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IRLHS6276TRPBF
MOSFET 2N-CH 20V 4.5A PQFN
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- 製造商。 部分 #IRLHS6276TRPBF
- 包 6-VQFN
- 資料表 IRLHS6276TRPBF DataSheet
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規格
| Supplier | Infineon Technologies,Rochester Electronics, LLC |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 20V |
| Current-ContinuousDrain(Id)@25°C | 4.5A |
| RdsOn(Max)@IdVgs | 45mOhm @ 3.4A, 4.5V |
| Vgs(th)(Max)@Id | 1.1V @ 10µA |
| GateCharge(Qg)(Max)@Vgs | 3.1nC @ 4.5V |
| InputCapacitance(Ciss)(Max)@Vds | 310pF @ 10V |
| Power-Max | 1.5W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 6-VQFN |
概述
Description
IRLHS6276TRPBF appears to be a code or designation that doesn't have a widely recognized meaning in public sources as of my last knowledge update in October 2023. It may refer to a specific product, model, or project within a particular industry or organization. For accurate information, it would be best to consult specific documentation or resources related to the context in which this code is used. If you provide more context or clarify the field (e.g., technology, healthcare, etc.), I may be able to help further.
Features
The IRLHS6276TRPBF is a N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: It can handle continuous drain current (I_D) up to 62A.
3. R_DS(on): Low on-resistance of approximately 0.0085 ohms at 10V gate voltage, ensuring efficient performance and reduced power loss.
4. Gate Threshold Voltage (V_GS(th)): Typically between 1V and 2.5V, allowing for easy drive with logic-level signals.
5. Package: Available in a TO-220 package, which provides effective thermal management.
6. Fast Switching: Suitable for applications requiring rapid switching, such as power supplies and motor control.
7. Thermal Resistance: Offers low thermal resistance, enhancing heat dissipation.
These characteristics make the IRLHS6276TRPBF suitable for a variety of electronic applications, including power management and automotive systems.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: It can handle continuous drain current (I_D) up to 62A.
3. R_DS(on): Low on-resistance of approximately 0.0085 ohms at 10V gate voltage, ensuring efficient performance and reduced power loss.
4. Gate Threshold Voltage (V_GS(th)): Typically between 1V and 2.5V, allowing for easy drive with logic-level signals.
5. Package: Available in a TO-220 package, which provides effective thermal management.
6. Fast Switching: Suitable for applications requiring rapid switching, such as power supplies and motor control.
7. Thermal Resistance: Offers low thermal resistance, enhancing heat dissipation.
These characteristics make the IRLHS6276TRPBF suitable for a variety of electronic applications, including power management and automotive systems.
Package
The IRLHS6276TRPBF is packaged in a standard SOIC-8 (Small Outline Integrated Circuit) form factor. This package type is designed for surface mounting and typically features eight pins.
Pinout
The IRLHS6276TRPBF is a dual N-channel MOSFET with a pin count of 8. It is designed for high-speed switching applications and features low on-resistance, making it suitable for power management in various electronic devices.
Pin Functions:
1. Pin 1 (G1): Gate of the first N-channel MOSFET.
2. Pin 2 (D1): Drain of the first N-channel MOSFET.
3. Pin 3 (S1): Source of the first N-channel MOSFET.
4. Pin 4 (S2): Source of the second N-channel MOSFET.
5. Pin 5 (D2): Drain of the second N-channel MOSFET.
6. Pin 6 (G2): Gate of the second N-channel MOSFET.
7. Pin 7 (N/C): Not connected.
8. Pin 8 (N/C): Not connected.
The device is typically used in applications like DC-DC converters, motor control, and load switching.
Pin Functions:
1. Pin 1 (G1): Gate of the first N-channel MOSFET.
2. Pin 2 (D1): Drain of the first N-channel MOSFET.
3. Pin 3 (S1): Source of the first N-channel MOSFET.
4. Pin 4 (S2): Source of the second N-channel MOSFET.
5. Pin 5 (D2): Drain of the second N-channel MOSFET.
6. Pin 6 (G2): Gate of the second N-channel MOSFET.
7. Pin 7 (N/C): Not connected.
8. Pin 8 (N/C): Not connected.
The device is typically used in applications like DC-DC converters, motor control, and load switching.
Manufacturer
The IRLHS6276TRPBF is manufactured by Infineon Technologies. Infineon is a global semiconductor manufacturer based in Germany, specializing in semiconductor and system solutions for automotive, industrial, and multimarket applications. The company focuses on areas such as power management, sensor technologies, and security solutions. Infineon is known for its innovative products that enhance energy efficiency, connectivity, and safety in various electronic applications.
Application
The IRLHS6276TRPBF is a high-performance, low-side N-channel MOSFET primarily used in power management applications, such as DC-DC converters, motor control, and load switching. Its features make it suitable for use in consumer electronics, automotive systems, and industrial automation, where efficient power handling and thermal performance are critical.
Equivalent
The IRLHS6276TRPBF is a dual N-channel MOSFET. Equivalent products include the Vishay SiHFP6N60, Infineon BSC009N06LS, and Fairchild FDB7030. Always check the specific datasheet for exact specifications, such as voltage rating, current rating, and package type, to ensure compatibility.
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