IS61WV102416FBLL-10TLI

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IS61WV102416FBLL-10TLI

IC SRAM 16MBIT PARALLEL 48TSOP I

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規格

Package Tray
ProductStatus Active
MemoryType Volatile
MemoryFormat SRAM
Technology SRAM - Asynchronous
MemorySize 16Mb (1M x 16)
MemoryInterface Parallel
WriteCycleTime-WordPage 10ns
AccessTime 10 ns
Voltage-Supply 2.4V ~ 3.6V
OperatingTemperature -40°C ~ 85°C (TA)
MountingType Surface Mount
Package/Case 48-TFSOP (0.724, 18.40mm Width)

概述

Description

IS61WV102416FBLL-10TLI is a high-density static RAM (SRAM) device from ISSI (IS61WV102416 family). Key points:
- Organization: 1,024K × 16-bit SRAM (1M words, 16-bit data path).
- Interface: Parallel, asynchronous with Chip Enable (CE), Output Enable (OE), and Write Enable (WE); addresses A0–A19 (20 lines); data DQ0–DQ15.
- Speed/Voltage: -10 speed grade (about 10 ns access time); wide-voltage operation typically 2.7–3.6 V.
- Package: Leadless FBLL variant (specifics available in datasheet; pinout and mechanical details vary by package).
Common uses: caches, buffers, scratchpad memory, and frame buffers in embedded systems and ASICs.
Note: For exact pinout, timing diagrams, current/power specs, temperature range, and packaging details, consult the official datasheet.

Features

IS61WV102416FBLL-10TLI features:
- Static RAM: 16 Mb total (1,024K × 16)
- Fast access: 10 ns/tAA
- Low-voltage operation: typically 2.7–3.6 V
- Asynchronous operation (no clock)
- 16-bit data bus with three-state I/O
- Byte write capability via LB# and UB# (low/upper byte write enables)
- Control pins: CE#, OE#, WE# for read/write control
- Leadless package: FBLL family; designed for compact boards
- Temperature: industrial options (e.g., -40°C to 85°C) depending on variant
Note: exact temperature range and pinout can vary by package/version; check the datasheet for your specific lot.

Package

FBLL stands for Fine Ball Leadless. So the IS61WV102416FBLL-10TLI uses a leadless Fine Ball grid/ball-leadless package (leadless BGA-style).

Pinout

Pin count: 44 pins (typical TSOP-II package for this part).
Function: 1,024K × 16-bit static RAM (SRAM) with tri-state I/O. It uses A0–A19 for addresses and DQ0–DQ15 for data, plus control pins CE, OE, and WE (speed grade -10).

Manufacturer

Manufacturer: Integrated Silicon Solution, Inc. (ISSI).
Company type: A fabless semiconductor company that designs and markets memory products (SRAM, DRAM, and other memory solutions) for electronics.

Application

IS61WV102416FBLL-10TLI is a 1M×16 bit static RAM. Suitable for:
- Main memory in embedded microcontrollers/SoCs
- Frame buffer and graphics/display memory
- Cache/buffer RAM in DSPs and CPUs
- Packet/data buffering in networking/telecom equipment
- Industrial/automotive controllers and data-logging systems

Equivalent

IS61WV102416FBLL-10TLI is a 1,024K × 16-bit, asynchronous SRAM (10 ns, typically 3.3 V) in a TLI package. Direct cross-references vary by voltage/package. A common equivalent is Alliance Memory AS6C1024-10 (1M × 16, 3.3 V, 10 ns). For a precise cross, please provide voltage and package details.

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