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JAN2N2945A
TRANS PNP 20V 0.1A TO46
- 製造商
- 製造商。 部分 #JAN2N2945A
- 包 TO-206AB, TO-46-3 Metal Can
- 資料表
- 有現貨的5344
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規格
| Supplier | Microchip Technology |
| Package | Bulk |
| Series | Military, MIL-PRF-19500/382 |
| ProductStatus | Active |
| TransistorType | PNP |
| Current-Collector(Ic)(Max) | 100 mA |
| Voltage-CollectorEmitterBreakdown(Max) | 20 V |
| Current-CollectorCutoff(Max) | 10µA (ICBO) |
| DCCurrentGain(hFE)(Min)@IcVce | 70 @ 1mA, 500mV |
| Power-Max | 400 mW |
| OperatingTemperature | -65°C ~ 200°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-206AB, TO-46-3 Metal Can |
概述
Description
JAN2N2945A is the military-spec (JAN) version of the 2N2945A bipolar junction transistor (BJT). The “JAN” prefix means it meets military specifications and screening; the “A” suffix denotes a grade. It’s part of the 2N2944/2945 high‑voltage, general‑purpose BJT family, used as a switch or small‑signal amplifier in vintage and mil‑spec gear. Because JAN parts were made by multiple vendors over many years, exact ratings (Vce, Ic, gain), packaging (TO-5/TO-18 metal can or plastic), and pinout vary by lot. To use it safely, identify the specific datasheet for your device’s package and lot, follow correct biasing and heat sinking, and verify compatibility if sourcing NOS. If you share the package type or vendor, I can provide precise pinout and electrical specs.
Features
JAN2N2945A features (typical, vendor varies):
- NPN silicon transistor
- High-voltage switching/transistor device (Vceo in the hundreds of volts range)
- Collector current typically up to about 1 A
- Gain (hFE) varies widely with operating point (roughly 20–160)
- Fast switching suitable for switching regulators and high-voltage circuits
- Through-hole package (commonly TO-92 or equivalent)
- Complement to 2N2944 (used in push-pull/high-voltage stages)
- Often marked under JAN (Japanese/industrial/military grading); exact specs depend on manufacturer
Note: Always consult the specific datasheet for exact Vceo, Ic, hFE, and package details for the JAN2N2945A you’re using.
- NPN silicon transistor
- High-voltage switching/transistor device (Vceo in the hundreds of volts range)
- Collector current typically up to about 1 A
- Gain (hFE) varies widely with operating point (roughly 20–160)
- Fast switching suitable for switching regulators and high-voltage circuits
- Through-hole package (commonly TO-92 or equivalent)
- Complement to 2N2944 (used in push-pull/high-voltage stages)
- Often marked under JAN (Japanese/industrial/military grading); exact specs depend on manufacturer
Note: Always consult the specific datasheet for exact Vceo, Ic, hFE, and package details for the JAN2N2945A you’re using.
Package
JAN2N2945A is the military (JAN) version of the 2N2945A and is supplied in a TO-3 metal-can power-transistor package.
Pinout
JAN2N2945A is the military (JAN) version of the 2N2945A — a three-terminal (3-pin) PNP silicon power transistor. Its pins are emitter, base and collector, and it is used for power switching and linear amplification. (For exact pin order and package details consult the device datasheet.)
Manufacturer
There isn’t a single fixed manufacturer for JAN2N2945A. The JAN prefix indicates a military-spec (Joint Army/Navy) device, and the 2N2945A has been manufactured over the years by several vendors under MIL specifications (e.g., Fairchild, Texas Instruments, Motorola, Sylvania, etc.). So the “manufacturer” can vary by lot. In general, JAN2N2945A is a discrete semiconductor transistor produced by semiconductor companies, i.e., military/defense contractors that make discrete transistors.
Application
JAN2N2945A is the military-grade version of the 2N2945 high-voltage transistor. It is used as a general-purpose, high-voltage switching and amplification device in rugged MIL-SPEC equipment. Typical applications include pulse and switching circuits, linear amplification stages, power supplies, RF preamps, and instrumentation where reliability and high-voltage handling are required.
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