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IS43DR16640C-3DBLI
IC DRAM 1GBIT PARALLEL 84TWBGA
- 製造商
- 製造商。 部分 #IS43DR16640C-3DBLI
- 包 84-TFBGA
- 資料表
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規格
| Supplier | ISSI, Integrated Silicon Solution Inc |
| Package | Tray |
| ProductStatus | Active |
| MemoryType | Volatile |
| MemoryFormat | DRAM |
| Technology | SDRAM - DDR2 |
| MemorySize | 1Gb (64M x 16) |
| MemoryInterface | Parallel |
| ClockFrequency | 333 MHz |
| WriteCycleTime-WordPage | 15ns |
| AccessTime | 450 ps |
| Voltage-Supply | 1.7V ~ 1.9V |
| OperatingTemperature | -40°C ~ 85°C (TA) |
| MountingType | Surface Mount |
| Package/Case | 84-TFBGA |
概述
Description
IS43DR16640C-3DBLI is a high-density DRAM memory IC from ISSI (Integrated Silicon Solution, Inc.). It’s designed as a building block for system memory in electronics and laptops/embedded devices.
Key points:
- Type: Dynamic RAM (DRAM) device; requires a memory controller and refresh cycles.
- Capacity/organization: High-density IS43DR family part; exact word×bit organization depends on revision (often wide data-bus configurations for large memory) – check the datasheet for exact size.
- Interface and timing: Uses standard DRAM signaling with banked access and timing parameters defined by the device’s speed grade.
- Speed grade and package: -3 indicates a specific speed grade; DBLI is the package/land pattern code (leadless/bga-like package).
- Usage: Plugged into a memory subsystem with proper initialization, refresh, and controller support; used where large memory capacity in a compact package is needed.
For precise electrical specs (voltage, timings, organization, temperature range) and packaging details, consult the official datasheet and supplier documentation. If you can share the exact application or need, I can help extract the relevant sections.
Key points:
- Type: Dynamic RAM (DRAM) device; requires a memory controller and refresh cycles.
- Capacity/organization: High-density IS43DR family part; exact word×bit organization depends on revision (often wide data-bus configurations for large memory) – check the datasheet for exact size.
- Interface and timing: Uses standard DRAM signaling with banked access and timing parameters defined by the device’s speed grade.
- Speed grade and package: -3 indicates a specific speed grade; DBLI is the package/land pattern code (leadless/bga-like package).
- Usage: Plugged into a memory subsystem with proper initialization, refresh, and controller support; used where large memory capacity in a compact package is needed.
For precise electrical specs (voltage, timings, organization, temperature range) and packaging details, consult the official datasheet and supplier documentation. If you can share the exact application or need, I can help extract the relevant sections.
Package
TSOP II, 54-pin, lead-free (DBLI) package.
Pinout
- Pin count: 84 pins (84-ball BGA package)
- Function: 16M × 4-bit synchronous DRAM (SDRAM) device.
- Function: 16M × 4-bit synchronous DRAM (SDRAM) device.
Manufacturer
- Manufacturer: Integrated Silicon Solution, Inc. (ISSI)
- What kind of company: A fabless semiconductor company that designs and markets memory ICs (DRAM, SRAM, flash) for PCs, servers, networking, and consumer electronics.
- What kind of company: A fabless semiconductor company that designs and markets memory ICs (DRAM, SRAM, flash) for PCs, servers, networking, and consumer electronics.
Application
Applications for IS43DR16640C-3DBLI include:
- Main/system memory for PCs and notebooks
- Embedded systems (industrial, consumer, portable)
- Graphics and video buffers
- Networking/telecom equipment
- Automotive infotainment and instrumentation
- General memory expansion for digital consumer electronics and multimedia devices
- Main/system memory for PCs and notebooks
- Embedded systems (industrial, consumer, portable)
- Graphics and video buffers
- Networking/telecom equipment
- Automotive infotainment and instrumentation
- General memory expansion for digital consumer electronics and multimedia devices
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