圖片僅供參考

JS28F128J3F75A

Name: JS28F128J3F75A
Rating: 4.7 (12 reviews)

IC FLASH 128MBIT PARALLEL 56TSOP

製造商
製造商。部分 #JS28F128J3F75A
包
資料表 JS28F128J3F75A DataSheet
有現貨的7359

+BOM RFQ

100%原創；新

24小時準備發貨

365天保修

RFQ&；獲得更多折扣

規格

Series	StrataFlash™
Part Status	Obsolete
Base Product Number	JS28F128J3
DigiKey Programmable	Verified
Memory Type	Non-Volatile
Memory Format	FLASH
Technology	FLASH - NOR
Memory Size	128Mbit
Memory Organization	16M x 8, 8M x 16
Memory Interface	Parallel
Write Cycle Time - Word, Page	75ns
Voltage - Supply	2.7V ~ 3.6V
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount
Package	56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package	56-TSOP
Packaging	Tray
Access Time	75 ns

概述

Description

The JS28F128J3F75A is a NAND flash memory chip produced by Intel, designed for various applications requiring non-volatile storage. It features a density of 128 megabits (16 megabytes) and operates with a dual input/output interface (DIO) for improved data transfer rates. The device supports asynchronous and synchronous operations, making it versatile for different system designs.
Key characteristics include a voltage range compatible with most digital systems, low power consumption for extended battery life, and robust data retention capabilities. It is often used in consumer electronics, automotive applications, and embedded systems, where reliable and fast data access is crucial.
The chip is organized in a page structure, allowing for efficient read and write operations, and includes built-in wear leveling to enhance longevity. Overall, the JS28F128J3F75A is a reliable choice for applications that demand high performance and data integrity in non-volatile memory solutions.

Features

The JS28F128J3F75A is a NAND Flash memory device with several notable features:
1. Capacity: It has a storage capacity of 128 Megabits (16 Megabytes).
2. Interface: Utilizes a parallel interface for data communication, making it compatible with various microcontrollers and processors.
3. Speed: Offers fast read and write speeds, with a typical read latency of around 25 microseconds.
4. Endurance: Designed for high endurance, capable of withstanding a significant number of write and erase cycles, often exceeding 10,000 cycles.
5. Voltage Range: Operates at a supply voltage typically between 2.7V to 3.6V, suitable for battery-powered applications.
6. Data Integrity: Equipped with built-in error correction mechanisms to enhance data integrity.
7. Package Options: Available in multiple package types, including TSOP and BGA, for flexible integration into different systems.
These features make the JS28F128J3F75A suitable for various applications, including consumer electronics, automotive, and industrial devices.

Package

The JS28F128J3F75A is typically packaged in a TSOP (Thin Small Outline Package) form factor. This package type is designed for surface mounting on PCBs and is commonly used in memory devices for its space efficiency.

Pinout

The JS28F128J3F75A is a NAND flash memory device with a pin count of 48. It is designed for high-density storage applications and provides a parallel interface for data transfer. The primary functions of the pins include data input/output, address input, control signals, and power supply connections.
Key pins include:
- Data Pins (DQ0-DQ7): For data input and output.
- Address Pins (A0-A21): To select specific memory addresses.
- Control Pins: Such as CE# (Chip Enable), WE# (Write Enable), RE# (Read Enable), and R/B# (Ready/Busy) for managing operations.
- Power Supply Pins: VCC for power and VSS for ground.
The device supports various operations like read, program, erase, and has features for wear leveling and error correction, making it suitable for applications in consumer electronics, automotive, and industrial sectors.

Manufacturer

The JS28F128J3F75A is manufactured by Intel Corporation. Intel is a multinational technology company headquartered in Santa Clara, California. It is best known for its semiconductor products, particularly microprocessors for computers and servers. Founded in 1968, Intel is a leader in innovation, developing advanced technologies that power a wide range of devices, from personal computers to data centers and Internet of Things (IoT) applications. The JS28F128J3F75A is a flash memory device, specifically designed for embedded systems, showcasing Intel's expertise in memory solutions as part of its broader portfolio in computing technology.

Application

The JS28F128J3F75A is a NAND flash memory device commonly used in applications such as mobile devices, consumer electronics, embedded systems, and automotive electronics. It serves as non-volatile storage for firmware, software, and data, enabling fast access and reliable performance in applications requiring high-density storage solutions.

Equivalent

The JS28F128J3F75A chip is a NAND Flash memory device. Equivalent products include the Micron MT29F128G08CFAAA, Samsung K9F2G08U0M, and the Intel 28F128J3D75. Always verify specifications like density, packaging, and voltage to ensure compatibility.