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IRS21864STRPBF
IC GATE DRVR HI/LOW SIDE 14SOIC
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規格
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| ProductStatus | Active |
| DrivenConfiguration | High-Side or Low-Side |
| ChannelType | Independent |
| NumberofDrivers | 2 |
| GateType | IGBT, N-Channel MOSFET |
| Voltage-Supply | 10V ~ 20V |
| LogicVoltage-VILVIH | 0.8V, 2.5V |
| Current-PeakOutput(SourceSink) | 4A, 4A |
| InputType | Non-Inverting |
| HighSideVoltage-Max(Bootstrap) | 600 V |
| Rise/FallTime(Typ) | 22ns, 18ns |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 14-SOIC (0.154, 3.90mm Width) |
概述
Description
The IRS21864STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver with independent high- and low-side referenced output channels. Manufactured by Infineon Technologies, this driver is designed to drive N-channel power MOSFETs or IGBTs in a half-bridge configuration, commonly used in motor drives, power supplies, and other industrial applications.
Key features of the IRS21864STRPBF include a voltage range of up to 600V, a gate drive supply range from 10V to 20V, and a robust built-in dead-time management system to prevent shoot-through. It also provides under-voltage lockout protection for both high-side and low-side drivers, ensuring safe operation under varying supply conditions. The driver is packaged in a thermally efficient and compact surface-mount TSSOP package.
Its fast switching capabilities and high noise immunity make it suitable for high-speed, high-efficiency power electronics applications. The device's versatility and reliability make it a popular choice for designers seeking effective and efficient management of high-voltage power systems.
Key features of the IRS21864STRPBF include a voltage range of up to 600V, a gate drive supply range from 10V to 20V, and a robust built-in dead-time management system to prevent shoot-through. It also provides under-voltage lockout protection for both high-side and low-side drivers, ensuring safe operation under varying supply conditions. The driver is packaged in a thermally efficient and compact surface-mount TSSOP package.
Its fast switching capabilities and high noise immunity make it suitable for high-speed, high-efficiency power electronics applications. The device's versatility and reliability make it a popular choice for designers seeking effective and efficient management of high-voltage power systems.
Features
The IRS21864STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver designed to drive two N-channel power devices in a half-bridge configuration. Key features include:
1. High Voltage Capability: Can handle up to 600V, suitable for high-voltage applications.
2. Bootstrap Functionality: Integrated bootstrap diode simplifies the design and improves reliability.
3. Under-Voltage Lockout (UVLO): Provides protection by disabling the output when supply voltage is below a specified threshold.
4. Dead-Time Protection: Configurable dead-time to prevent shoot-through, enhancing durability.
5. Low Propagation Delay: Typically around 120ns, allowing for high-speed switching.
6. Floating Channel: Capable of operating up to 600V, supporting configurations that require high-side and low-side switching.
7. CMOS Schmitt-trigger Inputs: Provides noise immunity and ensures robust performance.
8. Cross-conduction Prevention Logic: Ensures reliable switching by preventing simultaneous conduction of high-side and low-side switches.
9. RoHS Compliant: Environmentally friendly and aligns with global regulations.
These features make the IRS21864STRPBF suitable for applications in motor drives, power supplies, and inverter designs.
1. High Voltage Capability: Can handle up to 600V, suitable for high-voltage applications.
2. Bootstrap Functionality: Integrated bootstrap diode simplifies the design and improves reliability.
3. Under-Voltage Lockout (UVLO): Provides protection by disabling the output when supply voltage is below a specified threshold.
4. Dead-Time Protection: Configurable dead-time to prevent shoot-through, enhancing durability.
5. Low Propagation Delay: Typically around 120ns, allowing for high-speed switching.
6. Floating Channel: Capable of operating up to 600V, supporting configurations that require high-side and low-side switching.
7. CMOS Schmitt-trigger Inputs: Provides noise immunity and ensures robust performance.
8. Cross-conduction Prevention Logic: Ensures reliable switching by preventing simultaneous conduction of high-side and low-side switches.
9. RoHS Compliant: Environmentally friendly and aligns with global regulations.
These features make the IRS21864STRPBF suitable for applications in motor drives, power supplies, and inverter designs.
Package
The IRS21864STRPBF is typically housed in a surface-mount SOIC-14 package. This package type is designed for efficient heat dissipation and compact integration into circuit boards, making it suitable for high-density electronic applications.
Pinout
The IRS21864STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver with independent high- and low-side referenced output channels. It is typically used in motor control and power conversion applications. The device comes in an 8-pin SOIC package.
Key functions and pin configuration are as follows:
1. VCC (Pin 1): Supply voltage for the logic circuit.
2. HIN (Pin 2): Logic input for high-side gate driver.
3. LIN (Pin 3): Logic input for low-side gate driver.
4. COM (Pin 4): Logic ground.
5. LO (Pin 5): Low-side gate drive output.
6. VS (Pin 6): High-voltage floating supply return.
7. HO (Pin 7): High-side gate drive output.
8. VB (Pin 8): High-side floating supply voltage.
The IRS21864STRPBF features under-voltage lockout protection for both channels and delivers a typical output current of 2.3A. It is suitable for driving power MOSFETs and IGBTs in half-bridge configurations.
Key functions and pin configuration are as follows:
1. VCC (Pin 1): Supply voltage for the logic circuit.
2. HIN (Pin 2): Logic input for high-side gate driver.
3. LIN (Pin 3): Logic input for low-side gate driver.
4. COM (Pin 4): Logic ground.
5. LO (Pin 5): Low-side gate drive output.
6. VS (Pin 6): High-voltage floating supply return.
7. HO (Pin 7): High-side gate drive output.
8. VB (Pin 8): High-side floating supply voltage.
The IRS21864STRPBF features under-voltage lockout protection for both channels and delivers a typical output current of 2.3A. It is suitable for driving power MOSFETs and IGBTs in half-bridge configurations.
Manufacturer
The IRS21864STRPBF is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that specializes in a wide range of electronic components, including microcontrollers, power semiconductors, sensors, and security ICs. The company focuses on providing solutions for automotive, industrial, and consumer electronics markets, among others. Infineon's products are designed to improve energy efficiency, mobility, and security in various applications.
Application
The IRS21864STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Its application areas include motor control, inverters, power supply units, DC-DC converters, and industrial drives. It is particularly suited for applications requiring fast switching and robust performance in environments where high voltages are present.
Equivalent
The IRS21864STRPBF is a high-side and low-side gate driver IC. Equivalent products include the FAN73832 from ON Semiconductor, UCC27714 from Texas Instruments, and the MCP14A0601 from Microchip Technology. These alternatives may differ slightly in features, so it's crucial to verify compatibility with your specific application requirements.
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