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IXFP4N85X
MOSFET N-CH 850V 3.5A TO220AB
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規格
| Series | HiPerFET™, Ultra X |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 850 V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 2A, 10V |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 247 pF @ 25 V |
| Power Dissipation (Max) | 150W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB (IXFP) |
| Package / Case | TO-220-3 |
| Base Product Number | IXFP4N85 |
概述
Description
The IXFP4N85X is a type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications. Manufactured by IXYS Corporation, this component is part of the company’s extensive line of power semiconductors. The IXFP4N85X is specifically noted for its high voltage rating, typically in the range of 850V, and is suitable for handling currents around 4A.
This MOSFET is utilized in various applications, including power conversion, motor control, and other high-efficiency electrical systems. It features a low on-state resistance, which minimizes power losses during operation, enhancing overall system efficiency. Additionally, its robust construction allows for reliable operation under demanding conditions, making it an optimal choice for both commercial and industrial settings.
The IXFP4N85X is valued for its fast switching capabilities, contributing to reduced energy consumption and improved performance in electronic circuits. With its combination of high voltage handling and efficient operation, it is a versatile component in the design of modern electronic power systems.
This MOSFET is utilized in various applications, including power conversion, motor control, and other high-efficiency electrical systems. It features a low on-state resistance, which minimizes power losses during operation, enhancing overall system efficiency. Additionally, its robust construction allows for reliable operation under demanding conditions, making it an optimal choice for both commercial and industrial settings.
The IXFP4N85X is valued for its fast switching capabilities, contributing to reduced energy consumption and improved performance in electronic circuits. With its combination of high voltage handling and efficient operation, it is a versatile component in the design of modern electronic power systems.
Features
The IXFP4N85X is a high-voltage power MOSFET, typically used in applications requiring efficient power switching. Key features include:
1. Voltage and Current Ratings: It can handle a maximum drain-source voltage (V_ds) of 850V and typically supports a continuous drain current (I_d) of around 4A, making it suitable for high-voltage applications.
2. R_ds(on): The device has a low on-resistance, which helps minimize power loss during operation, thereby increasing efficiency.
3. Fast Switching: It offers fast switching speeds, which are essential for high-frequency applications, reducing switching losses.
4. Thermal Performance: The MOSFET is designed to efficiently dissipate heat, often featuring a thermal resistance junction-to-case (R_θJC) that ensures reliable operation under varying temperature conditions.
5. Package Type: It is commonly available in TO-220 or TO-263 packages, providing ease of mounting and compatibility with heat sinks for enhanced thermal management.
6. Applications: This MOSFET is often used in power supply systems, motor drives, lighting, and other industrial applications requiring high efficiency and reliability.
These features make the IXFP4N85X ideal for applications where high voltage, efficiency, and fast switching are crucial.
1. Voltage and Current Ratings: It can handle a maximum drain-source voltage (V_ds) of 850V and typically supports a continuous drain current (I_d) of around 4A, making it suitable for high-voltage applications.
2. R_ds(on): The device has a low on-resistance, which helps minimize power loss during operation, thereby increasing efficiency.
3. Fast Switching: It offers fast switching speeds, which are essential for high-frequency applications, reducing switching losses.
4. Thermal Performance: The MOSFET is designed to efficiently dissipate heat, often featuring a thermal resistance junction-to-case (R_θJC) that ensures reliable operation under varying temperature conditions.
5. Package Type: It is commonly available in TO-220 or TO-263 packages, providing ease of mounting and compatibility with heat sinks for enhanced thermal management.
6. Applications: This MOSFET is often used in power supply systems, motor drives, lighting, and other industrial applications requiring high efficiency and reliability.
These features make the IXFP4N85X ideal for applications where high voltage, efficiency, and fast switching are crucial.
Package
The IXFP4N85X is a MOSFET, and its package type is TO-220 FullPAK. This package style provides insulation and is designed for easy mounting on heatsinks, suitable for power electronics applications.
Pinout
The IXFP4N85X is an N-channel MOSFET. It typically comes in a TO-220 or similar package with a standard pin configuration for such transistors. The pin count for this type of package is usually three:
1. Gate (G): This pin is used to control the MOSFET's switching operation. A voltage applied to the gate controls the current flow between the drain and source.
2. Drain (D): This is the terminal through which the main current flows from the circuit into the MOSFET when it is turned on.
3. Source (S): This is the terminal through which the current exits the MOSFET and returns to the circuit.
The IXFP4N85X is designed for high-voltage applications, typically offering a drain-source voltage (Vds) rating of 850V and a continuous drain current (Id) of around 4A. It is used in various power electronics applications, including power supplies, converters, and motor control, due to its capability to handle high voltage and current levels efficiently.
1. Gate (G): This pin is used to control the MOSFET's switching operation. A voltage applied to the gate controls the current flow between the drain and source.
2. Drain (D): This is the terminal through which the main current flows from the circuit into the MOSFET when it is turned on.
3. Source (S): This is the terminal through which the current exits the MOSFET and returns to the circuit.
The IXFP4N85X is designed for high-voltage applications, typically offering a drain-source voltage (Vds) rating of 850V and a continuous drain current (Id) of around 4A. It is used in various power electronics applications, including power supplies, converters, and motor control, due to its capability to handle high voltage and current levels efficiently.
Manufacturer
The IXFP4N85X is manufactured by IXYS Corporation. IXYS is a company that specializes in the development and production of power semiconductors and integrated circuits. Their products are commonly used in applications involving power management, energy efficiency, and renewable energy solutions. IXYS is known for its focus on high-performance and reliable semiconductor components used in industrial, consumer, telecommunications, automotive, and medical industries.
Application
The IXFP4N85X is an N-channel MOSFET primarily used in power management applications. Its application areas include switching power supplies, motor control circuits, DC-DC converters, and power inverters. Due to its high voltage rating and efficiency, it is suitable for use in industrial systems, consumer electronics, and automotive electronics where efficient power switching is required.
Equivalent
The IXFP4N85X is a power MOSFET typically used in high-voltage applications. Equivalent products can include MOSFETs with similar voltage and current ratings from other manufacturers, such as the IRF840, STP4NK90Z, or FQP4N90. However, it's essential to compare specific parameters like Rds(on), Vgs(th), and package type to ensure compatibility with your application. Always refer to datasheets for precise equivalence.
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