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IS62WV102416EBLL-55BLI
IC SRAM 16MBIT PARALLEL 48VFBGA
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- 製造商。 部分 #IS62WV102416EBLL-55BLI
- 包 BGA-48
- 資料表 IS62WV102416EBLL-55BLI DataSheet
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規格
| Package | Tray |
| ProductStatus | Active |
| MemoryType | Volatile |
| MemoryFormat | SRAM |
| Technology | SRAM - Asynchronous |
| MemorySize | 16Mb (1M x 16) |
| MemoryInterface | Parallel |
| WriteCycleTime-WordPage | 55ns |
| AccessTime | 55 ns |
| Voltage-Supply | 2.2V ~ 3.6V |
| OperatingTemperature | -40°C ~ 85°C (TA) |
| MountingType | Surface Mount |
| Package/Case | 48-VFBGA |
概述
Description
Features
IS62WV102416EBLL-55BLI is a static RAM device. Key features:
- Organization: 1,024K × 16 (16M-bit) SRAM
- Speed: 55 ns access time
- Voltage: Wide-voltage operation, typically 2.7 V to 3.6 V
- Interface: Asynchronous, 16-bit data bus; separate address and data inputs/outputs
- Control: Chip Enable (CE), Output Enable (OE), and Write Enable (WE)
- Outputs: Three-state, 16-bit data outputs
- Power: Low standby current
- Package: EBLL leadless package
These features make it suitable for high-speed buffer/cache applications requiring a 16-bit wide SRAM with modest voltage and fast access.
- Organization: 1,024K × 16 (16M-bit) SRAM
- Speed: 55 ns access time
- Voltage: Wide-voltage operation, typically 2.7 V to 3.6 V
- Interface: Asynchronous, 16-bit data bus; separate address and data inputs/outputs
- Control: Chip Enable (CE), Output Enable (OE), and Write Enable (WE)
- Outputs: Three-state, 16-bit data outputs
- Power: Low standby current
- Package: EBLL leadless package
These features make it suitable for high-speed buffer/cache applications requiring a 16-bit wide SRAM with modest voltage and fast access.
Package
The package is EBLL — an 8‑lead leadless small-outline package (Pb-free).
Pinout
- Pin count: 32 pins (32-pin package)
- Function: 1,024 × 16-bit static RAM (SRAM) with a 16-bit data bus; asynchronous read/write with Chip Enable (CE#), Output Enable (OE#), and Write Enable (WE#); 55 ns speed grade.
- Function: 1,024 × 16-bit static RAM (SRAM) with a 16-bit data bus; asynchronous read/write with Chip Enable (CE#), Output Enable (OE#), and Write Enable (WE#); 55 ns speed grade.
Manufacturer
Manufacturer: Integrated Silicon Solution, Inc. (ISSI).
Company type: A fabless semiconductor company that designs and markets memory products (DRAM and SRAM).
Company type: A fabless semiconductor company that designs and markets memory products (DRAM and SRAM).
Application
Applications for IS62WV102416EBLL-55BLI include:
- Embedded systems (MCU/SoC memory)
- Graphics/frame buffers in mobile/consumer devices
- Networking/telecom equipment (routers, switches)
- Automotive infotainment and telematics
- Industrial control and medical instrumentation; portable data-logging and buffering
(Note: Use cases depend on the device’s memory density and interface.)
- Embedded systems (MCU/SoC memory)
- Graphics/frame buffers in mobile/consumer devices
- Networking/telecom equipment (routers, switches)
- Automotive infotainment and telematics
- Industrial control and medical instrumentation; portable data-logging and buffering
(Note: Use cases depend on the device’s memory density and interface.)
Equivalent
IS62WV102416EBLL-55BLI is a 1M×16-bit parallel SRAM. Exact cross-references depend on package, voltage and speed. Please confirm:
- voltage (3.3V / 2.5V / 1.8V)
- package (SOIC-28 / TSOP-32 / etc.)
- speed grade (55 ns) and temperature
With those, I can provide precise equivalents from major vendors (Cypress, Renesas, Micron, etc.).
- voltage (3.3V / 2.5V / 1.8V)
- package (SOIC-28 / TSOP-32 / etc.)
- speed grade (55 ns) and temperature
With those, I can provide precise equivalents from major vendors (Cypress, Renesas, Micron, etc.).
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