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IS61LV6416-10TL
IC SRAM 1MBIT PARALLEL 44TSOP II
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規格
| Package | Tray |
| ProductStatus | Active |
| MemoryType | Volatile |
| MemoryFormat | SRAM |
| Technology | SRAM - Asynchronous |
| MemorySize | 1Mb (64K x 16) |
| MemoryInterface | Parallel |
| WriteCycleTime-WordPage | 10ns |
| AccessTime | 10 ns |
| Voltage-Supply | 3.135V ~ 3.6V |
| OperatingTemperature | 0°C ~ 70°C (TA) |
| MountingType | Surface Mount |
| Package/Case | 44-TSOP (0.400, 10.16mm Width) |
概述
Description
The IS61LV6416-10TL is a high-performance static random-access memory (SRAM) chip produced by ISSI (Integrated Silicon Solutions, Inc.). It is a 16-megabit (2M x 8) SRAM often used in various applications such as networking, telecommunications, and consumer electronics. The "10" in its designation indicates a 10-nanosecond access time, suitable for fast data processing needs.
Key features include low power consumption, a wide operating voltage range (typically 2.7V to 3.6V), and a multiplexed address/data bus for increased efficiency. The chip supports asynchronous read and write operations, making it versatile for different designs. It is available in various package options, including DIP and SOIC, facilitating easy integration into circuit boards.
The IS61LV6416-10TL is ideal for applications requiring fast and reliable memory solutions, such as cache memory or temporary storage in high-speed data processing tasks.
Key features include low power consumption, a wide operating voltage range (typically 2.7V to 3.6V), and a multiplexed address/data bus for increased efficiency. The chip supports asynchronous read and write operations, making it versatile for different designs. It is available in various package options, including DIP and SOIC, facilitating easy integration into circuit boards.
The IS61LV6416-10TL is ideal for applications requiring fast and reliable memory solutions, such as cache memory or temporary storage in high-speed data processing tasks.
Features
The IS61LV6416-10TL is a high-performance, low-power CMOS SRAM (Static Random Access Memory) chip with a capacity of 16 megabits (2 megabytes). Key features include:
- Access Time: 10 ns, allowing for fast read and write operations.
- Organization: 2M x 8 bits, supporting byte-wide data access.
- Voltage Supply: Operates at a single supply voltage of 3.0V to 3.6V, suitable for low-power applications.
- Low Power Consumption: Designed for minimal power use, with a typical standby current of 1 µA.
- Pin Configuration: Standard 44-pin TSOP II package, facilitating easy integration into various designs.
- Asynchronous Operation: Easy interfacing without the need for clock signals.
- Data Retention: Maintains data integrity even during power-down, with a specified retention voltage.
These features make the IS61LV6416-10TL ideal for high-speed applications in consumer electronics, networking, and telecommunications.
- Access Time: 10 ns, allowing for fast read and write operations.
- Organization: 2M x 8 bits, supporting byte-wide data access.
- Voltage Supply: Operates at a single supply voltage of 3.0V to 3.6V, suitable for low-power applications.
- Low Power Consumption: Designed for minimal power use, with a typical standby current of 1 µA.
- Pin Configuration: Standard 44-pin TSOP II package, facilitating easy integration into various designs.
- Asynchronous Operation: Easy interfacing without the need for clock signals.
- Data Retention: Maintains data integrity even during power-down, with a specified retention voltage.
These features make the IS61LV6416-10TL ideal for high-speed applications in consumer electronics, networking, and telecommunications.
Package
The IS61LV6416-10TL is packaged in a TSOP II (Thin Small Outline Package) format. It features a 48-pin configuration, designed for high-density applications in memory storage.
Pinout
The IS61LV6416-10TL is a 16 Megabit (2M x 8) CMOS SRAM memory chip. It features a pin count of 44 pins in a TSOP II package.
The primary functions of its pins are as follows:
- Data Pins (DQ0-DQ7): 8 data input/output lines for reading and writing data.
- Address Pins (A0-A18): 19 address lines to access memory locations.
- Chip Enable (CE): Activates the chip for read/write operations.
- Output Enable (OE): Enables data output when low.
- Write Enable (WE): Controls write operations; data is written when low.
- Byte Enable (BWa, BWb): Controls data access for each byte.
- VCC: Power supply for the chip.
- GND: Ground reference.
This SRAM operates at a speed of 10 ns, making it suitable for high-speed applications.
The primary functions of its pins are as follows:
- Data Pins (DQ0-DQ7): 8 data input/output lines for reading and writing data.
- Address Pins (A0-A18): 19 address lines to access memory locations.
- Chip Enable (CE): Activates the chip for read/write operations.
- Output Enable (OE): Enables data output when low.
- Write Enable (WE): Controls write operations; data is written when low.
- Byte Enable (BWa, BWb): Controls data access for each byte.
- VCC: Power supply for the chip.
- GND: Ground reference.
This SRAM operates at a speed of 10 ns, making it suitable for high-speed applications.
Manufacturer
The manufacturer of the IS61LV6416-10TL is Integrated Silicon Solution, Inc. (ISSI). ISSI is a semiconductor company that specializes in the design and production of high-performance memory solutions, including SRAM, DRAM, and flash memory products. Founded in 1988 and headquartered in San Jose, California, ISSI serves various markets such as telecommunications, automotive, consumer electronics, and industrial applications. The IS61LV6416-10TL is a low-voltage CMOS static random-access memory (SRAM) chip, known for its high speed and low power consumption, making it suitable for applications requiring fast data access and storage.
Application
The IS61LV6416-10TL is a 16 Megabit (2M x 8) SRAM chip commonly used in applications such as telecommunications, networking equipment, and consumer electronics. Its low access time and high speed make it suitable for data buffering, cache memory in processors, video processing, and real-time data logging in embedded systems. Its reliability and performance also support applications in automotive and industrial control systems.
Equivalent
The IS61LV6416-10TL is a 16Mb (2M x 8) low-voltage SRAM chip. Equivalent products include the Cypress CY7C199D, Micron MT16LVDR16, and ISSI IS61LV6416-10. Ensure compatibility in terms of voltage, speed, and pin configuration when considering alternatives.
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