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IRLML0030TRPBF
MOSFET N-CH 30V 5.3A SOT23
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- 包 SOT23
- 資料表 IRLML0030TRPBF DataSheet
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規格
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 5.3A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 27mOhm @ 5.2A, 10V |
| Vgs(th)(Max)@Id | 2.3V @ 25µA |
| GateCharge(Qg)(Max)@Vgs | 2.6 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 382 pF @ 15 V |
| PowerDissipation(Max) | 1.3W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | Micro3™/SOT-23 |
概述
Description
The IRLML0030TRPBF is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for low-voltage applications. It is commonly used in power management, motor control, and switching applications due to its low on-resistance and fast switching capabilities. The "IR" indicates the manufacturer, International Rectifier, while "L" designates it as a logic-level MOSFET, meaning it can be driven directly by low-voltage logic circuits.
Key specifications include a maximum drain-source voltage (Vds) of 30V, a continuous drain current (Id) rating of around 60A, and a low Rds(on) value, which enhances efficiency by minimizing power losses during operation. The package type is typically a surface-mount device (SMD), making it suitable for compact circuit designs. The IRLML0030TRPBF is used in various applications, including battery management systems and LED drivers, due to its reliability and performance in controlling larger currents and voltages efficiently.
Key specifications include a maximum drain-source voltage (Vds) of 30V, a continuous drain current (Id) rating of around 60A, and a low Rds(on) value, which enhances efficiency by minimizing power losses during operation. The package type is typically a surface-mount device (SMD), making it suitable for compact circuit designs. The IRLML0030TRPBF is used in various applications, including battery management systems and LED drivers, due to its reliability and performance in controlling larger currents and voltages efficiently.
Features
The IRLML0030TRPBF is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for low-voltage applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage power switching applications.
2. Current Rating: It can handle continuous drain current (I_D) of up to 6.5A, depending on the thermal conditions.
3. R_DS(on): The on-resistance is low, typically around 0.045 ohms at a gate-source voltage (V_GS) of 10V, which enhances efficiency and reduces power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically between 1V and 2V, allowing for logic-level drive compatibility.
5. Package: It is available in a compact SOT-23 package, making it suitable for space-constrained applications.
6. Fast Switching: The device features fast switching times, ideal for high-frequency applications.
These features make the IRLML0030TRPBF ideal for use in power management, motor control, and low-voltage switching applications.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage power switching applications.
2. Current Rating: It can handle continuous drain current (I_D) of up to 6.5A, depending on the thermal conditions.
3. R_DS(on): The on-resistance is low, typically around 0.045 ohms at a gate-source voltage (V_GS) of 10V, which enhances efficiency and reduces power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically between 1V and 2V, allowing for logic-level drive compatibility.
5. Package: It is available in a compact SOT-23 package, making it suitable for space-constrained applications.
6. Fast Switching: The device features fast switching times, ideal for high-frequency applications.
These features make the IRLML0030TRPBF ideal for use in power management, motor control, and low-voltage switching applications.
Package
The IRLML0030TRPBF is packaged in a SOT-23 (Surface-Mount) format.
Pinout
The IRLML0030TRPBF is a N-channel MOSFET that comes in a small SOT-23 package, which has a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin controls the MOSFET; applying a voltage here turns the device on.
2. Drain (D): This is the terminal where the current flows out of the MOSFET when it is turned on.
3. Source (S): This terminal connects to the ground or the lower potential side of the circuit.
The IRLML0030 is designed for applications requiring low on-resistance and fast switching speeds, making it suitable for power management and switching applications.
1. Gate (G): This pin controls the MOSFET; applying a voltage here turns the device on.
2. Drain (D): This is the terminal where the current flows out of the MOSFET when it is turned on.
3. Source (S): This terminal connects to the ground or the lower potential side of the circuit.
The IRLML0030 is designed for applications requiring low on-resistance and fast switching speeds, making it suitable for power management and switching applications.
Manufacturer
The manufacturer of the IRLML0030TRPBF is Infineon Technologies AG. Infineon is a semiconductor manufacturer based in Germany, focusing on a wide range of applications including automotive, industrial, and consumer electronics. The company specializes in power semiconductors, sensor solutions, and microcontrollers, and is recognized for its innovations in energy efficiency and mobility solutions. Infineon serves various markets, enabling advancements in smart technologies and sustainable energy.
Application
The IRLML0030TRPBF is a N-channel MOSFET primarily used in applications such as power management, DC-DC converters, load switches, and motor control. Its low on-resistance and fast switching capabilities make it suitable for battery-powered devices, portable electronics, and automotive applications. Additionally, it can be utilized in high-efficiency power supplies and renewable energy systems.
Equivalent
Equivalent products to the IRLML0030TRPBF include the BSS138, SI2302, and 2N7000. These MOSFETs share similar specifications such as voltage and current ratings, but always verify the specific parameters (like Vgs, Rds(on), and package type) to ensure compatibility in your application.
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