IRGP20B60PDPBF

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IRGP20B60PDPBF

IGBT 600V 40A 220W TO247AC

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規格

Supplier Infineon Technologies
Package Tube
ProductStatus Obsolete
IGBTType NPT
Voltage-CollectorEmitterBreakdown(Max) 600 V
Current-Collector(Ic)(Max) 40 A
Current-CollectorPulsed(Icm) 80 A
Vce(on)(Max)@VgeIc 2.8V @ 15V, 20A
Power-Max 220 W
SwitchingEnergy 95µJ (on), 100µJ (off)
InputType Standard
GateCharge 68 nC
Td(on/off)@25°C 20ns/115ns
TestCondition 390V, 13A, 10Ohm, 15V
ReverseRecoveryTime(trr) 42 ns
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
Package/Case TO-247-3

概述

Description

The IRGP20B60PDPBF is an insulated gate bipolar transistor (IGBT) designed for high-voltage applications. It features a maximum collector-emitter voltage (Vce) of 600V and a continuous collector current (Ic) rating of 20A, making it suitable for power conversion and motor control applications. This IGBT combines high efficiency with fast switching capabilities, which contribute to reduced energy losses and improved thermal management.
The device is housed in a TO-247 package, allowing for effective heat dissipation. Its low saturation voltage enhances performance in high-power applications. The IRGP20B60PDPBF is ideal for use in inverter circuits, power supplies, and industrial motor drives. It is particularly valued in applications requiring robust performance and reliability.
Overall, the IRGP20B60PDPBF represents a reliable choice for engineers looking to achieve efficient power management in various electronic systems.

Features

The IRGP20B60PDPBF is a high-performance insulated gate bipolar transistor (IGBT) designed for power applications. Key features include:
1. Voltage Rating: 600V, suitable for medium voltage applications.
2. Current Rating: 20A continuous collector current, allowing for substantial power handling.
3. Low Saturation Voltage: Typically around 1.7V at rated current, enhancing efficiency.
4. Fast Switching Speed: Designed for high-frequency applications, reducing switching losses.
5. Low Gate Drive Power: Requires minimal power for operation, simplifying driver circuit design.
6. Robust Construction: Features a thermally stable design, ensuring reliability under varying thermal conditions.
7. TO-220 Package: Facilitates easy heat dissipation and mounting flexibility in electronic circuits.
These attributes make the IRGP20B60PDPBF suitable for applications in power inverters, motor drives, and other industrial control systems.

Package

The IRGP20B60PDPBF is typically packaged in a TO-220 form factor. This package type is designed for power semiconductor devices, offering good thermal performance and ease of mounting to heatsinks.

Manufacturer

The IRGP20B60PDPBF is manufactured by Infineon Technologies AG, a leading global semiconductor company. Infineon specializes in designing and producing a wide range of semiconductor solutions, including power management, automotive, industrial, and security applications. The company is known for its innovative technologies in power semiconductors, such as IGBTs (Insulated Gate Bipolar Transistors) and MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors), which are utilized in various sectors including renewable energy, electric vehicles, and consumer electronics. Infineon is headquartered in Neubiberg, Germany, and operates globally, contributing significantly to advancements in energy efficiency and smart technologies.

Application

The IRGP20B60PDPBF is a high-voltage, high-speed IGBT (Insulated Gate Bipolar Transistor) commonly used in industrial applications such as motor drives, inverters, power supplies, and renewable energy systems like solar inverters. Its ability to handle high power and voltage makes it suitable for applications requiring efficient switching and low conduction losses.

Equivalent

The IRGP20B60PDPBF is a 600V, 20A IGBT. Equivalent products include:
1. FGA20N60 - Fairchild Semiconductor
2. MIG20N60 - ON Semiconductor
3. STGW20H60 - STMicroelectronics
4. IXGH20N60 - IXYS
Always verify specifications and application suitability before replacing components.

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