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IRLML5203
MOSFET P-CH 30V 3A MICRO3/SOT23
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- 製造商。 部分 #IRLML5203
- 包 SOT-23
- 資料表 IRLML5203 DataSheet
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規格
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Obsolete |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 3A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 98mOhm @ 3A, 10V |
| Vgs(th)(Max)@Id | 2.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 14 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 510 pF @ 25 V |
| PowerDissipation(Max) | 1.25W (Ta) |
| MountingType | Surface Mount |
| SupplierDevicePackage | Micro3™/SOT-23 |
概述
Description
IRLML5203 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in various electronic circuits for switching and amplification applications. It features a low on-resistance, making it suitable for power management in devices such as converters and amplifiers. With a maximum drain-source voltage of 60V and a continuous drain current rating of around 5.5A, it can handle moderate power levels efficiently.
The device operates with enhanced speed and control, making it ideal for applications like LED drivers, motor controllers, and power supply circuits. Its compact form factor and robust performance make it a popular choice in consumer electronics, automotive applications, and industrial controls.
Understanding the characteristics such as threshold voltage, gate charge, and thermal resistance is crucial for effective integration into circuits.
The device operates with enhanced speed and control, making it ideal for applications like LED drivers, motor controllers, and power supply circuits. Its compact form factor and robust performance make it a popular choice in consumer electronics, automotive applications, and industrial controls.
Understanding the characteristics such as threshold voltage, gate charge, and thermal resistance is crucial for effective integration into circuits.
Features
The IRLML5203 is a N-channel MOSFET designed for low-voltage applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for various low-voltage applications.
2. Current Rating: The continuous drain current (I_D) is rated at 4.2A, allowing it to handle significant loads.
3. R_DS(on): The on-state resistance is low, typically around 0.045 ohms at a V_GS of 10V, ensuring efficient operation and reduced heat generation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 1V to 2V, facilitating the use of logic-level signals for switching.
5. Package Type: It is available in a compact surface-mount package (SOT-23), suitable for space-constrained designs.
6. Fast Switching Speed: The MOSFET supports fast switching speeds, making it ideal for applications like switching regulators, DC-DC converters, and load switching.
Overall, the IRLML5203 is a versatile component for efficient power management in various electronic devices.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for various low-voltage applications.
2. Current Rating: The continuous drain current (I_D) is rated at 4.2A, allowing it to handle significant loads.
3. R_DS(on): The on-state resistance is low, typically around 0.045 ohms at a V_GS of 10V, ensuring efficient operation and reduced heat generation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 1V to 2V, facilitating the use of logic-level signals for switching.
5. Package Type: It is available in a compact surface-mount package (SOT-23), suitable for space-constrained designs.
6. Fast Switching Speed: The MOSFET supports fast switching speeds, making it ideal for applications like switching regulators, DC-DC converters, and load switching.
Overall, the IRLML5203 is a versatile component for efficient power management in various electronic devices.
Package
The IRLML5203 is available in a SOT-23 package type. This compact surface-mount package is designed for efficient thermal performance and space-saving in electronic circuits.
Manufacturer
The IRLML5203 is manufactured by Infineon Technologies, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in providing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. The company serves various industries, such as automotive, industrial, and consumer electronics, focusing on energy efficiency and connectivity. Infineon is known for its innovations in power management and has a strong presence in the market for MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors), like the IRLML5203, which is commonly used in low-voltage applications and efficient power delivery systems.
Application
The IRLML5203 is an N-channel MOSFET widely used in power management applications, including DC-DC converters, load switching, motor control, and battery management systems. Its low gate threshold voltage and fast switching speeds make it suitable for high-efficiency power supplies and portable electronic devices. It is also utilized in automotive applications for driving loads and in various consumer electronics for power regulation and control.
Equivalent
Equivalent products to the IRLML5203 include the BSS138, BSS84, and 2N7000 MOSFETs, which offer similar electrical characteristics. Additionally, the AO3400 and AO3401 can serve as alternatives, depending on the specific application requirements. Always verify specifications like voltage, current ratings, and package types to ensure compatibility.
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