圖片僅供參考
IS61WV51216EEBLL-10BLI
IC SRAM 8MBIT PARALLEL 48TFBGA
- 製造商
- 製造商。 部分 #IS61WV51216EEBLL-10BLI
- 包
- 資料表
- 有現貨的5901
100%原創; 新
24小時準備發貨
365天保修
RFQ&; 獲得更多折扣
規格
| Part Status | Active |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Asynchronous |
| Memory Size | 8Mbit |
| Memory Organization | 512K x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 10ns |
| Voltage - Supply | 2.4V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 48-TFBGA |
| Supplier Device Package | 48-TFBGA (6x8) |
| Base Product Number | IS61WV51216 |
| Access Time | 10 ns |
概述
Description
The IS61WV51216EEBLL-10BLI is a high-performance, low-power SRAM (Static Random Access Memory) chip manufactured by ISSI (Integrated Silicon Solution, Inc.). It features a density of 512 Kbits organized as 64 Kwords x 8 bits. This memory device operates with a supply voltage range of 2.7V to 3.6V, making it suitable for battery-powered applications.
Key features include a fast access time of 10 ns, allowing for quick data retrieval, and a simple interface that supports asynchronous read and write operations. The chip also includes a low-power mode to conserve energy during idle periods, making it ideal for mobile and portable devices.
The IS61WV51216EEBLL-10BLI is packaged in a compact 48-pin TSOP (Thin Small Outline Package), facilitating easy integration into a variety of electronic systems, including consumer electronics, telecommunications, and automotive applications. Its reliability and speed make it a popular choice for designers looking for efficient memory solutions.
Key features include a fast access time of 10 ns, allowing for quick data retrieval, and a simple interface that supports asynchronous read and write operations. The chip also includes a low-power mode to conserve energy during idle periods, making it ideal for mobile and portable devices.
The IS61WV51216EEBLL-10BLI is packaged in a compact 48-pin TSOP (Thin Small Outline Package), facilitating easy integration into a variety of electronic systems, including consumer electronics, telecommunications, and automotive applications. Its reliability and speed make it a popular choice for designers looking for efficient memory solutions.
Features
The IS61WV51216EEBLL-10BLI is a high-performance, low-power static random-access memory (SRAM) chip featuring 512K bits (64K x 8) organization. Key features include:
1. Speed: It operates at a maximum access time of 10 ns, allowing for rapid data retrieval.
2. Voltage: The chip typically operates at a supply voltage of 2.7V to 3.6V, making it suitable for battery-operated devices.
3. Low Power Consumption: It has low active power consumption, enhancing energy efficiency in portable applications.
4. Asynchronous Operation: The device supports asynchronous read and write operations, simplifying the design process.
5. Temperature Range: It operates reliably across a commercial temperature range of 0°C to 70°C.
6. Package: Available in a compact 32-pin TSOP II package, facilitating space-constrained designs.
7. Data Retention: The chip ensures data integrity with a data retention voltage as low as 1.5V.
These features make the IS61WV51216EEBLL-10BLI suitable for various applications, including networking, automotive, and consumer electronics.
1. Speed: It operates at a maximum access time of 10 ns, allowing for rapid data retrieval.
2. Voltage: The chip typically operates at a supply voltage of 2.7V to 3.6V, making it suitable for battery-operated devices.
3. Low Power Consumption: It has low active power consumption, enhancing energy efficiency in portable applications.
4. Asynchronous Operation: The device supports asynchronous read and write operations, simplifying the design process.
5. Temperature Range: It operates reliably across a commercial temperature range of 0°C to 70°C.
6. Package: Available in a compact 32-pin TSOP II package, facilitating space-constrained designs.
7. Data Retention: The chip ensures data integrity with a data retention voltage as low as 1.5V.
These features make the IS61WV51216EEBLL-10BLI suitable for various applications, including networking, automotive, and consumer electronics.
Package
The IS61WV51216EEBLL-10BLI is a 512Mb (64MB) synchronous DRAM memory chip packaged in a 54-pin TSOP-II (Thin Small Outline Package) format.
