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IS42S16320D-7BLI
IC DRAM 512MBIT PARALLEL 54TFBGA
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- 製造商。 部分 #IS42S16320D-7BLI
- 包 BGA-54
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規格
| Package | Tray |
| ProductStatus | Not For New Designs |
| MemoryType | Volatile |
| MemoryFormat | DRAM |
| Technology | SDRAM |
| MemorySize | 512Mb (32M x 16) |
| MemoryInterface | Parallel |
| ClockFrequency | 143 MHz |
| AccessTime | 5.4 ns |
| Voltage-Supply | 3V ~ 3.6V |
| OperatingTemperature | -40°C ~ 85°C (TA) |
| MountingType | Surface Mount |
| Package/Case | 54-TFBGA |
概述
Description
IS42S16320D-7BLI is a memory IC from ISSI (Intersil/ISSI) in the IS42S family. It’s a synchronous DRAM with a wide data bus (32 bits) intended for use with a memory controller in embedded/system designs. The -7 denotes the speed grade (roughly a 7 ns part). The device is a multi-bank DRAM that requires proper initialization and timing control via a memory controller, supports burst operations, and uses a standard DRAM command set (RAS/CAS/WE, CS_n, CE_n, DQ, etc.). The BLI suffix identifies the package/temperature grade. Typical supply is in the 3.3 V family (check the exact variant for voltage and timing). For precise electrical specs, timing, pinout, and initialization details, refer to the official ISSI IS42S16320D-7BLI datasheet.
Features
IS42S16320D-7BLI is a 512 Mbit synchronous DRAM with a 16M x 32 organization. Key features:
- Density/I/O: 512 Mb total; 32-bit wide data bus
- Speed grade: -7 (7 ns)
- Interface: Synchronous DRAM with LVTTL-compatible I/O
- Voltage: 3.3V supply (Vcc/Vccq)
- Banks and Burst: typically 2 banks; burst lengths 2/4/8 with sequential burst
- Timing: CAS latency options typical of this family (e.g., CL=2 or CL=3, depending on mode)
- Refresh: Auto refresh and self-refresh capabilities
- Packaging: BLI (Pb-free, RoHS-compliant) variant
Note: exact bank count, CAS latency options, and refresh specifics should be confirmed from the official datasheet for this lot/stepping.
- Density/I/O: 512 Mb total; 32-bit wide data bus
- Speed grade: -7 (7 ns)
- Interface: Synchronous DRAM with LVTTL-compatible I/O
- Voltage: 3.3V supply (Vcc/Vccq)
- Banks and Burst: typically 2 banks; burst lengths 2/4/8 with sequential burst
- Timing: CAS latency options typical of this family (e.g., CL=2 or CL=3, depending on mode)
- Refresh: Auto refresh and self-refresh capabilities
- Packaging: BLI (Pb-free, RoHS-compliant) variant
Note: exact bank count, CAS latency options, and refresh specifics should be confirmed from the official datasheet for this lot/stepping.
Package
Leadless Ball Grid Array (BGA) package.
Pinout
Pin count: 48 pins.
Function: High-speed synchronous SRAM with a 16M x 32-bit organization (32-bit data bus), i.e., a 512 Mbit memory in a synchronous burst SRAM configuration used as system/cache memory.
Function: High-speed synchronous SRAM with a 16M x 32-bit organization (32-bit data bus), i.e., a 512 Mbit memory in a synchronous burst SRAM configuration used as system/cache memory.
Manufacturer
Manufacturer: Integrated Silicon Solution, Inc. (ISSI).
About the company: ISSI is a semiconductor company that designs and markets memory ICs (DRAM, SRAM) and related memory solutions; it is a fabless memory supplier that relies on third-party foundries for fabrication.
About the company: ISSI is a semiconductor company that designs and markets memory ICs (DRAM, SRAM) and related memory solutions; it is a fabless memory supplier that relies on third-party foundries for fabrication.
Application
Applications:
- Main/system memory and graphics/framebuffer memory in PCs and embedded systems
- High-bandwidth buffers in networking/telecom equipment
- Digital consumer electronics (set-top boxes, DVD players, TVs, game consoles)
- Industrial/instrumentation controllers requiring fast DRAM
- Main/system memory and graphics/framebuffer memory in PCs and embedded systems
- High-bandwidth buffers in networking/telecom equipment
- Digital consumer electronics (set-top boxes, DVD players, TVs, game consoles)
- Industrial/instrumentation controllers requiring fast DRAM
Equivalent
Equivalents depend on voltage and package. IS42S16320D-7BLI is a 16M × 32-bit SDRAM with -7ns timing (BLI packaging). For exact cross-references from other vendors (Micron, Hynix, Samsung, Nanya, Renesas), please specify the package (e.g., TSOP-54) and supply voltage (e.g., 2.5V, 3.3V). With those, I can provide drop-in equivalent part numbers.
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