IS42S32400E-6TL

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IS42S32400E-6TL

IC DRAM 128MBIT PAR 86TSOP II

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規格

Supplier ISSI, Integrated Silicon Solution Inc
Package Tray
ProductStatus Obsolete
MemoryType Volatile
MemoryFormat DRAM
Technology SDRAM
MemorySize 128Mb (4M x 32)
MemoryInterface Parallel
ClockFrequency 166 MHz
AccessTime 5.4 ns
Voltage-Supply 3V ~ 3.6V
OperatingTemperature 0°C ~ 70°C (TA)
MountingType Surface Mount
Package/Case 86-TFSOP (0.400, 10.16mm Width)

概述

Description

Features

IS42S32400E-6TL features (concise):
- 32M x 4-bit static RAM (128 Mbit total)
- 3.3V single-supply operation
- Speed grade: 6 ns access time
- Extended temperature variant: -40°C to +85°C
- TSOP II (54-pin) leaded package (TL)
- Asynchronous operation with separate CE, OE, WE signals
- 25-bit address bus (A0–A24) and 4-bit data I/O (DQ0–DQ3)
- 3-state outputs; suitable for multiple devices on a shared bus
- TTL-compatible inputs; low-power standby via CE
Note: This is a high-level feature summary; for exact electrical characteristics (current, leakage, noise, timing margins), refer to the datasheet.

Package

TSOP‑II (56‑pin) surface‑mount package; Pb‑free variant is the -TL suffix.

Pinout

- Pin count: 54 pins (TSOP II package)
- Function: 128 Mb Synchronous DRAM (SDRAM) version with a 4-bit data bus (32M × 4). It uses standard SDRAM control/address signals (RAS, CAS, WE, CS/CE), clock, bank address lines, and DQ0–DQ3 with data-mask (DQM) support.

Manufacturer

- Manufacturer: Integrated Silicon Solution, Inc. (ISSI)
- Type of company: A semiconductor memory company that designs and sells memory ICs (DRAM, SRAM, etc.) for electronics.

Application

IS42S32400E-6TL is a high-density DRAM suitable for external memory in various electronics. Typical application areas include: PC/notebook system memory and graphics buffers; embedded/industrial controllers and robotics; networking and telecom equipment (routers, switches, modems); consumer electronics (set-top boxes, TVs, digital cameras); automotive infotainment and instrumentation; medical devices requiring reliable, high-speed memory.

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