Pinout
The IS61WV51216EEBLL-10BLI is a 512K x 16-bit (1 Megabit) synchronous dynamic random-access memory (SDRAM) component. It features a total of 54 pins.
Key functions of the pins include:
- Data pins (DQ0-DQ15): 16-bit data input/output bus.
- Address pins (A0-A18): Used to select memory addresses.
- Control pins:
- CS (Chip Select): Activates the device.
- WE (Write Enable): Controls write operations.
- OE (Output Enable): Controls output data.
- RAS (Row Address Strobe) and CAS (Column Address Strobe): Used for row and column access.
- Clock pin (CLK): Synchronizes operations.
- Power pins (VDD, VSS): Provide power supply and ground connections.
- Other pins: Include the mode register set (MRS) and burst mode control.
This configuration allows for high-speed data access and efficient memory management in various applications.
Key functions of the pins include:
- Data pins (DQ0-DQ15): 16-bit data input/output bus.
- Address pins (A0-A18): Used to select memory addresses.
- Control pins:
- CS (Chip Select): Activates the device.
- WE (Write Enable): Controls write operations.
- OE (Output Enable): Controls output data.
- RAS (Row Address Strobe) and CAS (Column Address Strobe): Used for row and column access.
- Clock pin (CLK): Synchronizes operations.
- Power pins (VDD, VSS): Provide power supply and ground connections.
- Other pins: Include the mode register set (MRS) and burst mode control.
This configuration allows for high-speed data access and efficient memory management in various applications.
Manufacturer
The manufacturer of the IS61WV51216EEBLL-10BLI is Integrated Silicon Solution, Inc. (ISSI). ISSI is a semiconductor company that specializes in the design and production of high-performance memory products, including SRAM, DRAM, and flash memory. Founded in 1988, the company focuses on providing innovative memory solutions for various applications such as telecommunications, automotive, industrial, and consumer electronics. ISSI is known for its commitment to quality and performance in the semiconductor industry.
Application
The IS61WV51216EEBLL-10BLI is a 512Mb synchronous dynamic random-access memory (SDRAM) chip commonly used in applications such as telecommunications, networking equipment, consumer electronics, automotive systems, and embedded systems. Its high-speed performance and low power consumption make it suitable for data-intensive applications, including graphics processing, digital signal processing, and high-performance computing tasks.
Equivalent
The IS61WV51216EEBLL-10BLI chip is a DRAM memory component. Equivalent products include the MT46V16M16LFBF-75 and K4S561632H-10. Always verify specifications such as voltage, speed, and organization to ensure compatibility.
船舶
運輸管道我們
通過DHL、FedEx、TNT、UPS或您選擇的任何其他貨運代理提供全球運輸服務。
運費參攷(DHL/FedEx):
動態主要裝載: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為2-5個工作日。
聯邦快遞: 運費從25美元到40美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
不斷電供應系統: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
三硝基甲苯: 運費從25美元到65美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
增强型短消息: 運費從30美元到50美元(0.5公斤)不等,預計交貨時間為7-15個工作日。
掛號: 運費為2-4美元(0.1公斤),預計交貨時間為5-20個工作日。
支付
Payment Methods
付款條件為100%預付。
現時,我們只接受以下付款方式:
1. 貝寶
2. 信用卡/借記卡
3. 電匯
類似的
-
MX25L3233FZBI-08Q
Macronix
-
MX25V1635FZNQ03
Macronix
-
MX66U1G45GXDI00
Macronix
-
MX25V4035FZUI
Macronix
-
MX25R3235FZNIL0
Macronix
-
MX25L8035EM2I-10G
Macronix
-
MX25L25673GMI-08G
Macronix
-
MX25L6433FM2I-08G
Macronix
-
MX29LV160DTTI-70G
Macronix
-
MX29F040CQI-70G
Macronix
-
MX29LV640ETTI-70G
Macronix
-
MX25L25735FMI-10G
Macronix