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IS66WV51216EBLL-70TLI

Name: IS66WV51216EBLL-70TLI
Rating: 4.7 (12 reviews)

IC PSRAM 8MBIT PAR 44TSOP II

製造商
製造商。部分 #IS66WV51216EBLL-70TLI
包 44-TSOP (0.400, 10.16mm Width)
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規格

Supplier	ISSI, Integrated Silicon Solution Inc
Package	Tray
ProductStatus	Active
MemoryType	Volatile
MemoryFormat	PSRAM
Technology	PSRAM (Pseudo SRAM)
MemorySize	8Mb (512K x 16)
MemoryInterface	Parallel
WriteCycleTime-WordPage	70ns
AccessTime	70 ns
Voltage-Supply	2.5V ~ 3.6V
OperatingTemperature	-40°C ~ 85°C (TA)
MountingType	Surface Mount
Package/Case	44-TSOP (0.400, 10.16mm Width)

概述

Description

IS66WV51216EBLL-70TLI is ISSI’s 8-Mbit static RAM (SRAM) with a 512K × 16-bit organization. It features a wide-voltage, low-power design and a 16-bit data bus with asynchronous read/write. Key controls are Chip Enable (CE), Output Enable (OE), and Write Enable (WE); it also provides separate byte enables (LB/UB) for partial writes on a 16-bit bus. The speed grade -70 indicates a 70 ns access time, and the device typically supports a wide supply range (the “WV” denotes wide-voltage operation) across common industrial temperatures. Addressing is A0–A18 (19 lines) and data I/O is DQ0–DQ15. Applications include caches, frame/buffer memory, graphics buffers, and other high-speed random-access memory needs in embedded systems. For exact electrical specs, timing diagrams, and pinout, consult the official ISSI datasheet for IS66WV51216EBLL-70TLI.

Features

Here are typical features for IS66WV51216EBLL-70TLI (exact values should be confirmed from the datasheet):
- Memory density: 512 Mbit, organized as 32M x 16 (16-bit data width)
- Speed grade: -70 (70 ns access time)
- Interface: synchronous memory with latched commands/addresses
- Voltage: single-supply operating range (leadless RoHS package)
- Architecture: multi-bank organization with page-mode operation
- Power management: low-power standby and active current modes; deep/power-down options
- Refresh: internal/self-refresh capability
- Packaging: Pb-free, leadless package variant (EBLL/TLI family)
- Temperature range: typical industrial ranges (e.g., -40°C to 85°C)
Note: Please consult the official datasheet for exact voltage, timing, bank count, refresh specifics, and package details for your revision.

Package

Leadless Ball Grid Array (BGA) package (EBLL).

Pinout

Pin count: 32 pins (EBLL leadless package).
Function: 512K × 16-bit static RAM (parallel interface) with standard CE/OE/WE control, 70 ns access time.

Manufacturer

Manufacturer: Integrated Silicon Solution, Inc. (ISSI).
What kind of company: ISSI is a fabless semiconductor company that designs and markets memory and analog integrated circuits (e.g., SRAM/DRAM/NVRAM and related ICs).

Application

IS66WV51216EBLL-70TLI is a 512K x 16-bit SRAM (low-voltage) for embedded/portable systems. Common applications include:
- Microcontroller/DSP data buffers and caches
- Video/graphics frame buffers
- Networking/telecom line cards and routers
- Automotive infotainment and instrument clusters
- Digital consumer devices (set-top boxes, printers, cameras, game consoles)
- Industrial controllers and embedded instrumentation
This covers high-speed, dense memory needs in compact, power-conscious designs.