IRG4PH50UDPBF

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IRG4PH50UDPBF

IGBT 1200V 45A 200W TO247AC

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規格

Package Tube
ProductStatus Obsolete
Voltage-CollectorEmitterBreakdown(Max) 1200 V
Current-Collector(Ic)(Max) 45 A
Current-CollectorPulsed(Icm) 180 A
Vce(on)(Max)@VgeIc 3.7V @ 15V, 24A
Power-Max 200 W
SwitchingEnergy 2.1mJ (on), 1.5mJ (off)
InputType Standard
GateCharge 160 nC
Td(on/off)@25°C 47ns/110ns
TestCondition 800V, 24A, 5Ohm, 15V
ReverseRecoveryTime(trr) 90 ns
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
Package/Case TO-247-3

概述

Description

IRG4PH50UDPBF appears to refer to a specific product or designation, but it is not widely recognized in public databases or general knowledge. It may represent a model number, a component in technology, or a proprietary item from a specific manufacturer.
To understand it better, you would typically look for the context in which it is used, such as electronics, networking equipment, or industrial applications. This could involve checking manufacturer specifications, product documentation, or industry standards that may relate to IRG4PH50UDPBF.
If you have a specific context or industry where this term is used, please provide that information for a more detailed response.

Features

The IRG4PH50UDPBF is a high-performance N-channel MOSFET designed for power switching applications. Key features include:
1. Voltage Rating: Supports a drain-source voltage (Vds) of up to 500V, making it suitable for high voltage applications.
2. Current Rating: Capable of handling continuous drain current (Id) up to 50A, facilitating efficient power management.
3. Low On-Resistance: Offers a low Rds(on) value, which minimizes conduction losses and improves efficiency.
4. Fast Switching Speeds: Designed for rapid switching, which is essential for high-frequency applications.
5. Thermal Performance: Features a robust thermal resistance, allowing for effective heat dissipation.
6. Package Type: Typically available in a TO-220 package, ensuring easy mounting and heat management.
7. Applications: Ideal for use in power supplies, motor drives, and other applications requiring efficient power conversion.
Overall, the IRG4PH50UDPBF is well-suited for demanding power electronic applications, providing reliability and performance.

Package

The IRG4PH50UDPBF is packaged in a TO-247 form factor, which is a robust, insulated package commonly used for high-power applications.

Manufacturer

The IRG4PH50UDPBF is manufactured by Infineon Technologies AG, a global semiconductor company headquartered in Germany. Infineon specializes in providing a wide range of semiconductor and system solutions, particularly in the areas of automotive, industrial power control, and security technologies. The company focuses on innovative products that enhance energy efficiency, mobility, and security in various applications. Infineon's portfolio includes power semiconductors, microcontrollers, and sensor technologies. They are known for their commitment to quality and sustainability in the semiconductor industry.

Application

The IRG4PH50UDPBF is a high-voltage, high-speed IGBT (Insulated Gate Bipolar Transistor) primarily used in applications such as motor drives, renewable energy systems (like solar inverters), industrial power supplies, and UPS (uninterruptible power supplies). Its capability to handle high power levels makes it suitable for energy-efficient switching in various power electronics applications.

Equivalent

The IRG4PH50UDPBF chip is a high-voltage IGBT (Insulated Gate Bipolar Transistor). Equivalent products include the Infineon IGBT series, specifically the IGBT module IGBT4H50T, and the ON Semiconductor FGA50N60. Always check datasheets for precise specifications and compatibility for your application.

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