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IXFB80N50Q2
MOSFET N-CH 500V 80A PLUS264
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規格
| Package | Tube |
| Series | HiPerFET™, Q2 Class |
| ProductStatus | Not For New Designs |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 500 V |
| Current-ContinuousDrain(Id)@25°C | 80A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 60mOhm @ 500mA, 10V |
| Vgs(th)(Max)@Id | 5.5V @ 8mA |
| GateCharge(Qg)(Max)@Vgs | 250 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 15000 pF @ 25 V |
| PowerDissipation(Max) | 960W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | PLUS264™ |
概述
Description
The IXFB80N50Q2 is a high-performance power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in various applications, including power supplies, motor drives, and DC-DC converters. It features a voltage rating of 500V and a continuous drain current of 80A, making it suitable for high-voltage and high-current applications.
This MOSFET is built using advanced trench technology, which enhances its efficiency and reduces on-state resistance (R_DS(on)), allowing for lower conduction losses. The IXFB80N50Q2 also boasts fast switching speeds, which improve overall system performance and efficiency, particularly in high-frequency applications.
The device is packaged in a TO-220 housing, facilitating easy heat dissipation and mounting in various circuit designs. Additionally, it offers good thermal performance and is designed to withstand harsh environmental conditions.
Overall, the IXFB80N50Q2 is an excellent choice for engineers looking for reliable and efficient solutions in power electronics applications.
This MOSFET is built using advanced trench technology, which enhances its efficiency and reduces on-state resistance (R_DS(on)), allowing for lower conduction losses. The IXFB80N50Q2 also boasts fast switching speeds, which improve overall system performance and efficiency, particularly in high-frequency applications.
The device is packaged in a TO-220 housing, facilitating easy heat dissipation and mounting in various circuit designs. Additionally, it offers good thermal performance and is designed to withstand harsh environmental conditions.
Overall, the IXFB80N50Q2 is an excellent choice for engineers looking for reliable and efficient solutions in power electronics applications.
Features
The IXFB80N50Q2 is a high-performance N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 500V, suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 80A, making it ideal for power switching.
3. On-Resistance: It has a low on-resistance (R_DS(on)) of approximately 0.13Ω, which reduces conduction losses and improves efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for efficient driving.
5. Thermal Management: The package is designed for effective heat dissipation, with a maximum junction temperature of 150°C.
6. Fast Switching: The MOSFET features fast switching capabilities, which enhances performance in PWM and other high-frequency applications.
These characteristics make the IXFB80N50Q2 suitable for use in power supplies, motor drives, and industrial automation systems.
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 500V, suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 80A, making it ideal for power switching.
3. On-Resistance: It has a low on-resistance (R_DS(on)) of approximately 0.13Ω, which reduces conduction losses and improves efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for efficient driving.
5. Thermal Management: The package is designed for effective heat dissipation, with a maximum junction temperature of 150°C.
6. Fast Switching: The MOSFET features fast switching capabilities, which enhances performance in PWM and other high-frequency applications.
These characteristics make the IXFB80N50Q2 suitable for use in power supplies, motor drives, and industrial automation systems.
Package
The IXFB80N50Q2 is typically packaged in a TO-247 format. This package type is designed for high power applications, offering efficient thermal management and robust performance.
Pinout
The IXFB80N50Q2 is a N-channel MOSFET from IXYS, designed for high-voltage applications. It has a total of 3 pins.
The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this pin turns the device on or off.
2. Drain (D): This pin is the output where the load is connected. It allows current to flow from the drain to the source when the MOSFET is on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply, serving as the reference point for the drain current.
The IXFB80N50Q2 is rated for a maximum V_DS of 500V and can handle continuous currents up to 80A, making it suitable for various power switching applications.
The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this pin turns the device on or off.
2. Drain (D): This pin is the output where the load is connected. It allows current to flow from the drain to the source when the MOSFET is on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply, serving as the reference point for the drain current.
The IXFB80N50Q2 is rated for a maximum V_DS of 500V and can handle continuous currents up to 80A, making it suitable for various power switching applications.
Manufacturer
The IXFB80N50Q2 is manufactured by IXYS Corporation, which is a subsidiary of Littelfuse, Inc. IXYS specializes in the production of semiconductor devices, focusing on power management, power conversion, and power switching technologies. The company develops a wide range of products, including power MOSFETs, IGBTs, and other related components used in various applications such as industrial automation, renewable energy, and automotive systems. Littelfuse, which acquired IXYS in 2018, is a leading provider of circuit protection, sensing, and control solutions, further enhancing IXYS's capabilities in the power semiconductor market.
Application
The IXFB80N50Q2 is a high-power MOSFET primarily used in applications such as power supplies, motor drives, and industrial equipment. Its fast switching capabilities and low on-resistance make it suitable for DC-DC converters, inverters, and renewable energy systems like solar inverters. Additionally, it can be utilized in automotive applications, including electric vehicle power management and battery charging systems.
Equivalent
Equivalent products to the IXFB80N50Q2 MOSFET include the Infineon IRF3205, STMicroelectronics STP80NF50, and ON Semiconductor NTP80N50. These alternatives share similar voltage and current ratings, making them suitable replacements in various applications. Always verify specifications to ensure compatibility with your specific circuit requirements.
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