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IS42S16800F-6TLI

Name: IS42S16800F-6TLI
Rating: 4.7 (12 reviews)

IC DRAM 128MBIT PAR 54TSOP II

製造商
製造商。部分 #IS42S16800F-6TLI
包 54-TSOP (0.400, 10.16mm Width)
資料表 IS42S16800F-6TLI DataSheet
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規格

Supplier	ISSI, Integrated Silicon Solution Inc
Package	Tray
ProductStatus	Active
MemoryType	Volatile
MemoryFormat	DRAM
Technology	SDRAM
MemorySize	128Mb (8M x 16)
MemoryInterface	Parallel
ClockFrequency	166 MHz
AccessTime	5.4 ns
Voltage-Supply	3V ~ 3.6V
OperatingTemperature	-40°C ~ 85°C (TA)
MountingType	Surface Mount
Package/Case	54-TSOP (0.400, 10.16mm Width)

概述

Description

IS42S16800F-6TLI is a high‑density, asynchronous SRAM from ISSI. Quick intro:
- Capacity/organization: 16 Mb total, typically 2,097,152 × 8 (2M × 8) words.
- Speed grade: -6 (about 6 ns access time).
- Interface: asynchronous SRAM with separate address and data lines; 3-state DQ pins; control signals CS/CE, OE, WE.
- Package: TLI (a TSOP‑style leaded package) suitable for normal PCB mounting.
- Power/availability: CMOS memory; available in commercial/industrial grades; voltage and temperature specs per datasheet.
- Typical uses: memory buffering, graphics/frame buffers, caches, and other fast storage in microcontroller/ASIC/SoC systems.
- Note: For exact pinout, timing parameters (t_ACC, t_CE, t_OE, t_WE), power, and temperature ranges, consult the IS42S16800F-6TLI datasheet.
In short: a dense, fast 16‑Mb SRAM with a 6 ns speed grade in a TSOP‑like package, suitable for high‑speed buffering and caching in embedded designs.

Features

IS42S16800F-6TLI (typical features)
- Type/organization: 128-Mbit SDRAM, 16M x 8-bit data width (two banks)
- Speed grade: -6 (approx. 6 ns cycle time)
- Voltage: 3.3 V (I/O and core)
- Interface: Synchronous with clock; 8-bit data I/O; DQM control
- Burst: Burst length options (BL2/BL4/BL8) with auto-precharge
- Refresh: Auto refresh and self-refresh modes
- Packaging: TSOP-II / TLI family package
- Temperature: Commercial (0–70°C) and industrial (-40–85°C) variants
- Applications: Main memory for embedded systems and low-end/high-density boards
Note: Exact timings (tRCD, tRP, tMR, etc.) and burst parameters vary by grade; consult the datasheet for precise specs.

Package

TSOP II (Thin Small Outline Package II), Pb-free variant (-LI indicates lead-free).

Pinout

- Pin count: 54 pins (TSOP II package).
- Function: 16M x 8-bit dynamic RAM (DRAM) with multiplexed row/column addressing (RAS/CAS/WE, DQ0–DQ7). Speed grade -6ns.

Manufacturer

- Manufacturer: Integrated Silicon Solution, Inc. (ISSI)
- Company type: A fabless semiconductor company that designs and sells memory products (e.g., SRAM/DRAM) and outsources manufacturing to foundries.

Application

- Graphic/frame buffers and video memory
- Cache memory and high-speed buffers in embedded CPUs
- Data buffering in networking/telecom equipment
- DSP/multimedia systems needing fast random access SRAM
- Printers, automotive and industrial controllers requiring fast SRAM

Equivalent

To give exact equivalents, please confirm:
- Memory organization (e.g., 16K×8 or 1M×8/16)
- Supply voltage (5V or 3.3V)
- Package type (TSOP-II, SOIC, etc.)
- Speed grade (e.g., -6ns)
- Temperature range (Commercial, Industrial)
With these, I’ll provide precise cross-references from major SRAM vendors.