圖片僅供參考

IXFP3N120

Name: IXFP3N120
Rating: 4.7 (12 reviews)

MOSFET N-CH 1200V 3A TO220AB

製造商
製造商。部分 #IXFP3N120
包
資料表
有現貨的200

+BOM RFQ

100%原創；新

24小時準備發貨

365天保修

RFQ&；獲得更多折扣

規格

Supplier	IXYS
Package	Tube
Series	HiPerFET™
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	1200 V
Current-ContinuousDrain(Id)@25°C	3A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	4.5Ohm @ 500mA, 10V
Vgs(th)(Max)@Id	5V @ 1.5mA
GateCharge(Qg)(Max)@Vgs	39 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	1050 pF @ 25 V
PowerDissipation(Max)	200W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Through Hole
SupplierDevicePackage	TO-220-3

概述

Description

IXFP3N120 is an IXYS/IXFP family N‑channel enhancement MOSFET intended for high‑voltage switching in power electronics (offline supplies, inverters, motor drives, etc.). It is designed to handle high drain‑source voltage (around 1.2 kV) with a moderate continuous current, offering relatively low on‑resistance and fast switching for efficient PWM operation. Gate drive typically requires a positive Vgs (often in the 10–12 V range for full conduction) with appropriate protection and dv/dt handling. The device is packaged in standard power packages (e.g., TO‑220/D²PAK variants) and requires proper heatsinking and thermal management to stay within its Safe Operating Area during operation. For exact numbers (Vds, Id, Rds(on), Vgs(th), Qg, package type, and max switching frequency), consult the official datasheet or distributor listing. If you can share a datasheet link or exact market version, I can pull out the precise specs.

Features

IXFP3N120 features (typical for this device):
- N-channel enhancement-mode MOSFET
- VDS ≈ 120 V
- Continuous current rating in the single-digit amperes
- Very low RDS(on) (low tens of milliohms)
- Fast switching with low gate charge
- Logic-level gate drive compatible (VGS ~ 4.5–10 V)
- Avalanche rugged with robust SOA and body diode
- Available in standard power packages (TO‑220, D²PAK, etc.)
- Operating temperature range: −55°C to +150°C
- Pb-free/RoHS compliant
Note: exact figures depend on package and revision; consult the datasheet for precise numbers.

Package

I don’t have a reliable record for "IXFP3N120." Please confirm the exact manufacturer or part number (e.g., IXYS, Infineon) or provide a datasheet link, and I’ll identify the package type.

Pinout

IXFP3N120 is a 3-pin N-channel power MOSFET (plus a metal tab/heatsink which is electrically the drain). Pin functions:
- Gate (G): control terminal that turns the MOSFET on/off.
- Drain (D): high-voltage main terminal (also the metal tab/heatsink).
- Source (S): return/current-carrying terminal.
Used as a 1200 V N-channel enhancement-mode MOSFET for high-voltage switching.

Manufacturer

The IXFP3N120 is manufactured by IXYS Corporation (now part of Littelfuse following IXYS’s acquisition). IXYS/Littelfuse is a semiconductor company that designs and manufactures power semiconductors and integrated circuits—power MOSFETs, IGBTs, diodes, and modules—serving industrial, automotive, communications, and consumer power-management markets.

Application

High‑voltage, fast‑switching power device (IGBT/MOSFET) from IXYS. Common applications:
- Switch‑mode power supplies and DC–DC converters
- Industrial motor drives and servo controllers
- Solar/wind inverters and grid‑tie converters
- Uninterruptible power supplies (UPS)
- Welding and induction‑heating power electronics

Equivalent

I can’t reliably list equivalents without the IXFP3N120’s full type (MOSFET vs IGBT) and key specs. Please provide its datasheet or at least VDS (1200 V?), continuous ID, RDS(on) or VCE(sat), gate threshold, package and switching speed. With those I can give direct equivalents (e.g., comparable 1200 V MOSFETs/IGBTs from Infineon, ST, IR, ON Semiconductor).