IRGS4062DPBF

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IRGS4062DPBF

IGBT TRENCH 600V 48A D2PAK

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規格

Part Status Obsolete
IGBT Type Trench
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 48 A
Current - Collector Pulsed (Icm) 96 A
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 24A
Power - Max 250 W
Switching Energy 115µJ (on), 600µJ (off)
Input Type Standard
Gate Charge 50 nC
Td (on/off) @ 25°C 41ns/104ns
Test Condition 400V, 24A, 10Ohm, 15V
Reverse Recovery Time (trr) 89 ns
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Base Product Number IRGS4062DPBF

概述

Description

IRGS4062DPBF is a course likely focused on topics within international relations, global studies, or political science, emphasizing applied research methods. It may cover theoretical frameworks, case studies, and practical applications in global governance, conflict resolution, and international development. The course likely aims to equip students with analytical skills and critical thinking necessary for understanding complex global issues. Students may engage in research projects, discussions, and presentations to enhance their understanding of the dynamic international landscape. Overall, it prepares participants for careers in diplomacy, international organizations, or academia.

Features

The IRGS4062DPBF is a part of the International Rectifier's IRG series of insulated gate bipolar transistors (IGBTs). Key features include:
1. Voltage Rating: It typically supports a maximum collector-emitter voltage (Vce) of 600V.
2. Current Rating: The device can handle continuous collector current (Ic) up to 40A at a specified operating temperature.
3. Switching Speed: Designed for efficient switching applications, it offers fast switching capabilities, making it well-suited for high-frequency applications.
4. Low On-State Voltage: It features a low on-state voltage drop, which enhances efficiency and reduces power loss during operation.
5. Thermal Performance: The device incorporates a robust thermal management design, allowing it to operate effectively in high-temperature environments.
6. Package Type: It is available in a TO-247 package, facilitating easy integration into various circuit designs.
Overall, the IRGS4062DPBF is ideal for applications such as motor drives, power inverters, and other power conversion systems.

Package

The IRGS4062DPBF is packaged in a DPAK (TO-252) format. This package type is surface-mount and designed for power applications, providing efficient thermal performance and compact dimensions.

Manufacturer

The manufacturer of the IRGS4062DPBF is Infineon Technologies. Infineon is a global semiconductor company that specializes in designing and manufacturing a wide range of semiconductor solutions, including power semiconductors, sensors, and microcontrollers. The company serves various industries such as automotive, industrial, and consumer electronics, focusing on providing innovative products that enhance energy efficiency, connectivity, and security. Infineon is known for its expertise in power management and has a strong emphasis on research and development to advance technology in the semiconductor field.

Application

The IRGS4062DPBF is an insulated gate bipolar transistor (IGBT) primarily used in applications such as motor drives, power inverters, renewable energy systems (like solar inverters), and industrial equipment. Its high switching speed and efficient performance make it suitable for power conversion and control in various electronic systems, including uninterruptible power supplies (UPS) and induction heating.

Equivalent

The IRGS4062DPBF is an N-channel MOSFET. Equivalent products include the IRF3205, IRF540, and STP75NF75. When substituting, ensure to verify key specifications such as voltage rating, current handling, and RDS(on) to match the application requirements. Always consult the manufacturer's datasheets for detailed comparisons.

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