V.
6. Package: Available in a compact FBGA (Fine Ball Grid Array) package, ensuring efficient space utilization on PCBs.
7. Applications: Commonly used in laptops, desktops, and other devices requiring reliable memory performance.
This memory chip is designed to enhance system responsiveness and support multitasking efficiently in compatible devices.

Package

The K4A4G165WE-BCTD is a DRAM chip packaged in a 96-ball FBGA (Fine Pitch Ball Grid Array) format. This type of package allows for efficient space utilization and thermal performance in electronic devices.

Pinout

The K4A4G165WE-BCTD is a 4 Gb DDR3 SDRAM memory chip, organized as 512M x 32 bits. It comes in a 78-ball FBGA (Fine Ball Grid Array) package. The pin count is 78.
The primary functions of the pins include:
1. Data Pins (DQ): 32 data I/O pins for data transfer.
2. Address Pins (A): Used to select memory locations.
3. Control Pins (BA, CS, RAS, CAS, WE): Manage read/write operations and control the memory state.
4. Clock Pins (CLK, CK, CK#): Synchronize data transfer and control signals.
5. Power Pins (VDD, VSS): Provide power to the chip.
6. Reset Pin (RESET): Used for initializing the device.
This layout supports high-speed operations and enhances memory performance in various applications, including computing and mobile devices.

Manufacturer

The K4A4G165WE-BCTD is manufactured by Samsung Electronics. Samsung is a South Korean multinational conglomerate known primarily for its electronics products, including semiconductors, consumer electronics, and telecommunications equipment. The company is one of the largest manufacturers of memory chips in the world, producing a wide range of memory products such as DRAM and NAND flash memory. Samsung's semiconductor division is a key player in the global market, supplying components to various industries, including smartphones, computers, and automotive electronics.

Application

The K4A4G165WE-BCTD is a 4GB DDR4 SDRAM memory chip primarily used in applications such as smartphones, tablets, laptops, and other consumer electronics. It is also suitable for use in embedded systems, automotive applications, and industrial devices, where high-speed data processing and efficient power consumption are essential.

Equivalent

The K4A4G165WE-BCTD chip is a 4GB DDR4 SDRAM. Equivalent products include:
1. Hynix H5AN4G6NBFR-UR
2. Micron MT40A1G8SD-075E
3. Samsung K4A4G165WE-BCTD (same part number)
4. Crucial CT4G4DFS824A
Always verify compatibility with your specific application or motherboard.