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IS62WV51216EBLL-45TLI

Name: IS62WV51216EBLL-45TLI
Rating: 4.7 (12 reviews)

IC SRAM 8MBIT PARALLEL 44TSOP II

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規格

Part Status	Active
DigiKey Programmable	Not Verified
Memory Type	Volatile
Memory Format	SRAM
Technology	SRAM - Asynchronous
Memory Size	8Mbit
Memory Organization	512K x 16
Memory Interface	Parallel
Write Cycle Time - Word, Page	45ns
Access Time	45 ns
Voltage - Supply	2.2V ~ 3.6V
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount
Package / Case	44-TSOP (0.400", 10.16mm Width)
Supplier Device Package	44-TSOP II
Base Product Number	IS62WV51216

概述

Description

The IS62WV51216EBLL-45TLI is a high-performance CMOS Static Random Access Memory (SRAM) chip produced by ISSI (Integrated Silicon Solutions, Inc.). It features a density of 512 Kbit (64 K x 8 bits) and operates at a maximum access time of 45 nanoseconds. This SRAM is designed for use in various applications, including telecommunications, automotive systems, networking, and consumer electronics, where fast, reliable memory is essential.
Key specifications include a wide operating voltage range (typically 2.7V to 5.5V), low power consumption, and asynchronous access. The device supports standard SRAM interface protocols, making it compatible with various microcontrollers and processors. Its package options, including a 44-pin TSOP, facilitate easy integration into diverse circuit designs.
Overall, the IS62WV51216EBLL-45TLI is ideal for applications requiring high-speed data access and storage, combined with low power operation.

Package

The IS62WV51216EBLL-45TLI is offered in a 48-pin TSOP-II (Thin Small Outline Package) package type, which is commonly used for memory devices.

Pinout

The IS62WV51216EBLL-45TLI is a 512K x 16-bit (or 1 Megabit) SRAM device. It has a total of 32 pins. The primary functions of these pins include:
1. Address Pins (A0-A18): 19 pins used for addressing the memory locations.
2. Data Pins (D0-D15): 16 pins for data input and output.
3. Chip Enable (CE): Activates the device.
4. Output Enable (OE): Enables data output.
5. Write Enable (WE): Controls write operations.
6. Byte Enable (BE): Enables or disables byte operations.
7. VCC: Power supply pin.
8. GND: Ground pin.
This SRAM operates with a supply voltage of 2.7V to 3.6V and is designed for high-speed performance, making it suitable for various applications requiring fast data access.

Manufacturer

The IS62WV51216EBLL-45TLI is manufactured by Integrated Silicon Solution, Inc. (ISSI). ISSI is a semiconductor company that specializes in the design and production of high-performance memory products, including SRAM, DRAM, and Flash memory. Founded in 1988 and headquartered in San Jose, California, ISSI serves various markets, such as automotive, communications, consumer electronics, and industrial applications. The company is known for its focus on innovative memory solutions that meet the needs of a rapidly evolving technology landscape.

Application

The IS62WV51216EBLL-45TLI is a 512K x 16-bit asynchronous SRAM, commonly used in various applications such as embedded systems, networking equipment, telecommunications, automotive electronics, and industrial control systems. Its fast access time and low power consumption make it suitable for cache memory, data buffering, and temporary data storage in high-speed processing environments.

Equivalent

The IS62WV51216EBLL-45TLI chip is a 512K x 16-bit SRAM. Equivalent products include:
1. Cypress CY7C1281KV18
2. Micron MT45W512M16
3. IDT 72V512L15
4. On Semiconductor N25Q512A
Ensure to check the specific electrical and timing characteristics, as they may vary slightly between manufacturers.