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IS42S16400F-7TLI

Name: IS42S16400F-7TLI
Rating: 4.7 (12 reviews)

IC DRAM 64MBIT PAR 54TSOP II

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製造商。部分 #IS42S16400F-7TLI
包 54-TSOP
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規格

Package	Tray
ProductStatus	Obsolete
MemoryType	Volatile
MemoryFormat	DRAM
Technology	SDRAM
MemorySize	64Mb (4M x 16)
MemoryInterface	Parallel
ClockFrequency	143 MHz
AccessTime	5.4 ns
Voltage-Supply	3V ~ 3.6V
OperatingTemperature	-40°C ~ 85°C (TA)
MountingType	Surface Mount
Package/Case	54-TSOP (0.400, 10.16mm Width)

概述

Description

The IS42S16400F-7TLI is a DRAM (Dynamic Random Access Memory) chip produced by ISSI (Integrated Silicon Solution, Inc.). It is a 16 Mbit (2 Megabyte) synchronous dynamic RAM organized as 2 Meg x 8 bits. This memory device operates at a voltage of 3.3V and is designed for high-speed data processing, making it suitable for applications such as telecommunications, consumer electronics, and computing systems.
Key features include a fast access time, typically around 7 nanoseconds, which allows for efficient data retrieval and processing. The chip supports various operating modes, including burst modes, which enhance its performance for sequential data access. The IS42S16400F-7TLI also adheres to JEDEC standards, ensuring compatibility with a wide range of devices.
Overall, this DRAM is valued for its reliability, speed, and efficiency in handling dynamic data in modern electronic systems.

Features

The IS42S16400F-7TLI is a 16M x 4-bit synchronous Dynamic Random-Access Memory (DRAM) designed for high-performance applications. Key features include:
1. Capacity: 64 Megabits (16M x 4 bits).
2. Speed: Operates at a clock frequency of up to 143 MHz with a data rate of 7.0 ns, enabling fast access times.
3. Interface: Supports Synchronous DRAM interface, allowing for efficient data transfers with clock synchronization.
4. Power Supply: Operates at a 3.3V power supply, making it suitable for low-power applications.
5. Burst Mode: Supports burst modes of operation, enhancing data transfer rates.
6. Refresh: Offers an automatic refresh function, ensuring data integrity.
7. Package Type: Typically available in a 54-ball FBGA package, optimizing space for compact designs.
These features make the IS42S16400F-7TLI suitable for various applications, including networking equipment, consumer electronics, and embedded systems.

Package

The IS42S16400F-7TLI is available in a 54-ball Thin Ball Grid Array (TBGA) package. This package type is designed for high-density applications and provides efficient thermal and electrical performance.

Pinout

The IS42S16400F-7TLI is a 16Mb (2M x 8) synchronous dynamic random-access memory (SDRAM) chip, featuring a total of 54 pins.
Pin Functions:
- Address Pins (A0-A10): These pins are used to select the address of the memory location.
- Data Pins (DQ0-DQ7): These pins are used for data input and output.
- Control Pins: Includes signals like CS (Chip Select), RAS (Row Address Strobe), CAS (Column Address Strobe), WE (Write Enable), and others for controlling the memory operation.
- Clock Pin (CLK): Synchronizes the operation of the memory.
- Bank Select (BA0, BA1): Used to select the memory bank.
- Power Pins (VDD, VSS): Provide the necessary power supply.
The IS42S16400F-7TLI operates at a data rate of 7.5 ns and is designed for high performance in applications like computer memory systems and other data processing equipment.

Manufacturer

The IS42S16400F-7TLI is manufactured by ISSI (Integrated Silicon Solution, Inc.), a company that specializes in the design and production of high-performance semiconductor memory solutions. Founded in 1988, ISSI focuses on various memory products, including SRAM, DRAM, and Flash memory. The company serves a range of markets, including consumer electronics, automotive, industrial, and telecommunications. ISSI is known for its commitment to innovation and quality in memory solutions, catering to the needs of diverse applications.

Application

The IS42S16400F-7TLI is a 16Mb asynchronous SRAM, commonly used in applications such as networking devices, telecommunications, consumer electronics, automotive systems, and industrial automation. Its high-speed access and low power consumption make it suitable for data buffering, caching, and temporary storage in systems requiring fast memory operations.

Equivalent

The IS42S16400F-7TLI is a 16Mb (2M x 8) synchronous DRAM. Equivalent products include:
1. MT48LC16M16A2P-75
2. Hynix HY57V641620
3. Samsung K4S641632G
4. Nanya NT5DS16M16GG-75
Always verify pin compatibility, timing specifications, and voltage levels before substitution.