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IXFN150N10
MOSFET N-CH 100V 150A SOT-227
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規格
| Supplier | IXYS |
| Package | Bulk |
| Series | HiPerFET™ |
| ProductStatus | Not For New Designs |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 150A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 12mOhm @ 75A, 10V |
| Vgs(th)(Max)@Id | 4V @ 8mA |
| GateCharge(Qg)(Max)@Vgs | 360 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 9000 pF @ 25 V |
| PowerDissipation(Max) | 520W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Chassis Mount |
| SupplierDevicePackage | SOT-227B |
概述
Description
IXFN150N10 is an N‑channel IGBT from IXYS’ IXFN series. It is a high-current, high-voltage switch intended for power electronics.
Typical basics
- Rating (approximate): around 150 A continuous current, 1000 V blocking voltage.
- Gate drive: requires ~15 V to fully turn on (not a logic-level device); gate threshold is much lower but practical drive is 15 V.
- Packaging: available in multiple packages (through-hole and surface-mount variants such as TO-220/TO-247/D2PAK equivalents).
Common uses
- Switch-mode power supplies, motor drives, inverters, DC‑DC converters, renewable energy interfaces, and UPS systems.
Design notes
- Check the datasheet for exact Vce(sat) and switching characteristics.
- Ensure adequate heat sinking and proper gate drive conditioning.
- Consider safe operating area (SOA) limits and apply protection (snubbers, proper gate resistors).
In short, IXFN150N10 is a rugged, high-power N‑channel IGBT suitable for demanding high-voltage switching applications, with typical use in energy conversion and drive circuits.
Typical basics
- Rating (approximate): around 150 A continuous current, 1000 V blocking voltage.
- Gate drive: requires ~15 V to fully turn on (not a logic-level device); gate threshold is much lower but practical drive is 15 V.
- Packaging: available in multiple packages (through-hole and surface-mount variants such as TO-220/TO-247/D2PAK equivalents).
Common uses
- Switch-mode power supplies, motor drives, inverters, DC‑DC converters, renewable energy interfaces, and UPS systems.
Design notes
- Check the datasheet for exact Vce(sat) and switching characteristics.
- Ensure adequate heat sinking and proper gate drive conditioning.
- Consider safe operating area (SOA) limits and apply protection (snubbers, proper gate resistors).
In short, IXFN150N10 is a rugged, high-power N‑channel IGBT suitable for demanding high-voltage switching applications, with typical use in energy conversion and drive circuits.
Features
Key features of IXFN150N10 (N-channel power MOSFET):
- N-channel enhancement-mode MOSFET
- Voltage rating: 100 V (Vds)
- Continuous drain current: up to about 150 A (Tc‑supplied)
- Low on-resistance for high efficiency (Rds(on) specified in datasheet)
- Fast switching capability with low gate charge
- Rugged device with robust SOA and avalanche energy rating
- Integrated fast body diode for bidirectional switching
- Gate drive: fully enhanced around 10 V (gate threshold ~2–4 V; not guaranteed at logic levels)
- Available in multiple packages (e.g., through-hole and surface-mount)
- Suitable for motor control, switching power supplies, DC-DC converters, inverters
- RoHS compliant
Note: Exact numbers (Rds(on), Id, packaging, thermal limits) vary by package and lot. Check the datasheet for precise specifications and operating conditions.
- N-channel enhancement-mode MOSFET
- Voltage rating: 100 V (Vds)
- Continuous drain current: up to about 150 A (Tc‑supplied)
- Low on-resistance for high efficiency (Rds(on) specified in datasheet)
- Fast switching capability with low gate charge
- Rugged device with robust SOA and avalanche energy rating
- Integrated fast body diode for bidirectional switching
- Gate drive: fully enhanced around 10 V (gate threshold ~2–4 V; not guaranteed at logic levels)
- Available in multiple packages (e.g., through-hole and surface-mount)
- Suitable for motor control, switching power supplies, DC-DC converters, inverters
- RoHS compliant
Note: Exact numbers (Rds(on), Id, packaging, thermal limits) vary by package and lot. Check the datasheet for precise specifications and operating conditions.
Package
TO-220AB through-hole package (collector tied to the tab).
Pinout
The IXFN150N10 is a 3-pin N‑channel enhancement‑mode power MOSFET (pins: Gate, Drain, Source). It also has a metal mounting tab electrically tied to the Drain. Its function is high‑current, low‑RDS(on) switching and power handling in applications such as motor drives, DC–DC converters, and power supplies.
Manufacturer
Manufacturer: IXYS Corporation (now part of Littelfuse).
What kind of company: A semiconductor company that designs and manufactures power semiconductors and power-management devices — e.g., power MOSFETs, IGBTs, fast recovery diodes and related ICs for power conversion and motor/industrial applications.
What kind of company: A semiconductor company that designs and manufactures power semiconductors and power-management devices — e.g., power MOSFETs, IGBTs, fast recovery diodes and related ICs for power conversion and motor/industrial applications.
Application
IXFN150N10 is a high-current 100 V N‑channel MOSFET (≈150 A). Typical applications: switch‑mode power supplies and DC‑DC converters (buck/boost, PFC); motor drives and servo controllers; inverters for solar, UPS and other renewable/backup power; industrial power supplies; telecom and automotive power electronics.
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