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IRGP4068DPBF

Name: IRGP4068DPBF
Rating: 4.7 (12 reviews)

IGBT TRENCH 600V 96A TO247AC

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製造商。部分 #IRGP4068DPBF
包 TO-247-3
資料表 IRGP4068DPBF DataSheet
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規格

Supplier	Rochester Electronics, LLC,Infineon Technologies
Package	Bulk,Tube
ProductStatus	Obsolete
IGBTType	Trench
Voltage-CollectorEmitterBreakdown(Max)	600 V
Current-Collector(Ic)(Max)	96 A
Current-CollectorPulsed(Icm)	144 A
Vce(on)(Max)@VgeIc	2.14V @ 15V, 48A
Power-Max	330 W
SwitchingEnergy	1.28mJ (off)
InputType	Standard
GateCharge	95 nC
Td(on/off)@25°C	-/145ns
TestCondition	400V, 48A, 10Ohm, 15V
OperatingTemperature	-55°C ~ 175°C (TJ)
MountingType	Through Hole
Package/Case	TO-247-3

概述

Description

IRGP4068DPBF is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It features a low on-resistance and high-speed switching capabilities, making it suitable for use in power management circuits, such as DC-DC converters, power supplies, and motor drivers.
This particular MOSFET is built on advanced silicon technology, ensuring high performance and reliability. It typically operates at high voltages and can handle significant current levels, making it ideal for demanding applications. The "DPBF" designation indicates that the device is part of a specific product family with enhanced thermal performance and is offered in a compact package for space-saving designs.
Overall, IRGP4068DPBF is a key component for engineers looking to optimize power efficiency and performance in electronic designs.

Features

The IRGP4068DPBF is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, allowing it to handle higher voltages in power management applications.
2. Current Rating: It supports a continuous drain current (I_D) of up to 68A, making it suitable for high-current applications.
3. On-Resistance: It offers a low on-resistance (R_DS(on)) value of around 0.025 ohms at 10V, which helps reduce power losses during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) typically ranges from 2V to 4V, ensuring efficient switching.
5. Package Type: It comes in a TO-220 package, facilitating heat dissipation and easy integration into circuits.
6. Fast Switching: The device supports fast switching speeds, ideal for switching power supplies and motor control applications.
Overall, the IRGP4068DPBF is a robust and efficient choice for various electronic applications requiring high efficiency and reliability.

Package

The IRGP4068DPBF is packaged in a TO-220 form factor, which is a type of standard package used for power devices, allowing for efficient heat dissipation and easy mounting on heatsinks.

Pinout

The IRGP4068DPBF is an N-channel IGBT (Insulated Gate Bipolar Transistor) with a pin count of 4. The pins are typically designated as follows:
1. Gate (G): Controls the switching of the IGBT.
2. Collector (C): The terminal through which the main current flows when the device is turned on.
3. Emitter (E): The terminal that connects to the ground or negative side of the power supply.
4. Source (S): Often connected to the Emitter for IGBTs, serves as the return path.
The IRGP4068DPBF is designed for applications requiring high voltage and current handling, making it suitable for power electronics, motor drives, and inverter circuits. It features low on-state voltage drop and fast switching speeds, contributing to efficient performance in various power applications.

Manufacturer

The IRGP4068DPBF is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in the development and production of a wide range of semiconductor products, including power semiconductors, microcontrollers, sensors, and automotive electronics. The company focuses on various sectors such as automotive, industrial, and security applications, providing innovative solutions to enhance energy efficiency and connectivity. Infineon is known for its commitment to technological advancement and sustainability in the semiconductor industry.

Application

The IRGP4068DPBF is an Insulated Gate Bipolar Transistor (IGBT) commonly used in applications such as motor drives, power inverters, and high-efficiency power supplies. It is suitable for industrial equipment, renewable energy systems (like solar inverters), and electric vehicles due to its high voltage and current handling capabilities, combined with low switching losses.

Equivalent

The IRGP4068DPBF is an IGBT (Insulated Gate Bipolar Transistor) with a voltage rating of 600V and a current rating of 40A. Equivalent products include the IXGH40N60C3, FGA40N60, and MG150Q2YS40. Always verify specifications and suitability for your specific application before substituting components.