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IRS2153DSTRPBF
IC GATE DRVR HALF-BRIDGE 8SOIC
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規格
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| DrivenConfiguration | Half-Bridge |
| ChannelType | Synchronous |
| NumberofDrivers | 2 |
| GateType | N-Channel MOSFET |
| Voltage-Supply | 10V ~ 15.4V |
| Current-PeakOutput(SourceSink) | 180mA, 260mA |
| InputType | RC Input Circuit |
| HighSideVoltage-Max(Bootstrap) | 600 V |
| Rise/FallTime(Typ) | 120ns, 50ns |
| OperatingTemperature | -40°C ~ 125°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
概述
Description
The IRS2153DSTRPBF is a high-voltage, high-speed power MOSFET and IGBT driver with a floating channel specifically designed for bootstrap operation. It is manufactured by Infineon Technologies and is commonly used in motor drive applications and power supplies. This integrated circuit can drive high-side and low-side switches in a half-bridge configuration and is capable of operating at voltages up to 600V.
Key features include a gate drive supply range from 10V to 20V, a typical turn-on and turn-off propagation delay of 120 ns, and matched propagation delay for both high and low-side drivers. It also offers under-voltage lockout protection to prevent malfunction during low-voltage conditions. The IRS2153DSTRPBF is housed in an 8-pin SOIC package, which is beneficial for compact designs.
Overall, this driver IC is favored for its robustness and reliability in demanding applications requiring efficient high-voltage and high-speed switching. Its design simplifies the implementation of half-bridge configurations, aiding in the development of effective power conversion systems.
Key features include a gate drive supply range from 10V to 20V, a typical turn-on and turn-off propagation delay of 120 ns, and matched propagation delay for both high and low-side drivers. It also offers under-voltage lockout protection to prevent malfunction during low-voltage conditions. The IRS2153DSTRPBF is housed in an 8-pin SOIC package, which is beneficial for compact designs.
Overall, this driver IC is favored for its robustness and reliability in demanding applications requiring efficient high-voltage and high-speed switching. Its design simplifies the implementation of half-bridge configurations, aiding in the development of effective power conversion systems.
Features
The IRS2153DSTRPBF is a high-voltage, high-speed power MOSFET and IGBT driver. It is designed to drive power MOSFETs and IGBTs in half-bridge configurations. Notable features include:
1. High Voltage Tolerance: With a floating channel designed for bootstrapping operation, it can handle voltages up to 600V.
2. Gate Drive Supply Range: It supports a wide gate drive supply voltage range, typically from 10V to 20V.
3. Logic Inputs: The driver typically includes standard logic-compatible inputs, making it easy to interface with microcontrollers or other digital circuits.
4. Bootstrap Diode: An integrated bootstrap diode simplifies the design and reduces component count.
5. Under-Voltage Lockout (UVLO): This feature protects the device from operating at insufficient gate drive voltage, which can prevent the MOSFET or IGBT from fully turning on.
6. Dead-Time Control: It has an adjustable dead-time setting to prevent shoot-through by ensuring a non-overlapping switching interval between high-side and low-side switches.
7. Package: Available in surface-mount and through-hole options, facilitating use in various applications.
These features make the IRS2153DSTRPBF suitable for medium to high-power applications, such as motor drives, lighting ballasts, and power supplies.
1. High Voltage Tolerance: With a floating channel designed for bootstrapping operation, it can handle voltages up to 600V.
2. Gate Drive Supply Range: It supports a wide gate drive supply voltage range, typically from 10V to 20V.
3. Logic Inputs: The driver typically includes standard logic-compatible inputs, making it easy to interface with microcontrollers or other digital circuits.
4. Bootstrap Diode: An integrated bootstrap diode simplifies the design and reduces component count.
5. Under-Voltage Lockout (UVLO): This feature protects the device from operating at insufficient gate drive voltage, which can prevent the MOSFET or IGBT from fully turning on.
6. Dead-Time Control: It has an adjustable dead-time setting to prevent shoot-through by ensuring a non-overlapping switching interval between high-side and low-side switches.
7. Package: Available in surface-mount and through-hole options, facilitating use in various applications.
These features make the IRS2153DSTRPBF suitable for medium to high-power applications, such as motor drives, lighting ballasts, and power supplies.
Package
The IRS2153DSTRPBF is typically available in an SOIC-8 package type. This surface-mount package is designed for ease of integration into electronic circuits, offering a compact and efficient form factor for power management applications.
Pinout
The IRS2153DSTRPBF is an integrated circuit from Infineon Technologies, primarily used as a high-voltage, high-speed half-bridge driver. It is designed for driving power MOSFETs and IGBTs in various applications.
The device typically comes in an 8-pin SOIC package. The pin functions are as follows:
1. VCC: Supply voltage input.
2. VB: High-side floating supply.
3. HO: High-side gate drive output.
4. VS: High-side floating supply return.
5. COM: Low-side return.
6. LO: Low-side gate drive output.
7. CT: Timing capacitor.
8. RT: Timing resistor.
These pins allow the IRS2153DSTRPBF to generate the required gate drive signals and timing necessary for efficient operation of half-bridge configurations in power electronics.
The device typically comes in an 8-pin SOIC package. The pin functions are as follows:
1. VCC: Supply voltage input.
2. VB: High-side floating supply.
3. HO: High-side gate drive output.
4. VS: High-side floating supply return.
5. COM: Low-side return.
6. LO: Low-side gate drive output.
7. CT: Timing capacitor.
8. RT: Timing resistor.
These pins allow the IRS2153DSTRPBF to generate the required gate drive signals and timing necessary for efficient operation of half-bridge configurations in power electronics.
Manufacturer
The IRS2153DSTRPBF is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that designs, develops, and produces a wide range of semiconductor solutions, including microcontrollers, sensors, and power management ICs. The company is known for its innovations in automotive, industrial, and security applications. Infineon's products are essential in various sectors, ranging from automotive electronics to renewable energy systems, contributing to the efficient and reliable operation of electronic systems.
Application
The IRS2153DSTRPBF is a high-voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is commonly used in motor drives, power supplies, lighting ballasts, and induction heating. Its capabilities make it suitable for applications requiring efficient power conversion and control, like driving half-bridge and full-bridge configurations.
Equivalent
The IRS2153DSTRPBF is a self-oscillating half-bridge driver IC. Equivalent or similar products include the IR2153 and IR21531 from Infineon Technologies, as well as other half-bridge driver ICs with comparable specifications from manufacturers like Texas Instruments, ON Semiconductor, and STMicroelectronics. When selecting an equivalent, ensure that the voltage rating, current capability, and frequency range meet your application's requirements.
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