JS28F512M29EWHA

圖片僅供參考

JS28F512M29EWHA

IC FLASH 512MBIT PARALLEL 56TSOP

  • 製造商
  • 製造商。 部分 #JS28F512M29EWHA
  • 包
  • 資料表
  • 有現貨的6499

100%原創; 新

24小時準備發貨

365天保修

RFQ&; 獲得更多折扣

規格

Part Status Obsolete
Base Product Number JS28F512M29
DigiKey Programmable Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 512Mbit
Memory Organization 64M x 8, 32M x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 110ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 56-TSOP
Packaging Tray
Access Time 110 ns

概述

Description

The JS28F512M29EWHA is a 512Mb (64MB) NAND Flash memory chip developed by Micron Technology. It utilizes a multi-level cell (MLC) architecture, allowing it to store multiple bits per cell, which enhances storage density. This chip is typically used in applications requiring substantial data storage, such as mobile devices, consumer electronics, and embedded systems.
Key features include support for a range of interfaces (e.g., ONFI), high-speed read and write operations, and advanced error correction capabilities, which improve data integrity and performance. The JS28F512M29EWHA is designed for reliability, with mechanisms for wear leveling and bad block management, which extend the lifespan of the memory.
This NAND Flash memory is ideal for applications where space and performance are critical, making it a popular choice among manufacturers seeking efficient storage solutions.

Features

The JS28F512M29EWHA is a NAND Flash memory device featuring the following key specifications:
1. Density: 512Mb (64MB) storage capacity.
2. Interface: Supports a parallel interface, making it compatible with various microcontrollers and processors.
3. Organization: It is organized as 64 pages of 8 bytes each, allowing for efficient data management and retrieval.
4. Access Time: Offers fast access times, ensuring quick read and write operations.
5. Endurance: Designed for high endurance, typically supporting a large number of program and erase cycles.
6. Data Retention: Provides robust data retention capabilities, ensuring stored data remains intact over time.
7. Low Power Consumption: Optimized for low power usage, making it suitable for battery-operated devices.
8. Reliability: Features built-in error correction mechanisms to enhance data integrity and reliability.
This device is commonly used in applications such as mobile phones, consumer electronics, and embedded systems where compact and efficient storage is required.

Package

The JS28F512M29EWHA is a NAND flash memory device packaged in a TSOP (Thin Small Outline Package) format. This package type is designed for surface mounting and offers a compact footprint suitable for space-constrained applications in consumer electronics and embedded systems.

Manufacturer

The manufacturer of the JS28F512M29EWHA is Intel Corporation. Intel is a multinational technology company primarily known for designing and manufacturing semiconductor products, particularly microprocessors for computer systems. Founded in 1968, Intel is a leading player in the semiconductor industry and is pivotal in the development of microchips for personal computers, servers, and various electronic devices. The company also engages in research and development of technologies related to artificial intelligence, cloud computing, and the Internet of Things (IoT). Intel's extensive portfolio includes memory products, such as flash memory, and it plays a crucial role in advancing computing technologies globally.

Application

The JS28F512M29EWHA is a NAND flash memory device commonly used in applications such as mobile devices, consumer electronics, automotive systems, industrial automation, and embedded systems. Its high density and performance make it suitable for data storage in smartphones, tablets, digital cameras, and solid-state drives (SSDs), enabling fast data access and reliable storage solutions.

Equivalent

The JS28F512M29EWHA chip is a 512Mb NAND flash memory. Equivalent products include:
1. Micron MT29F512G08
2. Samsung K9F2G08U0M
3. Hynix H27UAG8T2BTR
4. Toshiba TH58NVG5D2FL
5. Winbond W29N512G
Always verify specific features and compatibility before substitution.

船舶

運輸管道我們

通過DHL、FedEx、TNT、UPS或您選擇的任何其他貨運代理提供全球運輸服務。


運費參攷(DHL/FedEx):

動態主要裝載: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為2-5個工作日。

聯邦快遞: 運費從25美元到40美元(0.5公斤)不等,預計交貨時間為3-7個工作日。

不斷電供應系統: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為3-7個工作日。

三硝基甲苯: 運費從25美元到65美元(0.5公斤)不等,預計交貨時間為3-7個工作日。

增强型短消息: 運費從30美元到50美元(0.5公斤)不等,預計交貨時間為7-15個工作日。

掛號: 運費為2-4美元(0.1公斤),預計交貨時間為5-20個工作日。

支付

Payment Methods

付款條件為100%預付。

現時,我們只接受以下付款方式:

1. 貝寶

2. 信用卡/借記卡

3. 電匯