IXTA3N150HV

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IXTA3N150HV

MOSFET N-CH 1500V 3A TO263

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規格

Package Tube
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 1500 V
Current-ContinuousDrain(Id)@25°C 3A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 7.3Ohm @ 1.5A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 38.6 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 1375 pF @ 25 V
PowerDissipation(Max) 250W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage TO-263AA

概述

Description

IXTA3N150HV is a high-voltage, high-speed IGBT (Insulated Gate Bipolar Transistor) module designed for efficient power switching applications. Operating at a voltage rating of 1500V, it is suitable for various industrial applications, including renewable energy systems, motor drives, and power converters. The module features low conduction and switching losses, making it ideal for high-efficiency designs.
Its robust construction allows for reliable performance in demanding environments, while its low thermal resistance facilitates effective heat dissipation. IXTA3N150HV is optimized for high-frequency operations, enhancing system responsiveness and performance.
Overall, this IGBT module is a vital component for engineers looking to improve the efficiency and reliability of power electronics systems.

Features

The Ixta3n150HV is a high-voltage, advanced electronic component designed for efficient power management and conversion. Key features include:
1. High Voltage Capability: Supports voltages up to 150V, making it suitable for applications in high-voltage systems.
2. Compact Design: Offers a small footprint, enabling integration into space-constrained environments.
3. Enhanced Efficiency: Provides high conversion efficiency, reducing energy loss in power applications.
4. Thermal Management: Equipped with features to handle elevated temperatures, ensuring reliable operation.
5. Versatile Applications: Ideal for use in renewable energy systems, industrial power supplies, and electric vehicles.
6. Robust Protection Features: Includes over-voltage, over-current, and thermal protection to safeguard the device and connected systems.
7. User-Friendly Interface: Facilitates easy integration and operation within existing systems.
These features make the Ixta3n150HV a reliable choice for modern high-voltage applications requiring efficiency and durability.

Package

The IXTA3N150HV is available in a TO-220 package type. This package is designed for high-voltage applications, providing efficient thermal management and ease of mounting in electronic circuits.

Manufacturer

The IXTA3N150HV is manufactured by IXYS Corporation, which is a subsidiary of Littelfuse, Inc. IXYS specializes in power semiconductor products, including high voltage and high current devices such as IGBTs, MOSFETs, and diodes. The company is known for its expertise in power management and control applications, serving various sectors such as industrial, automotive, telecommunications, and renewable energy. IXYS combines advanced semiconductor technology with innovative packaging and thermal management solutions to deliver reliable and efficient products for demanding applications.

Application

The IXTA3N150HV is a high-voltage, high-performance IGBT (Insulated Gate Bipolar Transistor) used in various applications, including industrial drives, renewable energy systems (like solar inverters), motor control, and power supplies. Its capability to handle high voltage and current makes it suitable for electric vehicles, traction systems, and UPS (Uninterruptible Power Supply) systems, contributing to efficient power conversion and management.

Equivalent

The IXTA3N150HV chip is a high-voltage, 150V N-channel MOSFET. Equivalent alternatives include the STMicroelectronics STP3N150, ON Semiconductor NTP3R150, and Infineon IRF540. Always verify specifications like voltage, current rating, and thermal performance before substitution to ensure compatibility with your application.

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